Abstract: An embodiment antioxidant liquid for a fuel cell is provided. The antioxidant liquid is to be charged in a gas diffusion layer of a fuel cell stack, and the antioxidant liquid includes a solvent, an oxide as a first antioxidant dispersed in the solvent, and a salt as a second antioxidant dissolved in the solvent.

Abstract: Provided is a control device connected to a display panel including a controller configured to display images by driving the display panel according to data corresponding to image frames, and a memory connected to the controller. The controller is configured to select at least one of the image frames as a reference image frame, and update stress data corresponding to a partial area of the display panel in the memory based on one image data block selected from image data blocks of the reference image frame.

Abstract: A method for manufacturing a gas diffusion layer for a fuel cell wherein carbon nanotubes are impregnated into Korean paper, thereby enhancing electroconductivity, and a gas diffusion layer manufactured thereby. The method for manufacturing a gas diffusion layer for a fuel cell which is to manufacture a gas diffusion layer as a constituent member of a unit cell in a fuel cell, includes a support preparation step of preparing a support with Korean paper; a dispersion preparation step of dispersing a carbon substance in a solvent to form a dispersion, a coating step of coating the support with the dispersion, and a thermal treatment step of thermally treating the dispersion-coated support to fix the carbon substance to the support.

Abstract: A structure and the fabrication method of two-color IR detector are disclosed. Disclosed two-color IR detector structure is a n-p-N structure which can be realized using only two-layer HgCdTe. The most important factor in the two-color IR detector structure is the formation of the potential barrier in the conduction band of p-N heterojunction. This potential barrier prevents photogenerated minority carriers in p-HgCdTe region from diffusing to and being collected by N-HgCdTe region (larger band gap diode). The calculated potential barrier heights under the thermal equilibrium at 77 K are 21 kT (141 meV) and 13.4 kT (89 meV) for the cases of p-Hg.sub.0.78 Cd.sub.0.22 Te/N-Hg.sub.0.69 Cd.sub.0.3l Te and p-Hg.sub.0.69 Cd.sub.0.31 Te/N-Hg.sub.0.636 Cd.sub.0.364 Te with each side carrier concentration of 5.times.10.sup.15 and 1.times.10.sub.16 cm.sup.-3, respectively.