Abstract: A signal generation circuit generates a first synchronization signal by delaying a first input signal in synchronization with a first division clock signal, and generates a second synchronization signal by delaying a second input signal in synchronization with a second division clock signal. The signal generation circuit adjusts pulse widths of the first and second synchronization signals based on an on-control signal and an off-control signal. The signal generation circuit includes a retiming circuit configured to generate an output signal by retiming a preliminary output signal, generated from the first and second synchronization signals, based on the first and second division clock signals.

Abstract: A signal driver includes a first driver, a second driver, an on-timing control circuit, and an off-timing control circuit. The first driver is configured to generate a first driving pulse signal by inverting and driving an input pulse signal. The second driver is configured to generate a second driving pulse signal by inverting and driving the first driving pulse signal. The on-timing control circuit is configured to pull-up drive or pull-down drive the first driving pulse signal based on a first on-timing control signal, a second on-timing control signal, and the input pulse signal. The off-timing control circuit is configured to pull-up drive or pull-down drive the second driving pulse signal based on a first off-timing control signal, a second off-timing control signal, and the first driving pulse signal.

Abstract: A semiconductor device includes an internal clock generation circuit, a command generation circuit, and an address generation circuit. The internal clock generation circuit generates a command clock signal and an inverted command clock signal, wherein a cycle of the command clock signal and a cycle of the inverted command clock signal are determined by a mode. The command generation circuit generates a first command based on a first internal control signal and the command clock signal and generates a second command based on a second internal control signal and the inverted command clock signal. The address generation circuit generates a latch address based on the first internal control signal or a second internal control signal.

Abstract: A semiconductor apparatus includes a clock path, a command path, a delay monitoring circuit, and an output control circuit. The clock path generates a delay clock signal by delaying a clock signal. The command path generates an output command signal from on one of a command signal and the clock signal, based on a monitoring signal. The delay monitoring circuit generates a delay control signal and a latency control signal based on a phase difference between the delay clock signal and the output command signal, when the monitoring signal is enabled. The output control circuit generates an output enable signal by synchronizing the output command signal with the delay clock signal, based on the latency control signal.

Abstract: A semiconductor device and command generation method, the semiconductor device includes a command recovery circuit configured to receive a command from a plurality of commands, to store a code signal which is generated by encoding the received command from the plurality of commands, depending on the received command, and generate a plurality of internal commands by decoding a command code signal which is generated from the code signal after shifting the received command depending on a shifting control signal; and a memory circuit configured to perform an internal operation depending on the plurality of internal commands.

Abstract: A signal generation circuit generates a first synchronization signal by delaying a first input signal in synchronization with a first division clock signal, and generates a second synchronization signal by delaying a second input signal in synchronization with a second division clock signal. The signal generation circuit adjusts pulse widths of the first and second synchronization signals based on an on-control signal and an off-control signal. The signal generation circuit includes a retiming circuit configured to generate an output signal by retiming a preliminary output signal, generated from the first and second synchronization signals, based on the first and second division clock signals.

Abstract: A strobe signal generation circuit includes a trigger circuit configured to generate a pull-up signal and a pull-down signal according to a clock signal; a first main driver configured to generate a differential data strobe signal in response to receiving the pull-up signal and the pull-down signal; and a second main driver configured to generate an other differential data strobe signal in response to receiving the pull-up signal and the pull-down signal from among the at least one pull-down signal through opposite terminals than the first main driver received the pull-up signal and the pull-down signal.

Abstract: A semiconductor device includes a command synthesis circuit synchronized with a first division clock signal to shift a command based on an offset signal and synchronized with a second division clock signal to generate a command synthesis signal from the shifted command. The semiconductor device also includes a strobe control signal synthesis circuit synchronized with the second division clock signal to generate a strobe synthesis signal from a strobe control signal. The semiconductor device further includes a drive control circuit generating a drive control signal from any one of the command synthesis signal and a drive signal based on the strobe synthesis signal.

Abstract: A semiconductor device includes a command synthesis circuit synchronized with a first division clock signal to shift a command based on an offset signal and synchronized with a second division clock signal to generate a command synthesis signal from the shifted command. The semiconductor device also includes a strobe control signal synthesis circuit synchronized with the second division clock signal to generate a strobe synthesis signal from a strobe control signal. The semiconductor device further includes a drive control circuit generating a drive control signal from any one of the command synthesis signal and a drive signal based on the strobe synthesis signal.

Abstract: A skew compensation circuit includes a skew detection circuit configured to generate skew detection signals by detecting a skew characteristic of a basic logic element constituting a semiconductor apparatus, a skew compensation signal generation circuit configured to generate a skew compensation signal by comparing the skew detection signals and a plurality of reference voltages, a variable delay circuit configured to generate a compensation signal by delaying an input signal by a delay time varied according to the skew compensation signal, and a reference voltage generation circuit configured to generate the plurality of reference voltages of which offset components are compensated for according to variations of a temperature and an external voltage.

Abstract: A skew compensation circuit includes a skew detection circuit configured to generate skew detection signals by detecting a skew characteristic of a basic logic element constituting a semiconductor apparatus, a skew compensation signal generation circuit configured to generate a skew compensation signal by comparing the skew detection signals and a plurality of reference voltages, a variable delay circuit configured to generate a compensation signal by delaying an input signal by a delay time varied according to the skew compensation signal, and a reference voltage generation circuit configured to generate the plurality of reference voltages of which offset components are compensated for according to variations of a temperature and an external voltage.

Abstract: A strobe signal generation circuit includes a trigger circuit configured to generate a pull-up signal and a pull-down signal according to a clock signal; a first main driver configured to generate a differential data strobe signal in response to receiving the pull-up signal and the pull-down signal; and a second main driver configured to generate an other differential data strobe signal in response to receiving the pull-up signal and the pull-down signal from among the at least one pull-down signal through opposite terminals than the first main driver received the pull-up signal and the pull-down signal.

Abstract: A skew compensation circuit includes a skew detection circuit configured to generate skew detection signals by detecting a skew characteristic of a basic logic element constituting a semiconductor apparatus, a skew compensation signal generation circuit configured to generate a skew compensation signal by comparing the skew detection signals and a plurality of reference voltages, a variable delay circuit configured to generate a compensation signal by delaying an input signal by a delay time varied according to the skew compensation signal, and a reference voltage generation circuit configured to generate the plurality of reference voltages of which offset components are compensated for according to variations of a temperature and an external voltage.

Abstract: A semiconductor system includes a controller operatively coupled to a semiconductor device, the controller being suitable in a training mode for receiving an external signal and a first data signal from an external device and for transmitting the received external signal and the first data signal to the semiconductor device; and the semiconductor device being suitable in the training mode for determining a level of a reference voltage in response to the first data signal, and for transmitting a second data signal to the controller by buffering the external signal based on the reference voltage without performing a termination operation during an output period of the second data signal, wherein the controller controls an enable timing of the external signal by receiving the second data signal.

Abstract: A memory apparatus may include a plurality of ranks commonly coupled to an input/output (I/O) terminal. Non-target ranks other than a target rank among the plurality of ranks may be configured to perform an on die termination operation based on a read operation of the target rank.

Abstract: A semiconductor system includes a controller operatively coupled to a semiconductor device, the controller being suitable in a training mode for receiving an external signal and a first data signal from an external device and for transmitting the received external signal and the first data signal to the semiconductor device; and the semiconductor device being suitable in the training mode for determining a level of a reference voltage in response to the first data signal, and for transmitting a second data signal to the controller by buffering the external signal based on the reference voltage without performing a termination operation during an output period of the second data signal, wherein the controller controls an enable timing of the external signal by receiving the second data signal.

Abstract: A memory apparatus may include a plurality of ranks commonly coupled to an input/output (I/O) terminal. Non-target ranks other than a target rank among the plurality of ranks may be configured to perform an on die termination operation based on a read operation of the target rank.

Abstract: A semiconductor system includes a controller operatively coupled to a semiconductor device, the controller being suitable in a training mode for receiving an external signal and a first data signal from an external device and for transmitting the received external signal and the first data signal to the semiconductor device; and the semiconductor device being suitable in the training mode for determining a level of a reference voltage in response to the first data signal, and for transmitting a second data signal to the controller by buffering the external signal based on the reference voltage without performing a termination operation during an output period of the second data signal, wherein the controller controls an enable timing of the external signal by receiving the second data signal.

Abstract: A semiconductor device including an input unit suitable for transferring external command signals provided from an external device to an internal device and a detection unit suitable for detecting a predetermined command signal among the external command signals, and restricting the transfer of the detected command signal.

Abstract: A data strobing circuit may include: an operating speed detection unit configured to detect an operating speed of a semiconductor apparatus according to a clock signal, and generate a control signal with a different value depending on the detected operating speed; and a strobe signal generation unit configured to adjust a delay time and pulse width of a read pulse according to the control signal and output an adjusted signal as a strobe signal.