Abstract: This technology provides an electronic device and a method for fabricating the same. An electronic device in accordance with an implementation of this document includes semiconductor memory, and the semiconductor memory includes a Magnetic Tunnel Junction (MTJ) structure including a free layer having a variable magnetization direction, a pinned layer having a pinned magnetization direction, and a tunnel barrier layer interposed between the pinned layer and the free layer; a magnetic correction layer located under the MTJ structure and operates to reduce an influence of a stray magnetic field generated by the pinned layer; and an under layer located under the magnetic correction layer and including a metal oxide layer.

Abstract: An electronic device is provided to include a semiconductor memory including a variable resistance element. The variable resistance element may include a variable resistance pattern including a first electrode layer, a variable resistance layer, and a second electrode layer that are sequentially stacked; and a switching assist structure spaced from a side wall of the variable resistance pattern to surround the variable resistance pattern and including multilayered conductive structures that are vertically spaced from one another.

Abstract: An electronic device includes a semiconductor memory, wherein the semiconductor memory includes: a seed layer including conductive hafnium silicate; a first magnetic layer formed over the seed layer; a tunnel barrier layer formed over the first magnetic layer; and a second magnetic layer formed over the tunnel barrier layer.