Abstract: A prelithiated negative electrode, and a secondary battery including a prelithiated electrode, including a negative electrode current collector; and a negative electrode active material layer present on at least one surface of the negative electrode current collector. The negative electrode active material layer includes high-capacity artificial graphite having no carbon coating. The negative electrode active material layer is prelithiated, and the content of lithium intercalated to the prelithiated negative electrode active material layer is 3% to 5% based on the lithium content intercalated when the negative electrode is charged to 100%.

Abstract: Provided is a method capable of preparing high-purity aliphatic isocyanate, particularly, xylylene isocyanate in a high yield in a simple manner without an additional separate process, wherein when aliphatic isocyanate is prepared using phosgene, a side-reaction inhibitor capable of inhibiting side-reactions is introduced during phosgenation.

Abstract: Provided is a method capable of preparing high-purity aliphatic isocyanate, particularly, xylylene isocyanate in a high yield in a simple manner without an additional separate process, wherein when aliphatic isocyanate is prepared using phosgene, a side-reaction inhibitor capable of inhibiting side-reactions is introduced during phosgenation.

Abstract: Provided is a method capable of preparing high-purity aliphatic isocyanate, particularly, xylylene isocyanate in a high yield in a simple manner without an additional separate process, wherein when aliphatic isocyanate is prepared using phosgene, a side-reaction inhibitor capable of inhibiting side-reactions is introduced during phosgenation.

Abstract: An ion beam apparatus and a method of selecting desired beam are disclosed. An ion source generates ions, a mass spectrometer extracts desired ion species, and a mirror selectively blocks ions having high mass and pass ions having low mass.

Abstract: A method for monitoring an ion implanter includes positioning a substrate behind an interceptor for intercepting a portion of an ion beam to be irradiated toward the substrate, irradiating a first ion beam toward the substrate to form a first shadow on the substrate, rotating the substrate about a central axis of the substrate, irradiating a second ion beam toward the substrate to form a second shadow on the substrate, and measuring a dosage of ions implanted into the substrate to monitor whether the rotation of the substrate has been normally performed. Preferably, a dosage of ions implanted into the substrate is calculated from a thermal wave value of the substrate and whether the rotation of the substrate has been normally performed is monitored by comparing the thermal wave value corresponding to the first shadow with a reference thermal wave value.

Abstract: A method for monitoring an ion implanter includes positioning a substrate behind an interceptor for intercepting a portion of an ion beam to be irradiated toward the substrate, irradiating a first ion beam toward the substrate to form a first shadow on the substrate, rotating the substrate about a central axis of the substrate, irradiating a second ion beam toward the substrate to form a second shadow on the substrate, and measuring a dosage of ions implanted into the substrate to monitor whether the rotation of the substrate has been normally performed. Preferably, a dosage of ions implanted into the substrate is calculated from a thermal wave value of the substrate and whether the rotation of the substrate has been normally performed is monitored by comparing the thermal wave value corresponding to the first shadow with a reference thermal wave value.