Patents by Inventor Seunguk SHIN
Seunguk SHIN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11860774Abstract: An access method of a nonvolatile memory device included in a user device includes receiving a write request to write data into the nonvolatile memory device; detecting an application issuing the write request, a user context, a queue size of a write buffer, an attribute of the write-requested data, or an operation mode of the user device; and deciding one of a plurality of write modes to use for writing the write-requested data into the nonvolatile memory device according to the detected information. The write modes have different program voltages and verify voltage sets.Type: GrantFiled: July 28, 2021Date of Patent: January 2, 2024Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sangkwon Moon, Kyung Ho Kim, Seunguk Shin, Sung Won Jung
-
Patent number: 11543968Abstract: A computer system includes a host and a storage device. The host provides an input/output request (IO request). The storage device receives the IO request from the host and sends an interrupt informing input/output completion (IO completion) to the host after completing the IO request. The host adjusts the number of generated interrupts of the storage device using the number of delayed IOs. The computer system may adaptively control interrupt generation of the storage device based on a load status of a CPU or the number of delayed IOs. The interrupt generation of the storage device may be adjusted to obtain a CPU gain without loss of performance or processing time of the computer system.Type: GrantFiled: May 4, 2021Date of Patent: January 3, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Kyung-San Kim, Kyung Ho Kim, Seokhwan Kim, Seunguk Shin, Jihyun Lim
-
Publication number: 20210357319Abstract: An access method of a nonvolatile memory device included in a user device includes receiving a write request to write data into the nonvolatile memory device; detecting an application issuing the write request, a user context, a queue size of a write buffer, an attribute of the write-requested data, or an operation mode of the user device; and deciding one of a plurality of write modes to use for writing the write-requested data into the nonvolatile memory device according to the detected information. The write modes have different program voltages and verify voltage sets.Type: ApplicationFiled: July 28, 2021Publication date: November 18, 2021Inventors: Sangkwon MOON, Kyung Ho KIM, Seunguk SHIN, Sung WON JUNG
-
Publication number: 20210255780Abstract: A computer system includes a host and a storage device. The host provides an input/output request (IO request). The storage device receives the IO request from the host and sends an interrupt informing input/output completion (IO completion) to the host after completing the IO request. The host adjusts the number of generated interrupts of the storage device using the number of delayed IOs. The computer system may adaptively control interrupt generation of the storage device based on a load status of a CPU or the number of delayed IOs. The interrupt generation of the storage device may be adjusted to obtain a CPU gain without loss of performance or processing time of the computer system.Type: ApplicationFiled: May 4, 2021Publication date: August 19, 2021Applicant: Samsung Electronics Co., Ltd.Inventors: Kyung-San KIM, Kyung Ho KIM, Seokhwan KIM, Seunguk SHIN, Jihyun LIM
-
Patent number: 11093384Abstract: An access method of a nonvolatile memory device included in a user device includes receiving a write request to write data into the nonvolatile memory device; detecting an application issuing the write request, a user context, a queue size of a write buffer, an attribute of the write-requested data, or an operation mode of the user device; and deciding one of a plurality of write modes to use for writing the write-requested data into the nonvolatile memory device according to the detected information. The write modes have different program voltages and verify voltage sets.Type: GrantFiled: May 19, 2020Date of Patent: August 17, 2021Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sangkwon Moon, Kyung Ho Kim, Seunguk Shin, Sung Won Jung
-
Patent number: 11023137Abstract: A computer system includes a host and a storage device. The host provides an input/output request (IO request). The storage device receives the IO request from the host and sends an interrupt informing input/output completion (IO completion) to the host after completing the IO request. The host adjusts the number of generated interrupts of the storage device using the number of delayed IOs. The computer system may adaptively control interrupt generation of the storage device based on a load status of a CPU or the number of delayed IOs. The interrupt generation of the storage device may be adjusted to obtain a CPU gain without loss of performance or processing time of the computer system.Type: GrantFiled: May 17, 2019Date of Patent: June 1, 2021Assignee: Samsung Electronics Co., Ltd.Inventors: Kyung-San Kim, Kyung Ho Kim, Seokhwan Kim, Seunguk Shin, Jihyun Lim
-
Publication number: 20200278926Abstract: An access method of a nonvolatile memory device included in a user device includes receiving a write request to write data into the nonvolatile memory device; detecting an application issuing the write request, a user context, a queue size of a write buffer, an attribute of the write-requested data, or an operation mode of the user device; and deciding one of a plurality of write modes to use for writing the write-requested data into the nonvolatile memory device according to the detected information. The write modes have different program voltages and verify voltage sets.Type: ApplicationFiled: May 19, 2020Publication date: September 3, 2020Inventors: Sangkwon MOON, Kyung Ho KIM, Seunguk SHIN, Sung WON JUNG
-
Patent number: 10657042Abstract: An access method of a nonvolatile memory device included in a user device includes receiving a write request to write data into the nonvolatile memory device; detecting an application issuing the write request, a user context, a queue size of a write buffer, an attribute of the write-requested data, or an operation mode of the user device; and deciding one of a plurality of write modes to use for writing the write-requested data into the nonvolatile memory device according to the detected information. The write modes have different program voltages and verify voltage sets.Type: GrantFiled: August 7, 2018Date of Patent: May 19, 2020Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sangkwon Moon, Kyung Ho Kim, Seunguk Shin, Sung Won Jung
-
Publication number: 20200142623Abstract: An electronic device includes a memory and a processor. The memory stores first data with regard to a first position of a data area of a storage device and second data with regard to a second position of the data area. When a size of the first data included in a first page is smaller than a reference size and a size of the second data included in a second page different from the first page is smaller than the reference size, the processor outputs data blocks including the first data and the second data, and outputs first metadata about the first position with regard to the first data and second metadata about the second position with regard to the second data. A size of the data blocks is smaller than a sum of a size of the first page and a size of the second page.Type: ApplicationFiled: June 28, 2019Publication date: May 7, 2020Applicant: Samsung Electronics Co., Ltd.Inventors: Yongmyung Lee, Seunguk Shin, Jieon Seol, Jinyoung Choi
-
Publication number: 20190272107Abstract: A computer system includes a host and a storage device. The host provides an input/output request (IO request). The storage device receives the IO request from the host and sends an interrupt informing input/output completion (IO completion) to the host after completing the IO request. The host adjusts the number of generated interrupts of the storage device using the number of delayed IOs. The computer system may adaptively control interrupt generation of the storage device based on a load status of a CPU or the number of delayed IOs. The interrupt generation of the storage device may be adjusted to obtain a CPU gain without loss of performance or processing time of the computer system.Type: ApplicationFiled: May 17, 2019Publication date: September 5, 2019Applicant: Samsung Electronics Co., Ltd.Inventors: Kyung-San Kim, Kyung Ho Kim, Seokhwan Kim, Seunguk Shin, Jihyun Lim
-
Patent number: 10318174Abstract: A computer system includes a host and a storage device. The host provides an input/output request (IO request). The storage device receives the request from the host and sends an interrupt informing input/output completion (IO completion) to the host after completing the IO request. The host adjusts the number of generated interrupts of the storage device using the number of delayed IOs. The computer system may adaptively control interrupt generation of the storage device based on a load status of a CPU or the number of delayed IOs. The interrupt generation of the storage device may be adjusted to obtain a CPU gain without loss of performance or processing time of the computer system.Type: GrantFiled: May 18, 2017Date of Patent: June 11, 2019Assignee: Samsung Electronics Co., Ltd.Inventors: Kyung-San Kim, Kyung Ho Kim, Seokhwan Kim, Seunguk Shin, Jihyun Lim
-
Publication number: 20180341582Abstract: An access method of a nonvolatile memory device included in a user device includes receiving a write request to write data into the nonvolatile memory device; detecting an application issuing the write request, a user context, a queue size of a write buffer, an attribute of the write-requested data, or an operation mode of the user device; and deciding one of a plurality of write modes to use for writing the write-requested data into the nonvolatile memory device according to the detected information. The write modes have different program voltages and verify voltage sets.Type: ApplicationFiled: August 7, 2018Publication date: November 29, 2018Inventors: Sangkwon Moon, Kyung Ho Kim, Seunguk Shin, Sung Won Jung
-
Patent number: 10042754Abstract: An access method of a nonvolatile memory device included in a user device includes receiving a write request to write data into the nonvolatile memory device; detecting an application issuing the write request, a user context, a queue size of a write buffer, an attribute of the write-requested data, or an operation mode of the user device; and deciding one of a plurality of write modes to use for writing the write-requested data into the nonvolatile memory device according to the detected information. The write modes have different program voltages and verify voltage sets.Type: GrantFiled: June 12, 2014Date of Patent: August 7, 2018Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sangkwon Moon, Kyung Ho Kim, Seunguk Shin, Sung Won Jung
-
Publication number: 20170336988Abstract: A computer system includes a host and a storage device. The host provides an input/output request (IO request). The storage device receives the request from the host and sends an interrupt informing input/output completion (IO completion) to the host after completing the IO request. The host adjusts the number of generated interrupts of the storage device using the number of delayed IOs. The computer system may adaptively control interrupt generation of the storage device based on a load status of a CPU or the number of delayed IOs. The interrupt generation of the storage device may be adjusted to obtain a CPU gain without loss of performance or processing time of the computer system.Type: ApplicationFiled: May 18, 2017Publication date: November 23, 2017Applicant: Samsung Electronics Co. , Ltd.Inventors: Kyung-San KIM, Kyung Ho KIM, Seokhwan KIM, Seunguk SHIN, Jihyun LIM
-
Patent number: 9697116Abstract: A writing method of a storage system which includes a host and a storage connected to the host, includes receiving journal data during a generation of a data writing transaction; inserting in a first map table, a plurality of entries, each entry including a first logical address of a first logical area of the storage and a second logical address of a second logical area of the storage; writing the journal data to a physical area of the storage corresponding to the first logical address; and remapping the physical area from the first logical address onto the second logical address using the plurality of entries when a size of a usable space of the first logical area is less than a desired value.Type: GrantFiled: August 4, 2014Date of Patent: July 4, 2017Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sangmok Kim, Kyung Ho Kim, Yeong-jae Woo, Seunguk Shin, Sungyong Seo
-
Publication number: 20150046670Abstract: A writing method of a storage system which includes a host and a storage connected to the host, includes receiving journal data during a generation of a data writing transaction; inserting in a first map table, a plurality of entries, each entry including a first logical address of a first logical area of the storage and a second logical address of a second logical area of the storage; writing the journal data to a physical area of the storage corresponding to the first logical address; and remapping the physical area from the first logical address onto the second logical address using the plurality of entries when a size of a usable space of the first logical area is less than a desired value.Type: ApplicationFiled: August 4, 2014Publication date: February 12, 2015Inventors: Sangmok KIM, Kyung Ho KIM, Yeong-jae WOO, Seunguk SHIN, Sungyong SEO
-
Publication number: 20140372678Abstract: An access method of a nonvolatile memory device included in a user device includes receiving a write request to write data into the nonvolatile memory device; detecting an application issuing the write request, a user context, a queue size of a write buffer, an attribute of the write-requested data, or an operation mode of the user device; and deciding one of a plurality of write modes to use for writing the write-requested data into the nonvolatile memory device according to the detected information. The write modes have different program voltages and verify voltage sets.Type: ApplicationFiled: June 12, 2014Publication date: December 18, 2014Inventors: Sangkwon Moon, Kyung Ho Kim, Seunguk Shin, Sung Won Jung
-
Publication number: 20140281361Abstract: A nonvolatile memory device comprises an interface configured to receive write data and a logical address of the write data, a data storage device comprising multiple physical blocks and configured to store an address mapping table array, and a controller configured to selectively load at least one address mapping table from the address mapping table array based on the logical address. The controller performs a deduplication operation for the write data by comparing the write data with data stored in a physical block having a physical address in the loaded address mapping table, to the exclusion of data stored in other physical blocks.Type: ApplicationFiled: March 10, 2014Publication date: September 18, 2014Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: HYUNCHUL PARK, SANGMOK KIM, OTAE BAE, KYUNG HO KIM, JIN SEOK KIM, SEUNGUK SHIN
-
Publication number: 20130185487Abstract: A memory system is provided which includes a storage device including a flash memory; and a host configured to request a storage device state and user pattern information via a user interface, to analyze the user pattern information, to set up a parameter of the storage device such that the storage device operates an optimization operation, according to the analyzing result, and to provide a command for the optimization operation to the storage device.Type: ApplicationFiled: January 18, 2013Publication date: July 18, 2013Applicant: Samsung Electronics Co., LtdInventors: Jin Seok KIM, Kyung Ho KIM, Hyunchul PARK, Seunguk SHIN, Otae BAE