Abstract: A display device includes a plurality of first pixels disposed in a first pixel area and initialized by a voltage of a first initialization power source, a plurality of second pixels disposed in a second pixel area and initialized by a voltage of a second initialization power source different from the first initialization power source, a data driver that supplies a data signal to a plurality of data lines connected to the first pixels and the second pixels, and a scan driver that supplies a scan signal to a plurality of scan lines connected to the first pixels and the second pixels. A black data signal supplied from the data driver to the first pixels and a black data signal supplied from the data driver to the second pixels are set to the same voltage.

Abstract: A semiconductor device with an isolation layer buried in a trench includes an interface layer formed on the surface of the trench, a buffer layer formed in the interface layer at a bottom corner of the trench, a liner layer formed over the interface layer, and a gap-fill layer gap-filling the trench over the liner layer. The trench includes a micro-trench formed at the bottom corner thereof, and the buffer layer fills the micro-trench.

Abstract: A semiconductor device includes a plurality of first conductive patterns separated by a damascene pattern, a second conductive pattern buried in the damascene pattern, and a spacer including an air gap between the second conductive pattern and the first conductive patterns.

Abstract: A semiconductor device with an isolation layer buried in a trench includes an interface layer formed on the surface of the trench, a buffer layer formed in the interface layer at a bottom corner of the trench, a liner layer formed over the interface layer, and a gap-fill layer gap-filling the trench over the liner layer. The trench includes a micro-trench formed at the bottom corner thereof, and the buffer layer fills the micro-trench.

Abstract: A semiconductor device includes a plurality of first conductive patterns separated by a damascene pattern, a second conductive pattern buried in the damascene pattern, and a spacer including an air gap between the second conductive pattern and the first conductive patterns.

Abstract: A semiconductor device with an isolation layer buried in a trench includes an interface layer formed on the surface of the trench, a buffer layer formed in the interface layer at a bottom corner of the trench, a liner layer formed over the interface layer, and a gap-fill layer gap-filling the trench over the liner layer. The trench includes a micro-trench formed at the bottom corner thereof, and the buffer layer fills the micro-trench.

Abstract: A semiconductor device includes a plurality of first conductive patterns separated by a damascene pattern, a second conductive pattern buried in the damascene pattern, and a spacer including an air gap between the second conductive pattern and the first conductive patterns.

Abstract: A semiconductor device with an isolation layer buried in a trench includes an interface layer formed on the surface of the trench, a buffer layer formed in the interface layer at a bottom corner of the trench, a liner layer formed over the interface layer, and a gap-fill layer gap-filling the trench over the liner layer. The trench includes a micro-trench formed at the bottom corner thereof, and the buffer layer fills the micro-trench.

Abstract: A semiconductor device includes a plurality of first conductive patterns separated by a damascene pattern, a second conductive pattern buried in the damascene pattern, and a spacer including an air gap between the second conductive pattern and the first conductive patterns.

Abstract: A method for fabricating a semiconductor device includes forming a trench by etching a substrate using a hard mask layer as an etch barrier, forming an insulation material which covers sidewalls of the trench, forming a sacrificial material which fills the trench and is planarized to expose the surface of the hard mask layer, forming a masking layer having a damaged region over the sacrificial material, selectively removing the damaged region of the masking layer, exposing a portion of the insulation material, which is formed at a sidewall of the trench, by etching a portion of the sacrificial material using the remaining masking layer as a barrier, and forming a side contact by removing the exposed insulation material.