Abstract: A method of semiconductor fabrication includes providing an unpatterned lightly doped Czochralski bulk silicon substrate (LDCBS substrate) having a concentration of oxygen atoms of at least (?) 1017 atoms/cm3 with a boron doping or n-type doping concentration of between 1×1012 cm?3 and 5×1014 cm?3. Before any oxidization processing, the LDCBS substrate is annealed at a nucleating temperature between 550° C. and 760° C. for a nucleating time that nucleates the oxygen atoms in a sub-surface region of the LDCBS substrate to form oxygen precipitates therefrom. After the annealing, a surface of the LDCBS substrate or an epitaxial layer on the surface of the LDCBS substrate is initially oxidized in an oxidizing ambient at a peak temperature of between 800° C. and 925° C. for a time less than or equal (?) to 30 minutes.

Abstract: Disclosed is a method for fabricating a transistor of a semiconductor device, the method comprising the steps of: providing a semiconductor; forming a gate electrode; performing a low-density ion implantation process with respect to the substrate, thereby forming an LDD ion implantation layer; forming an insulation spacer on a sidewall of the gate electrode; forming a diffusion barrier; performing a high-density ion implantation process with respect to the substrate, thereby forming a source/drain; performing a first thermal treatment process with respect to a resultant structure, so as to activate impurities in the source/drain, and simultaneously causing a diffusion velocity of the impurities in the source/drain to be reduced by the diffusion barrier; and forming a salicide layer.