Abstract: The present invention pertains to: an ethylene oligomerization catalyst containing a ligand compound; a catalyst composition employing same; and a method for producing an ethylene oligomer by using same. The catalyst exhibits excellent selectivity to oligomers and selectivity to 1-hexane, thus making it possible to mass-produce 1-hexane, which is an industrially useful chemical raw material, with high purity.

Abstract: A vortex prevention apparatus prevents a vortex from being generated at an outlet provided in the tank member and minimizes the change in the flow rate of the fluid being discharged through the outlet when a fluid filled in a tank member such as an insulation tank is being discharged, To this end, the vortex prevention apparatus is integrally coupled to a lower cover, having at least one outlet through which the fluid filled in the insulation tank is discharged, of a lower cap of the insulation tank, and includes a prevention body having a cone shape centered on an apex portion; spacing members extending vertically and horizontally from the prevention body; and mesh hole portions formed passing through the edges of the prevention body by the spacing members.

Abstract: An electronic device and method are disclosed. The electronic device includes a memory, a display, a touch sensor included in the display or coupled to the display, and configured to sense a touch. A pressure sensor configured to detect a pressure value of the touch and a processor electrically connected with the memory, the display, the touch sensor, and the pressure sensor, wherein the processor is configured to sense a first touch having a pressure value of a specified threshold value or greater, by using the touch sensor and the pressure sensor, store first location data of the first touch in the memory, sense a second touch, by using the touch sensor and the pressure sensor, wherein the second touch has a pressure value of the specified threshold value or greater and is made after sensing the first touch and perform a specified operation of utilizing the first location data and second location data of the second touch as an input, in response to sensing the second touch.

Abstract: An electronic device and method are disclosed. The electronic device includes a memory, a display, a touch sensor included in the display or coupled to the display, and configured to sense a touch. A pressure sensor configured to detect a pressure value of the touch and a processor electrically connected with the memory, the display, the touch sensor, and the pressure sensor, wherein the processor is configured to sense a first touch having a pressure value of a specified threshold value or greater, by using the touch sensor and the pressure sensor, store first location data of the first touch in the memory, sense a second touch, by using the touch sensor and the pressure sensor, wherein the second touch has a pressure value of the specified threshold value or greater and is made after sensing the first touch and perform a specified operation of utilizing the first location data and second location data of the second touch as an input, in response to sensing the second touch.

Abstract: A depth pixel of a three-dimensional image sensor includes a first photo gate which is turned on/off in response to a first photo control signal, a first photo detection area configured to generate first charges based on a received light reflected from a subject when the first photo gate is turned on, a first transmission gate which is turned on/off in response to a first transmission control signal, a first floating diffusion area configured to accumulate the first charges generated from the first photo detection area when the first transmission gate is turned on, and a first compensation unit configured to generate second charges which are different from the first charges based on ambient light components included in the received light to supply the second charges to the first floating diffusion area.

Abstract: An image sensor according to an example embodiment of includes a first pixel and a second pixel in a first row. The first pixel includes a first photoelectric conversion element at a first depth in a semiconductor substrate and the first photoelectric conversion element is configured to convert a first visible light spectrum into a first photo charge, and the second pixel includes a second photoelectric conversion element at a second depth from the first depth in the semiconductor substrate, the second photoelectric conversion element is at least partially overlapped by the first photoelectric conversion element in a vertical direction, and the second photoelectric conversion element is configured to convert a second visible light spectrum into a second photo charge.

Abstract: A depth pixel of an image sensor includes a depth sensing element configured to generate first charges that are photo-electrically converted from a light reflected from an object, a first floating diffusion node configured to receive the first charges from the depth sensing element, a second floating diffusion node configured to output second charges corresponding to a component of a reflection light where a component of an ambient light is cancelled, and an ambient light cancellation circuit configured to detect the ambient light to control a barrier level of a charge transfer path between the first floating diffusion node and the second floating diffusion node in response to the ambient light.

Abstract: An image sensor according to an example embodiment of includes a first pixel and a second pixel in a first row. The first pixel includes a first photoelectric conversion element at a first depth in a semiconductor substrate and the first photoelectric conversion element is configured to convert a first visible light spectrum into a first photo charge, and the second pixel includes a second photoelectric conversion element at a second depth from the first depth in the semiconductor substrate, the second photoelectric conversion element is at least partially overlapped by the first photoelectric conversion element in a vertical direction, and the second photoelectric conversion element is configured to convert a second visible light spectrum into a second photo charge.

Abstract: A depth pixel of an image sensor includes a depth sensing element configured to generate first charges that are photo-electrically converted from a light reflected from an object, a first floating diffusion node configured to receive the first charges from the depth sensing element, a second floating diffusion node configured to output second charges corresponding to a component of a reflection light where a component of an ambient light is cancelled, and an ambient light cancellation circuit configured to detect the ambient light to control a barrier level of a charge transfer path between the first floating diffusion node and the second floating diffusion node in response to the ambient light.

Abstract: A depth pixel of a three-dimensional image sensor includes a first photo gate which is turned on/off in response to a first photo control signal, a first photo detection area configured to generate first charges based on a received light reflected from a subject when the first photo gate is turned on, a first transmission gate which is turned on/off in response to a first transmission control signal, a first floating diffusion area configured to accumulate the first charges generated from the first photo detection area when the first transmission gate is turned on, and a first compensation unit configured to generate second charges which are different from the first charges based on ambient light components included in the received light to supply the second charges to the first floating diffusion area.

Abstract: A depth-sensing pixel included in a three-dimensional (3D) image sensor includes: a photoelectric conversion device configured to generate an electrical charge by converting modulated light reflected by a subject; a capture transistor, controlled by a capture signal applied to the gate thereof, the photoelectric conversion device being connected to the drain thereof; and a transfer transistor, controlled by a transfer signal applied to the gate thereof, the source of the capture transistor being connected to the drain thereof, and a floating diffusion region being connected to the source thereof.