Abstract: A semiconductor wafer cleaning composition for used in a semiconductor device manufacturing process and a method of cleaning a semiconductor wafer using the cleaning composition are provided. The cleaning composition includes surfactants represented by Formula 1 and Formula 2, respectively, an organic or inorganic acid, and water occupying for the remaining proportion. The cleaning method is a method of immersing a semiconductor wafer in the cleaning composition for 100 to 500 seconds. The cleaning composition and the cleaning method according to the present disclosure provide an incredibility improved removal rate and an effective cleaning power for contaminants, especially organic wax, during a process of polishing the surface of a wafer used to manufacture semiconductor devices, thereby providing a super-cleaned wafer surface, resulting in production of reliable semiconductor devices.

Abstract: Proposed is an etching composition capable of adjusting an etching selectivity of a tungsten film with respect to a tungsten film. An etching method using the same etching composition is also proposed. The etching composition includes an inorganic acid, an oxidizing agent, an additive represented by Formula 1, and the remaining proportion of water. The etching composition exhibits remarkable effects of providing a high etching rate for a titanium nitride film and of adjusting the etching selectivity of a titanium nitride film with respect to a tungsten film to be in a range of 1 to 15.

Abstract: The present invention relates to an etching composition for selectively etching a silicon nitride layer. The etching composition includes an inorganic acid, an epoxy-based silicon compound, and water. The etching composition of the present invention selectively removes a silicon nitride layer while minimizing damage to an underlying metal layer and preventing a silicon oxide layer from being etched.

Abstract: The present disclosure relates to a semiconductor wafer cleaning composition for used in a semiconductor device manufacturing process and to a method of cleaning a semiconductor wafer using the cleaning composition. The cleaning composition includes surfactants represented by Formula 1 and Formula 2, respectively, an organic or inorganic acid, and water occupying for the remaining proportion. The cleaning method is a method of immersing a semiconductor wafer in the cleaning composition for 100 to 500 seconds. The cleaning composition and the cleaning method according to the present disclosure provide an incredibility improved removal rate and an effective cleaning power for contaminants, especially organic wax, during a process of polishing the surface of a wafer used to manufacture semiconductor devices, thereby providing a super-cleaned wafer surface, resulting in production of reliable semiconductor devices.

Abstract: The present invention relates to an etching composition for selectively etching a silicon nitride layer. The etching composition includes an inorganic acid, an epoxy-based silicon compound, and water. The etching composition of the present invention selectively removes a silicon nitride layer while minimizing damage to an underlying metal layer and preventing a silicon oxide layer from being etched.

Abstract: The present invention relates to a three-dimensional surface image generating method and system using a multi-energy X-ray image and an optical image, and more particularly, to a three-dimensional surface image generating method and system using a multi-energy X-ray image and an optical image which reconstruct an X-ray tomographic image with an improved contrast of soft tissue including skin of an object using two or more multi-energy X-ray transmission data, calculate a three-dimensional surface model for the object, and combine optical image information including color information of the object to generate a three-dimensional surface image for the object.

Abstract: The present invention relates to a three-dimensional surface image generating method and system using a multi-energy X-ray image and an optical image, and more particularly, to a three-dimensional surface image generating method and system using a multi-energy X-ray image and an optical image which reconstruct an X-ray tomographic image with an improved contrast of soft tissue including skin of an object using two or more multi-energy X-ray transmission data, calculate a three-dimensional surface model for the object, and combine optical image information including color information of the object to generate a three-dimensional surface image for the object.

Abstract: Disclosed herein are a tomosynthesis system for digital X-ray imaging and a method of controlling the tomosynthesis system. The tomosynthesis system includes an X-ray source, a detector, and a terminal. The X-ray source continuously moves during a scan period, and maintains a uniform X-ray focus in each capture section in which capture is performed by adjusting the direction of an emitted electron beam. The detector detects an image of X-rays having passed through an area of interest of an object in the capture section. The terminal controls the adjustment of the direction of the electron beam, creates a three-dimensional (3D) X-ray image by synthesizing detected X-ray images, and then displays the 3D X-ray image.

Abstract: Disclosed herein are a tomosynthesis system for digital X-ray imaging and a method of controlling the tomosynthesis system. The tomosynthesis system includes an X-ray source, a detector, and a terminal. The X-ray source continuously moves during a scan period, and maintains a uniform X-ray focus in each capture section in which capture is performed by adjusting the direction of an emitted electron beam. The detector detects an image of X-rays having passed through an area of interest of an object in the capture section. The terminal controls the adjustment of the direction of the electron beam, creates a three-dimensional (3D) X-ray image by synthesizing detected X-ray images, and then displays the 3D X-ray image.