Abstract: An electronic device is provided. The electronic device includes a housing including a front surface and a rear surface, a display, a communication circuit, at least one processor, and a memory. The memory stores instructions which, when executed, cause the at least one processor to receive a signal from outside of the electronic device using the communication circuit, in response to receiving the signal, display a user interface on an elongated region that extends along at least one edge region of the display, and display at least one content corresponding to the signal, while displaying the user interface or after displaying the user interface.

Abstract: An electronic device is provided. The electronic device includes a housing including a front surface and a rear surface, a display, a communication circuit, at least one processor, and a memory. The memory stores instructions which, when executed, cause the at least one processor to receive a signal from outside of the electronic device using the communication circuit, in response to receiving the signal, display a user interface on an elongated region that extends along at least one edge region of the display, and display at least one content corresponding to the signal, while displaying the user interface or after displaying the user interface.

Abstract: A method of forming a hard mask layer on a substrate includes forming an amorphous carbon layer using nitrous oxide (N2O). A source of carbon and the nitrous oxide (N2O) are introduced to the substrate under a plasma ambient of an inert gas. The amorphous carbon layer has a nitrogen content ranging from about 0.05 at % to about 30 at % and an oxygen content ranging from about 0.05 at % to about 10 at %. In forming a semiconductor device, the hard mask layer is patterned, and a target layer beneath the hard mask layer is etched using the patterned hard mask layer as an etch mask.

Abstract: A method of forming a hard mask layer on a substrate includes forming an amorphous carbon layer using nitrous oxide (N2O). A source of carbon and the nitrous oxide (N2O) are introduced to the substrate under a plasma ambient of an inert gas. The amorphous carbon layer has a nitrogen content ranging from about 0.05 at % to about 30 at % and an oxygen content ranging from about 0.05 at % to about 10 at %. In forming a semiconductor device, the hard mask layer is patterned, and a target layer beneath the hard mask layer is etched using the patterned hard mask layer as an etch mask.

Abstract: A showerhead includes a body configured to receive a reaction gas, a nozzle on the body configured to inject the reaction gas to a substrate, and a plurality of conducting members in thermal contact with the body to conduct heat generated from the substrate.

Abstract: A method for forming metal wirings, which includes the steps of forming over an insulating film a conduction pattern corresponding to metal wirings, which will be subsequently formed, plasma-treating the surface of the resulting structure, forming an oxide film, which contains Si atoms with a refraction index of 1.47 or above in an excessive amount, using SiH.sub.4 --N.sub.2 O mixed gas, and forming an O.sub.3 -TEOS film over the oxide film. In accordance with this method, it is possible to prevent a formation of voids in the insulating layer and a degradation in the quality of the insulating layer while achieving a superior reproducibility, an improved yield and an improved reliability.

Abstract: A method for forming field oxide films in a semiconductor device, characterized by treating a trench mask and a trench oxide to make their surfaces positively charged so that an ozone-TEOS USG film might be deposited at a rapid rate on the trench oxide but at slow rate on the trench mask, whereby production yield can be significantly improved.