Patents by Inventor Seung-nam Cha

Seung-nam Cha has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11929032
    Abstract: A display device comprises a display panel which comprises scan lines, sensing lines, pixels electrically connected to each of the scan lines, and photo sensors electrically to each of the scan lines and the sensing lines, a scan driver which outputs scan signals to the scan lines according to a scan control signal, a timing controller which outputs the scan control signal to the scan driver, and a readout circuit which receives light sensing signals of the photo sensors from the sensing lines. The timing controller sets a frame frequency of the scan control signal to a first frame frequency in a first mode in which the display panel displays an image. The timing controller sets the frame frequency of the scan control signal to a second frame frequency in a second mode in which the photo sensors sense a fingerprint.
    Type: Grant
    Filed: August 15, 2022
    Date of Patent: March 12, 2024
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Hyun Dae Lee, Il Nam Kim, Seung Hyun Moon, Dong Wook Yang, Kang Bin Jo, Go Eun Cha
  • Patent number: 10333054
    Abstract: A nanogenerator with at least one nanostructure and method of manufacturing the same are provided. The method of manufacturing the nanogenerator includes forming at least one nanostructure including an organic piezoelectric material on a substrate.
    Type: Grant
    Filed: February 4, 2016
    Date of Patent: June 25, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jung-inn Sohn, Seung-nam Cha, Sung-min Kim, Sang-woo Kim, Ju-seok Seo
  • Patent number: 9748095
    Abstract: A method of controlling a growth crystallographic plane of a metal oxide semiconductor having a wurtzite crystal structure by using a thermal chemical vapor deposition method includes controlling a growth crystallographic plane by allowing the metal oxide semiconductor to grow in a non-polar direction by using a source material including a thermal decomposition material that reduces a surface energy of a polar plane of the metal oxide semiconductor.
    Type: Grant
    Filed: February 24, 2016
    Date of Patent: August 29, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Young-jun Park, Jung-inn Sohn, Seung-nam Cha, Ji-yeon Ku
  • Patent number: 9488759
    Abstract: A varifocal lens including a first liquid crystal layer; a first electrode portion disposed below the first liquid crystal layer and having a flat shape; a first non-uniform electric field generator which generates a non-uniform electric field in the first liquid crystal layer together with the first electrode portion, and the first non-uniform electric field generator including a second electrode portion having a flat shape.
    Type: Grant
    Filed: March 1, 2016
    Date of Patent: November 8, 2016
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Byoung-lyong Choi, Eun-kyung Lee, Seung-nam Cha, Sun-il Kim
  • Publication number: 20160178811
    Abstract: A varifocal lens including a first liquid crystal layer; a first electrode portion disposed below the first liquid crystal layer and having a flat shape; a first non-uniform electric field generator which generates a non-uniform electric field in the first liquid crystal layer together with the first electrode portion, and the first non-uniform electric field generator including a second electrode portion having a flat shape.
    Type: Application
    Filed: March 1, 2016
    Publication date: June 23, 2016
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Byoung-lyong CHOI, Eun-kyung LEE, Seung-nam CHA, Sun-il KIM
  • Publication number: 20160172193
    Abstract: A method of controlling a growth crystallographic plane of a metal oxide semiconductor having a wurtzite crystal structure by using a thermal chemical vapor deposition method includes controlling a growth crystallographic plane by allowing the metal oxide semiconductor to grow in a non-polar direction by using a source material including a thermal decomposition material that reduces a surface energy of a polar plane of the metal oxide semiconductor.
    Type: Application
    Filed: February 24, 2016
    Publication date: June 16, 2016
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Young-jun PARK, Jung-inn SOHN, Seung-nam CHA, Ji-yeon KU
  • Publication number: 20160155930
    Abstract: A nanogenerator with at least one nanostructure and method of manufacturing the same are provided. The method of manufacturing the nanogenerator includes forming at least one nanostructure including an organic piezoelectric material on a substrate.
    Type: Application
    Filed: February 4, 2016
    Publication date: June 2, 2016
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jung-inn SOHN, Seung-nam CHA, Sung-min KIM, Sang-woo KIM, Ju-seok SEO
  • Patent number: 9309405
    Abstract: Example embodiments are directed to a nanofiber-nanowire composite includes a polymer nanofiber; and a plurality of nanowires of a metal oxide extending from inside to outside of the polymer nanofiber and covering the polymer nanofiber. According to example embodiments, a method of fabricating a nanofiber-nanowire composite includes forming a nanofiber including a metal seed; and growing nanowires of a metal oxide from the metal seed to the outside of the nanofiber.
    Type: Grant
    Filed: June 30, 2010
    Date of Patent: April 12, 2016
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jong-jin Park, Seung-nam Cha, Jae-hyun Hur
  • Patent number: 9312468
    Abstract: A nano-piezoelectric generator includes a first electrode and a second electrode, at least one nano-piezoelectric unit, formed of a semiconductor piezoelectric material having a nano-structure, disposed between the first and the second electrodes, and an interlayer, formed of an insulating material, disposed between the first electrode and the at least one nano-piezoelectric unit.
    Type: Grant
    Filed: February 22, 2013
    Date of Patent: April 12, 2016
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jung-inn Sohn, Seung-nam Cha
  • Patent number: 9305778
    Abstract: A method of controlling a growth crystallographic plane of a metal oxide semiconductor having a wurtzite crystal structure by using a thermal chemical vapor deposition method includes controlling a growth crystallographic plane by allowing the metal oxide semiconductor to grow in a non-polar direction by using a source material including a thermal decomposition material that reduces a surface energy of a polar plane of the metal oxide semiconductor.
    Type: Grant
    Filed: April 9, 2013
    Date of Patent: April 5, 2016
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Young-jun Park, Jung-inn Sohn, Seung-nam Cha, Ji-yeon Ku
  • Patent number: 9270207
    Abstract: A nanogenerator with at least one nanostructure and method of manufacturing the same are provided. The method of manufacturing the nanogenerator includes forming at least one nanostructure including an organic piezoelectric material on a substrate.
    Type: Grant
    Filed: March 5, 2012
    Date of Patent: February 23, 2016
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jung-inn Sohn, Seung-nam Cha, Sung-min Kim, Sang-woo Kim, Ju-seok Seo
  • Patent number: 9214343
    Abstract: A ZnSnO3/ZnO nanowire, a method of forming a ZnSnO3/ZnO nanowire, a nanogenerator including a ZnSnO3/ZnO nanowire, a method of forming a ZnSnO3 nanowire, and a nanogenerator including a ZnSnO3 nanowire are provided. The ZnSnO3/ZnO nanowire includes a core and a shell that surrounds the core, wherein the core includes ZnSnO3 and the shell includes ZnO.
    Type: Grant
    Filed: June 5, 2012
    Date of Patent: December 15, 2015
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jung-inn Sohn, Seung-Nam Cha, Sung-min Kim, Sang-woo Kim
  • Patent number: 9190605
    Abstract: A nanopiezoelectric generator is provided. The nanopiezoelectric generator includes a first electrode; a second electrode; at least one nanostructure that is interposed between the first electrode and the second electrode, and includes a piezoelectric material and first carriers; and a concentration adjusting unit that adjusts a concentration of the first carriers in the at least one nanostructure.
    Type: Grant
    Filed: July 30, 2012
    Date of Patent: November 17, 2015
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Seung-nam Cha, Sung-min Kim, Jung-inn Sohn
  • Patent number: 9172022
    Abstract: A composite structure of graphene and polymer and a method of manufacturing the complex. The composite structure of graphene and polymer includes: at least one polymer structure having a three-dimensional shape; and a graphene layer formed on the at least one polymer structure.
    Type: Grant
    Filed: November 29, 2012
    Date of Patent: October 27, 2015
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Eun-kyung Lee, Byoung-lyong Choi, Seung-nam Cha, Jae-hyun Lee, Dong-mok Whang
  • Patent number: 9134568
    Abstract: A varifocal lens including a first liquid crystal layer; a second liquid crystal layer disposed below the first liquid crystal layer; a common electrode disposed between the first liquid crystal layer and the second liquid crystal layer; a first electrode disposed above the first liquid crystal layer and having a curved shape; and a second electrode disposed below the second liquid crystal layer and having a curved shape.
    Type: Grant
    Filed: December 19, 2012
    Date of Patent: September 15, 2015
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Byoung-lyong Choi, Eun-kyung Lee, Seung-nam Cha, Seung-wan Lee, Sun-il Kim
  • Patent number: 8975805
    Abstract: According to an example embodiment, an electrical energy generator includes at least one piezoelectric structure, a semiconductor layer and a contact layer. The at least one piezoelectric structure includes a material having piezoelectric characteristics. One surface of each piezoelectric structure forms a p-n junction with the semiconductor layer. The other end of each piezoelectric structure contacts the contact layer that is formed of a material having metal-insulator transition (MIT) characteristics. The piezoelectric structure may be an elongated member, such as a nanowire.
    Type: Grant
    Filed: February 14, 2012
    Date of Patent: March 10, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sung-min Kim, Seung-nam Cha
  • Patent number: 8926915
    Abstract: A smell-diffusing cell array substrate, an apparatus configured to transfer smell information and an electronic device are provided, the smell-diffusing cell array substrate includes at least one smell-diffusing cell having a microcapsule with a core-shell structure. A shell of the microcapsule includes a wall material and a photocatalyst dispersed in the wall material. A core of the microcapsule includes a smell-diffusion material and a hydrophilic liquid.
    Type: Grant
    Filed: June 30, 2010
    Date of Patent: January 6, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jong-jin Park, Seung-nam Cha, Jae-hyun Hur, Jong-min Kim
  • Patent number: 8917377
    Abstract: An active lens includes: a first nanoelectrode unit; a second nanoelectrode unit formed to face the first nanoelectrode unit; and a liquid crystal layer disposed between the first nanoelectrode unit and the second nanoelectrode unit. Liquid crystal molecules of the liquid crystal layer are aligned according to an electric field formed by a voltage applied to the first and second nanoelectrode units to form a refractive power.
    Type: Grant
    Filed: August 18, 2010
    Date of Patent: December 23, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Seung-nam Cha, Sun-il Kim, Yong-kweun Mun, Jae-eun Jang
  • Patent number: 8885238
    Abstract: A light position controlling apparatus and a method of manufacturing the same. The light position controlling apparatus includes a substrate; first and second electrodes that are arranged on the substrate and configured to generate an electric field; and a piezoelectric nano wire configured to operate as optical waveguide. The piezoelectric nano wire includes a first portion disposed on the substrate, and a second portion that extends from the first portion and bends according to the electric field generated by the first and second electrodes to change a travel direction of light transmitted by the piezoelectric nano wire.
    Type: Grant
    Filed: July 6, 2012
    Date of Patent: November 11, 2014
    Assignees: Samsung Electronics Co., Ltd., Georgia Tech Research Corporation
    Inventors: Seung-nam Cha, Young-jun Park, Zhong Lin Wang, Min-baek Lee
  • Patent number: 8840985
    Abstract: Disclosed herein is a composition for forming an inorganic pattern, comprising an inorganic precursor, at least one stabilizer selected from ?-diketone and ?-ketoester, and a solvent. Use of the composition enables efficient and inexpensive formation of an inorganic micropattern.
    Type: Grant
    Filed: August 28, 2008
    Date of Patent: September 23, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Seung Nam Cha, Dae Joon Kang, Byong Gwon Song