Abstract: A method of filling a contact hole of a semiconductor device preceded by dry cleaning for removing a damaged layer resulting from dry etching is provided. The method includes selectively exposing an underlying material layer by a dry etch and dry cleaning including passing plasma excited from a source gas over the exposed underlying material layer to remove the damaged layer formed from the dry etch. Subsequently, an electrically conductive layer with which to fill the contact hole is formed. The formation of the electrically conductive layer is performed in a separate chamber connected sequentially to a chamber for performing the dry cleaning to prevent the exposed underlying material layer inside the dry cleaned contact hole from being exposed to a source of contamination.

Abstract: A method of manufacturing a semiconductor device such as a contact structure and a gate structure having a silicide layer comprises the steps of: forming a contact hole for exposing a part of the silicon substrate by etching a part of an interdielectric layer formed on a silicon substrate; and first cleaning an exposed surface of the silicon substrate, comprising the steps of: forming a reactive layer by supplying a hydrogen gas in a plasma state and a fluorine-series gas to the silicon substrate and by chemically reacting with an oxide film formed on the exposed surface of the silicon substrate; and annealing to cause the reactive layer to be removed by vaporizing the reactive layer; forming a silicide layer on the surface of the silicon substrate exposed in the contact hole; second cleaning comprising the steps of: forming a reactive layer by supplying a hydrogen gas in a plasma state and a fluorine-series gas to the silicon substrate and by chemically reacting with an oxide film formed on the exposed surfa