Abstract: A method of manufacturing a flash memory device is disclosed. A first oxide layer, a nitride layer, a second oxide layer, and a first polysilicon layer, which is a part of a polysilicon layer for a control gate, are formed to a predetermined thickness on a semiconductor substrate. A first etch process is performed to form gate patterns. An insulating layer is formed on the entire surface. A second etch process is implemented so that insulating layer spacers are formed on both sidewalls of each gate pattern while exposing the first polysilicon layer. A second polysilicon layer for the control gate is formed on the entire surface.

Abstract: Disclosed are an apparatus and a method for controlling music play in a mobile communication terminal. The apparatus includes a motion recognition sensor unit for detecting a motion of the mobile communication terminal and outputting detection signals, a sound source chip for outputting sound, and a controller for receiving the detection signals from the motion recognition sensor unit, calculating motion values of the mobile communication terminal, and controlling the sound source chip to output sounds dependent on the calculated motion values. The apparatus includes a user interface required for the music play, a display unit for displaying music to be played, a motion recognition sensor unit for detecting a motion of the mobile terminal, a sound file storage unit including an area for storing at least one music information, a controller for controlling corresponding music to be played according a motion of the mobile terminal, and a speaker for outputting sounds of the played music.

Abstract: Disclosed is a method of manufacturing a semiconductor device. A floating gate is formed and a nitrification process is then implemented. With the disclosed process, it is possible to improve the roughness of the top surface of the floating gate electrode. Furthermore, a nitrification process and a dielectric film formation process are implemented in-situ, which simplifies the manufacturing process.

Abstract: Disclosed is a method of forming an oxynitride film. The method comprises the steps of loading a silicon substrate into an oxidization furnace, implanting an oxygen based source gas into the oxidization furnace to grow a pure silicon oxide film on the silicon substrate, blocking implantation of the oxygen based source gas and implanting an inert gas to exhaust the oxygen based source gas remaining within the oxidization furnace, raising a temperature within the oxidization furnace to a nitrification process temperature, stabilizing the temperature within the oxidization furnace, implementing a nitrification process for the pure silicon oxide film by implanting a nitrogen based source gas, and stopping implantation of the nitrogen based source gas and rapidly cooling the oxidization furnace while implanting the inert gas into the oxidization furnace.

Abstract: Disclosed is a method of forming an oxynitride film. The method comprises the steps of loading a silicon substrate into an oxidization furnace, implanting an oxygen based source gas into the oxidization furnace to grow a pure silicon oxide film on the silicon substrate, blocking implantation of the oxygen based source gas and implanting an inert gas to exhaust the oxygen based source gas remaining within the oxidization furnace, raising a temperature within the oxidization furnace to a nitrification process temperature, stabilizing the temperature within the oxidization furnace, implementing a nitrification process for the pure silicon oxide film by implanting a nitrogen based source gas, and stopping implantation of the nitrogen based source gas and rapidly cooling the oxidization furnace while implanting the inert gas into the oxidization furnace.

Abstract: Disclosed is a method of manufacturing a semiconductor device. A floating gate is formed and a nitrification process is then implemented. It is thus possible to improve the roughness of the top surface of the floating gate electrode. Furthermore, a nitrification process and a dielectric film formation process are implemented in-situ. It is possible to simplify the process.

Abstract: The present invention generally relates to a capacitor of a semiconductor device and a method of manufacturing such capacitors that improve the processing yield and the reliability of device operation by forming the plate electrode from a p-type polysilicon, thereby improving device resistance to write operation failures resulting from concentration of holes in the plate electrode terminal during a data write operation.

Abstract: A single crystal silicon growth apparatus, comprising: a chamber where a silicon substrate is to be inserted; a heat source for rising the temperature in an interior of the chamber; a cooling line for rapidly dropping the temperature in the interior of the chamber; a gas sprayer for providing a source gas and a purge gas inside the chamber; a gas inflow line connected to the gas sprayer for inflowing the source gas and the purge gas into the gas sprayer; and a gas exhausting line for maintaining the interior of the chamber with a vacuum.

Abstract: The present invention relates to semiconductor manufacturing field, more particularly, to a process of forming a charge storage electrode to which a selective hemispherical grains (HSG) silicon film is applied. The object of the present invention is to provide a method of forming a charge storage electrode having the selective HSG silicon film in semiconductor device which can secure a sufficient capacitor effective surface area by obtaining desired grain size at the time of selective HSG silicon film formation. The present invention prevents remaining of carbon component which obstructs the growth of HSG silicon film after dry etching process by limiting the carbon halide gas used in dry etching process of amorphous silicon film for defining the charge storage electrode at the time of process of forming the charge storage electrode having selective HSG silicon film.

Abstract: A method for fabricating a crown-type capacitor of a semiconductor device includes the steps of: forming a plurality of bit lines on the interlevel dielectric layer in a cell region and a periphery region of a substrate; forming a third oxide layer to fill gaps existing between the plurality of bit lines in the cell region; forming an etch-blocking layer and a first oxide layer over the entire structure obtained by forming the third oxide layer; forming a plurality of via-holes by anisotropically etching the first oxide layer, etch-blocking layer and third oxide layer, to expose the interlevel dielectric layer in the cell region; forming a silicon conductive layer, for forming a lower electrode of the crown-type capacitor, over the cell region of the structure having the plurality of via-holes to make electrical contact with the interlevel dielectric layer, and then forming a second oxide layer; completing the lower electrode by anisotropically etching the second oxide layer and the silicon conductive layer,

Abstract: The present invention is a method which can obtain an actual value close to a desired capacitance of capacitor by precisely monitoring the area variation rate of film by using a correlation between a height of hemispherical grains formed on a surface of film and a surface area of film. The present invention provides a method of calculating an area variation rate `C.sub.E ` by using the porosity ratio `f.sub.v ` and the height `t` of hemispherical grains and measuring the capacitance of capacitor by using the obtained area variation rate. According to this method, the area variation rate of film can be obtained close to actual value by measuring the height of hemispherical grains formed on the surface of film, and the variation in capacitance before completion of capacitor can be precisely obtained.

Abstract: A clutch for a compressor includes a pulley rotatably installed on a main body of the compressor to be coaxial with a rotary shaft of the compressor, a hub member fixed at the rotary shaft and having a flange through which a plurality of recesses are formed at its outer peripheral surface at intervals of a predetermined distance, elastic members, parts of which are received to the respective recesses to be supported, and other parts of which protrude from the recesses, an outer ring member for supporting the protruding parts of the elastic members, a stopper member for supporting the protruding parts of the elastic members together with the outer ring member to prevent the elastic members from moving, and a disk fixed on the outer ring member, for transmitting power by selectively being tightly coupled to or separated from a frictional surface of the pulley.