Abstract: Systems, circuits and methods for software programmable logic using Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) technology are disclosed. Magnetic tunnel junction (MTJ) storage elements can be formed into input planes and output planes. The input planes and output planes can be coupled together to form complex arrays that allow for the realization of logic functions.

Abstract: Provided are a thimble-type intermediation device and a method for recognizing a finger gesture using the same. The thimble-type intermediation device includes: a motion sensing unit sensing a motion of a user's finger and generating the sensed result as motion data; a tactile sensing block sensing a tactile behavior of the user's finger and generating the sensed result as tactile data; a control unit recognizing the gesture and tactile behavior of the user's finger on the basis of the generated motion data and tactile data, and outputting the recognition result as recognition result information; and a wireless communication unit transmitting the recognition result information to a robot system.

Abstract: Disclosed is a typewriter system and a text input method capable of accurately recognizing words by correcting words input using a mediated interface device based on a dictionary. A plurality of texts are combined by referencing a text recognition order set in which recognition results of texts are arranged according to a recognition order from texts input through the mediated interface device and the combined text is filtered using part index maps formed of part words that are an accumulated set of texts forming complete words. The part words passing through the part index maps is again filtered using a dictionary including context information formed of a set of words in a specific category, thereby making it possible to accurately recognize the words. The part words that cannot form words in a dictionary are removed in advance using the part index maps, thereby improving the recognition efficiency.

Abstract: A system and method to manufacture magnetic random access memory is disclosed. In a particular embodiment, a method of making a magnetic tunnel junction memory system includes forming a portion of a metal layer into a source line having a substantially rectilinear portion. The method also includes coupling the source line, at the substantially rectilinear portion, to a first transistor using a first via. The first transistor is configured to supply a first current received from the source line to a first magnetic tunnel junction device. The method includes coupling the source line to a second transistor using a second via, where the second transistor is configured to supply a second current received from the source line to a second magnetic tunnel junction device.

Abstract: An apparatus for controlling a robot and a method thereof are provided. The apparatus includes: a state interpretation unit determining whether or not a current situation belongs to a preset unstable state by evaluating the current situation based on a plurality of perception information items; and a target generation unit setting a target action of the robot by comparing the current situation and the determination result with a predetermined value system, and then, modifying the target action by receiving a feedback of the action performance result of the robot as perception information. According to the method and apparatus, by inputting a processing procedure and a value system to solve a variety of unstable states that can occur in situations of a user and circumstances surrounding the robot, the robot can actively respond with actions.

Abstract: Example embodiments relate to methods of fabricating a semiconductor device having a metal-semiconductor compound region. A method according to example embodiments may include forming semiconductor pillars on a semiconductor substrate. The semiconductor substrate between the semiconductor pillars may be etched to form a trench region. A dielectric isolation pattern partially filling the trench region may be formed, and dielectric sidewall spacers may be formed on sidewalls of the semiconductor pillars. Metal-semiconductor compound regions may be formed on sidewalls of a portion of the trench region that is not filled by the isolation pattern.

Abstract: A method of fabricating a semiconductor device including a fin field effect transistor (Fin-FET) includes forming sacrificial bars on a semiconductor substrate, patterning the sacrificial bars to form sacrificial islands on the semiconductor substrate, forming a device isolation layer to fill a space between the sacrificial islands, selectively removing the sacrificial islands to expose the semiconductor substrate below the sacrificial islands, and anisotropically etching the exposed semiconductor substrate using the device isolation layer as an etch mask to form a recessed channel region. The recessed channel region allows the channel width and channel length of a transistor to be increased, thereby reducing the occurrence of short channel effects and narrow channel effects in highly integrated semiconductor devices.

Abstract: Systems, circuits and methods for software programmable logic using Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) technology are disclosed. Magnetic tunnel junction (MTJ) storage elements can be formed into input planes and output planes. The input planes and output planes can be coupled together to form complex arrays that allow for the realization of logic functions.

Abstract: A stacked semiconductor device and a method for fabricating the stacked semiconductor device are disclosed. The stacked semiconductor device includes a first insulating interlayer having an opening that partially exposes a substrate, wherein the substrate includes single crystalline silicon, and a first seed pattern that fills the opening, wherein the first seed pattern has an upper portion disposed over the opening, and the upper portion is tapered away from the substrate. The stacked semiconductor device further includes a second insulating interlayer formed on the first insulating interlayer, wherein a trench that exposes the upper portion of the first seed pattern penetrates the second insulating interlayer, and a first single crystalline silicon structure that fills the trench.

Abstract: A stacked semiconductor device and a method for fabricating the stacked semiconductor device are disclosed. The stacked semiconductor device includes a first insulating interlayer having an opening that partially exposes a substrate, wherein the substrate includes single crystalline silicon, and a first seed pattern that fills the opening, wherein the first seed pattern has an upper portion disposed over the opening, and the upper portion is tapered away from the substrate. The stacked semiconductor device further includes a second insulating interlayer formed on the first insulating interlayer, wherein a trench that exposes the upper portion of the first seed pattern penetrates the second insulating interlayer, and a first single crystalline silicon structure that fills the trench.

Abstract: In a semiconductor device and method of manufacturing the semiconductor device, a punch-through prevention film pattern and a channel film pattern are formed on an insulation layer. The punch-through prevention pattern and the insulation layer may include nitride and oxide, respectively. The punch-through prevention pattern is located under the channel pattern.

Abstract: A system for recognizing a touch action that a person has performed upon an object, is provided with a sensor component for detecting a sensor value corresponding to the touch action through an inertial sensor attached to part of a body of the person; and a signal processing component for recognizing the touch action from the sensor value detected by the sensor component and transferring the recognized touch action to the object. Further, a method for recognizing a touch action that a person has performed upon an object, is provided with: detecting a sensor value corresponding to the touch action through an inertial sensor attached to part of a body of the person; and recognizing the touch action from the detected sensor value and transferring the recognized touch action to the object.

Abstract: Provided is a method of fabricating a semiconductor device having a contact hole with a high aspect-ratio. The method includes: sequentially forming a lower pattern and an upper layer on a semiconductor substrate; sequentially forming a lower mask layer and an upper mask layer on the upper layer; sequentially patterning the lower and upper mask layers to form a hole exposing a top surface of the upper layer on the lower pattern; using the upper mask layer as an etching mask to anisotropically etch the exposed top surface to form an upper contact hole exposing a top surface of the lower pattern; and using the lower mask layer as an etching mask to anisotropically etch the exposed lower pattern to form a lower contact hole in the lower pattern, the lower contact hole extending from the upper contact hole.

Abstract: A system for control of emotional action expression including an emotion engine for creating an emotion according to information provided from a plurality of sensors, and an emotional action expression/actuation control unit for detecting an emotion platform profile and an emotion property from the created emotion and determining the action expression corresponding to the created emotion to control a target actuator. A control unit controls the motion of the target actuator under the control of the emotional action expression/actuation control unit.

Abstract: A method of fabricating a semiconductor device including a fin field effect transistor (Fin-FET) includes forming sacrificial bars on a semiconductor substrate, patterning the sacrificial bars to form sacrificial islands on the semiconductor substrate, forming a device isolation layer to fill a space between the sacrificial islands, selectively removing the sacrificial islands to expose the semiconductor substrate below the sacrificial islands, and anisotropically etching the exposed semiconductor substrate using the device isolation layer as an etch mask to form a recessed channel region. The recessed channel region allows the channel width and channel length of a transistor to be increased, thereby reducing the occurrence of short channel effects and narrow channel effects in highly integrated semiconductor devices.

Abstract: A robot actuator and a robot actuating method. In the robot actuator, when an input part detects an external stimulus signal according to a user's contact, a control part receives the detected external stimulus signal to create sensor data. The control part determines an output reaction, and an output actuator through the created sensor data and controls the output actuator according to the determined output reaction. Thus, an axial skeletal unit of an output part is moved according to an operation of the output actuator to express the output reaction. Accordingly, a natural, lively reaction of the robot actuator to an external stimulus can be achieved.

Abstract: An integrated circuit device incorporating a metallurgical bond to enhance thermal conduction to a heat sink. In a semiconductor device, a surface of an integrated circuit die is metallurgically bonded to a surface of a heat sink. In an exemplary method of manufacturing the device, the upper surface of a package substrate includes an inner region and a peripheral region. The integrated circuit die is positioned over the substrate surface and a first surface of the integrated circuit die is placed in contact with the package substrate. A metallic layer is formed on a second opposing surface of the integrated circuit die. A preform is positioned on the metallic layer and a heat sink is positioned over the preform. A joint layer is formed with the preform, metallurgically bonding the heat sink to the second surface of the integrated circuit die.

Abstract: An electrophoretic display and a method of manufacturing the electrophoretic display are provided. The electrophoretic display includes an lower electrode formed on an under layer, an lower electrode protection layer formed on the lower electrode, an insulating template formed on the lower electrode protection layer and having a plurality of holes of smaller size than the wavelength of visible rays region, a dielectric fluid filling the holes and having a color, a plurality of charged particles suspended in the dielectric fluid filling each of the plurality of holes having a color different from the color of the dielectric fluid, and an upper electrode formed on the insulating template in sequential order. Accordingly, a problem of agglomeration of the charged particles can be solved by the insulating template having holes of smaller size than the wavelength of visible rays region, and thus a reliable electrophoretic display emitting light of one color or natural colors is achieved.

Abstract: Provided is a method of fabricating a semiconductor device having a contact hole with a high aspect-ratio. The method includes: sequentially forming a lower pattern and an upper layer on a semiconductor substrate; sequentially forming a lower mask layer and an upper mask layer on the upper layer; sequentially patterning the lower and upper mask layers to form a hole exposing a top surface of the upper layer on the lower pattern; using the upper mask layer as an etching mask to anisotropically etch the exposed top surface to form an upper contact hole exposing a top surface of the lower pattern; and using the lower mask layer as an etching mask to anisotropically etch the exposed lower pattern to form a lower contact hole in the lower pattern, the lower contact hole extending from the upper contact hole.

Abstract: Disclosed herein is a working electrode structure of a biosensor, in which the shape of one end of the working electrode including a reaction portion is modified to have different electrode widths for each section along a lengthwise direction within the reaction portion, so that although there is caused a length error in the reaction portion of the working electrode in the process of fixing a reagent during the fabrication of the electrode, an error for an area of the reaction portion can be restricted at the maximum, which results in a reduction in measurement error and an improvement in measurement reliability.