Abstract: Discussed is a battery that may include at least one battery module including at least one battery cell, a case tray configured to support the at least one battery module, a case cover coupled with the case tray to cover the at least one battery module, a sealing gasket disposed between the case tray and the case cover to prevent penetration of moisture or foreign substance into the at least one battery module, and a reinforcing unit provided to the case cover to be disposed adjacent to the sealing gasket and configured to prevent twisting of the case cover when the case tray and the case cover are coupled.

Abstract: Discussed is a battery pack that may include at least one battery module including at least one battery cell; a case tray configured to support the at least one battery module; a tray cover coupled to the case tray; and at least one bushing gasket configured to connect the case tray and the tray cover and to support the case tray on a plurality of points.

Abstract: An orthodontic wire bending device includes a providing part, a bending unit and a cutting part. The providing part is configured to provide a wire. The bending unit is disposed at a front side of the providing part, and includes a fixing part and a bending part. The fixing part is configured to fix the wire. The bending part is configured to bend the wire fixed by the fixing part. The cutting part is configured to cut the wire bent by the bending part. The bending part includes a bending module, and the bending module is rotated along a circumferential direction or moves along a direction to make contact with at least one side of the wire for bending the wire.

Abstract: A laterally double-diffused metal oxide semiconductor (LDMOS) and a method for fabrication thereof includes a well region formed in a semiconductor substrate having an active region defined by device isolation layers, a body region formed over the well region, a drain region spaced from the body region at a constant interval and formed above the well region, a source region and a source contact region formed in the body region in structural communication with the source region, a drift region having a trench formed therein formed in the well region between the body region and the drain region, and a gate formed over the semiconductor substrate which partially overlaps the source region and the drift region.

Abstract: An image sensor and a method for manufacturing the same that includes readout circuitry, an electrical junction region, an interconnection, an image sensing device, and an infrared filter. The readout circuitry and the electrical junction region are formed in a first substrate and are electrically connected to each other. The interconnection is formed over the electrical junction region and the image sensing device is formed over the interconnection. The infrared filter is formed on the image sensing device and includes a plurality of thin films.