Patents by Inventor Seung Yang

Seung Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11973229
    Abstract: The present disclosure relates to an anode for a lithium-metal battery, a manufacturing method of the same, and a lithium-metal battery including the anode. The anode for a lithium-metal battery includes a complex hierarchical structure current collector which includes an inverted pyramid-shaped micro hole pattern and nanostructures provided within the inverted pyramid-shaped micro hole pattern; and a lithium metal which is electrodeposited on the nanostructure of the current collector. As a result, it is possible to increase the life stability of the battery and increase the coulombic efficiency.
    Type: Grant
    Filed: June 23, 2021
    Date of Patent: April 30, 2024
    Assignee: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Jae Young Seok, Sanha Kim, Inyeong Yang, Ji-Hun Jeong, Seung Seob Lee
  • Publication number: 20240127835
    Abstract: An electronic device includes a communication circuit, a speaker, and a processor. The processor is configured to identify a bitrate of a first audio bitstream received via the communication circuit from an external electronic device. The processor is configured to obtain, in response to the bitrate lower than a reference value, an audio signal by executing a bandwidth extension (BWE) for the first audio bitstream based on at least one coding parameter obtained from a second audio bitstream previously received via the communication circuit from the external electronic device before the first audio bitstream. The processor is configured to obtain, in response to the bitrate higher than or equal to the reference value, the audio signal for the first audio bitstream without executing the BWE. The processor is configured to output, based on the audio signal, audio via the speaker.
    Type: Application
    Filed: October 9, 2023
    Publication date: April 18, 2024
    Inventors: Hyunwook KIM, Kyoungho BANG, Hangil MOON, Jaeha PARK, Hyunchul YANG, Seung HEO
  • Patent number: 11957415
    Abstract: A surgery optimizing method performed by a computer is provided. The method includes generating a plurality of genes corresponding to a surgical procedure based on the surgical procedure composed of at least one detailed surgical operation, performing virtual surgery on each of the plurality of genes to evaluate whether surgery is optimized, selecting at least one gene among the plurality of genes based on the evaluation result to apply a genetic algorithm, and applying the genetic algorithm to generate a new gene and deriving an optimal surgical procedure based on the new gene.
    Type: Grant
    Filed: August 19, 2020
    Date of Patent: April 16, 2024
    Assignee: HUTOM CO., LTD.
    Inventors: Jong Hyuck Lee, Hoon Mo Yang, Ho Seung Kim
  • Publication number: 20240114739
    Abstract: A display apparatus includes a first area and a second area, a pixel defining layer having a first opening in the first area with a first area size, and a second opening in the second area with a second area size, a first light emitting unit having an emission area size corresponding to the first area size and emitting first color light, a second light emitting unit having an emission area size corresponding to the second area size and emitting the first color light, a first pixel circuit in the second area and connected to the first light emitting unit, a second pixel circuit in the second area and connected to the second light emitting unit, and an electronic module in the first area and overlapping the first opening. An opening rate of the first light emitting unit is smaller than that of the second light emitting unit.
    Type: Application
    Filed: September 14, 2023
    Publication date: April 4, 2024
    Inventors: SEUNG-LYONG BOK, Chang Sik KIM, JUNGJIN YANG, HYEIN JEONG
  • Patent number: 11942551
    Abstract: A semiconductor device includes a multi-channel active pattern, a plurality of gate structures on the multi-channel active pattern and spaced apart from each other in a first direction, the plurality of gate structures including a gate electrode that extends in a second direction different from the first direction, a source/drain recess between the adjacent gate structures, and a source/drain pattern on the multi-channel active pattern in the source/drain recess, wherein the source/drain pattern includes: a semiconductor liner layer including silicon-germanium and extending along the source/drain recess, a semiconductor filling layer including silicon-germanium on the semiconductor liner layer, and at least one or more semiconductor insertion layers between the semiconductor liner layer and the semiconductor filling layer, and wherein the at least one or more semiconductor insertion layers have a saddle structure.
    Type: Grant
    Filed: November 5, 2021
    Date of Patent: March 26, 2024
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jung Taek Kim, Seok Hoon Kim, Pan Kwi Park, Moon Seung Yang, Seo Jin Jeong, Min-Hee Choi, Ryong Ha
  • Patent number: 11932704
    Abstract: The disclosure provides trispecific and/or trivalent binding proteins comprising four polypeptide chains that form three antigen binding sites that specifically bind one or more target proteins, wherein a first pair of polypeptides forming the binding protein possess dual variable domains having a cross-over orientation and wherein a second pair of polypeptides forming the binding protein possess a single variable domain. The disclosure also provides methods for making trispecific and/or trivalent binding proteins and uses of such binding proteins.
    Type: Grant
    Filed: October 29, 2021
    Date of Patent: March 19, 2024
    Assignee: SANOFI
    Inventors: Zhi-Yong Yang, Gary J. Nabel, Lan Wu, Edward Seung, Ronnie Wei, Jochen Beninga, Ercole Rao, Wulf Dirk Leuschner, Christian Beil, Christian Lange, Carsten Corvey
  • Patent number: 11932549
    Abstract: It is introduced that a device of manufacturing lithium sulfate comprising: a reaction body in which a reaction of lithium phosphate and sulfuric acid is performed, the reaction body being divided into an upper space and a lower space; a pressurizer for applying pressure to the inside of the reaction body; a stirrer disposed in the upper space for stirring the lithium phosphate and sulfuric acid to produce a mixture containing lithium sulfate and phosphoric acid; and a filter disposed inside the reaction body and separating the filtrate containing the phosphoric acid into the lower space by filtering the mixture.
    Type: Grant
    Filed: August 2, 2019
    Date of Patent: March 19, 2024
    Assignees: POSCO CO., LTD, RESEARCH INSTITUTE OF INDUSTRIAL SCIENCE & TECHNOLOGY
    Inventors: Juyoung Kim, Ki Young Kim, Woonkyoung Park, Jung Kwan Park, Woo Chul Jung, Kwang Seok Park, Hyun Woo Lee, Sang Won Kim, Heok Yang, Seung Taek Kuk
  • Patent number: 11923586
    Abstract: A combustion section defines an axial direction, a radial direction, and a circumferential direction. The combustion section includes a casing that defines a diffusion chamber. A combustion liner is disposed within the diffusion chamber and defines a combustion chamber. The combustion liner is spaced apart from the casing such that a passageway is defined between the combustion liner and the casing. A fuel cell assembly is disposed in the passageway. The fuel cell assembly includes a fuel cell stack having a plurality of fuel cells each extending between an inlet end and an outlet end. Each fuel cell of the plurality of fuel cells includes an air channel and a fuel channel each fluidly coupled to the combustion chamber.
    Type: Grant
    Filed: November 10, 2022
    Date of Patent: March 5, 2024
    Assignee: General Electric Company
    Inventors: Seung-Hyuck Hong, Richard L Hart, Honggang Wang, Anil Raj Duggal, Michael Anthony Benjamin, Andrew Wickersham, Shih-Yang Hsieh
  • Patent number: 11911983
    Abstract: Provided is a method of forming a micro/nanowire having a nanometer- to micrometer-sized diameter at predetermined positions of an object. The method includes: preparing a micro/nanopipette having a tip with an inner diameter which is substantially the same as the diameter of the micro/nanowire to be formed; filling the micro/nanopipette with a solution containing a micro/nanowire-forming material; brining the solution into contact with the object through the tip of the micro/nanopipette; and pulling the micro/nanopipette from the object at a pulling speed lower than or equal to a predetermined critical speed (?c) to obtain a micro/nanowire having substantially the same diameter as the inner diameter of the micro/nanopipette tip.
    Type: Grant
    Filed: May 3, 2021
    Date of Patent: February 27, 2024
    Assignee: POSTECH RESEARCH AND BUSINESS DEVELOPMENT FOUNDATION
    Inventors: Jung Ho Je, Un Yang, Seung Soo Oh, Moon Jung Yong, Byung Hwa Kang
  • Publication number: 20240056068
    Abstract: A device for switching a differential signal includes an input port, a first output port, a second output port, a first micro electromechanical system (MEMS) switch, and a second MEMS switch. The first and second MEMS switches selectively couple the input port to either the first output port or the second output port. The differential input port is separated into two single-ended paths. One single-ended path is switched through the first MEMS switch, and the other single-ended path is switched through the second MEMS switch. The single-ended paths are spatially matched with respect to length and orientation, and are at least partially distributed through at least two layers of electrical conductors, with adjacent layers of electrical conductors separated by electrically insulating layers.
    Type: Application
    Filed: August 8, 2023
    Publication date: February 15, 2024
    Inventors: Xu Zhu, Seung Yang, Jonathan Leitner, Chris Giovanniello
  • Publication number: 20230402510
    Abstract: A semiconductor device includes a substrate including an active pattern, a channel pattern on the active pattern, and a source/drain pattern on a side surface of the channel pattern, the source/drain pattern including a first section between a first level and a second level that is higher than the first level, a first variation section between the second level and a third level that is higher than the second level, and a second section between the third level and a fourth level that is higher than the third level, where a rate of change in germanium concentration in the first variation section in a first direction is greater than a rate of change in germanium concentration in each of the first section and the second section in the first direction, and a germanium concentration at each of the first level and the second level is greater than 0 at % and equal to or less than 10 at %.
    Type: Application
    Filed: January 24, 2023
    Publication date: December 14, 2023
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Namkyu CHO, Jungtaek Kim, Moon Seung Yang, Sumin Yu, Seojin Jeong, Seokhoon Kim, Pankwi Park
  • Patent number: 11710772
    Abstract: A semiconductor device including an insulating layer on a substrate; channel semiconductor patterns stacked on the insulating layer and vertically spaced apart from each other; a gate electrode crossing the channel semiconductor patterns; source/drain regions respectively at both sides of the gate electrode and connected to each other through the channel semiconductor patterns, the source/drain regions having concave bottom surfaces; and air gaps between the insulating layer and the bottom surfaces of the source/drain regions.
    Type: Grant
    Filed: December 23, 2021
    Date of Patent: July 25, 2023
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Eunhye Choi, Seung Mo Kang, Jungtaek Kim, Moon Seung Yang, Jongryeol Yoo
  • Patent number: 11688813
    Abstract: A semiconductor device includes a channel pattern including first and second semiconductor patterns stacked on a substrate, a gate electrode covering top and lateral surfaces of the channel pattern and extending in a first direction, and including a first gate segment between the first semiconductor pattern and the second semiconductor pattern, a gate spacer covering a lateral surface of the gate electrode and including an opening exposing the channel pattern, and a first source/drain pattern on a side of the gate spacer and in contact with the channel pattern through the opening, the first source/drain pattern including a sidewall center thickness at a height of the first gate segment and at a center of the opening, and a sidewall edge thickness at the height of the first gate segment and at an edge of the opening, the sidewall edge thickness being about 0.7 to 1 times the sidewall center thickness.
    Type: Grant
    Filed: January 26, 2022
    Date of Patent: June 27, 2023
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Seung Mo Kang, Moon Seung Yang, Jongryeol Yoo, Sihyung Lee, Sunguk Jang, Eunhye Choi
  • Publication number: 20230133560
    Abstract: Provided is a resin composition including 25 to 50 parts by weight of a phosphorus-based flame retardant composition, with respect to 100 parts by weight of a base resin including a graft copolymer containing a rubber polymer, and a styrene-based copolymer. The phosphorus-based flame retardant composition includes 30 wt % to 70 wt % of Mn+(diethylphosphinate)?n (M is a metal having an oxidation number of 2 to 5, and n is an integer selected from 2 to 5) and 30 wt % to 70 wt % of ammonium polyphosphate.
    Type: Application
    Filed: August 6, 2021
    Publication date: May 4, 2023
    Applicant: LG CHEM, LTD.
    Inventors: Hee Seung YANG, Ki Young NAM, Je Sun YOO, Jae Young SIM, Seon Hyeong BAE
  • Publication number: 20230111579
    Abstract: A semiconductor device includes a substrate that includes an active pattern, a channel pattern disposed on the active pattern, where the channel pattern includes a plurality of semiconductor patterns that are vertically stacked and spaced apart from each other, a source/drain pattern connected to the semiconductor patterns, and a gate electrode disposed on the semiconductor patterns. The gate electrode includes a plurality of portions that are respectively interposed between the semiconductor patterns, and the source/drain pattern includes a buffer layer in contact with the semiconductor patterns and a main layer disposed on the buffer layer. The buffer layer contains silicon germanium (SiGe) and includes a first semiconductor layer and a first reflow layer thereon. A germanium concentration of the first reflow layer is less than that of the first semiconductor layer.
    Type: Application
    Filed: July 26, 2022
    Publication date: April 13, 2023
    Inventors: RYONG HA, SEOKHOON KIM, DOHYUN GO, JUNGTAEK KIM, MOON SEUNG YANG, SANGIL LEE, SEOJIN JEONG
  • Patent number: 11569389
    Abstract: A semiconductor device includes a fin-type pattern on a substrate, the fin-type pattern extending in a first direction and protruding from the substrate in a third direction, a first wire pattern on the fin-type pattern, the first wire pattern being spaced apart from the fin-type pattern in the third direction, and a gate electrode extending in a second direction, which is perpendicular to the first and third directions, and surrounding the first wire pattern, the gate electrode including a first portion that overlaps with the fin-type pattern in the second direction and a second portion corresponding to a remainder of the gate electrode except for the first portion.
    Type: Grant
    Filed: September 9, 2021
    Date of Patent: January 31, 2023
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Moon Seung Yang, Eun Hye Choi, Seung Mo Kang, Yong Seung Kim, Jung Taek Kim, Min-Hee Choi
  • Publication number: 20220355306
    Abstract: The present invention relates to a ceramic cutting teeth-dovetailed cutting device of a cutting-type rice milling machine. In general, a cutting tool is used to cut outer bran of brown rice in a cutting-type rice milling machine. Here, the cutting tool is configured of a combined body in which cutting rings and spacer rings are alternately combined, and the cutting rings have a ring shape with a uniform thickness and have an outer circumference on which gear-shaped trapezoidal cutting teeth are formed to cut outer bran of brown rice by edge portions of the cutting teeth such that white rice is produced. More specifically, the invention relates to a cutting device used in a rice milling machine, the cutting device having a configuration in which a main cutting-device body is dovetailed with cutting teeth.
    Type: Application
    Filed: March 23, 2021
    Publication date: November 10, 2022
    Applicant: SENONGTECH LTD.
    Inventor: Jae Seung YANG
  • Patent number: 11365993
    Abstract: A venturi flowmeter includes a ring of which the inside is hollow and which prevents inner wall abrasion or fatigue load accumulation at a main orifice and thus can reduce maintenance costs. The venturi flowmeter includes a main orifice of which the inside is hollow and an element of which one side has a hollow inside having the same diameter as that of a through-hole of the main orifice, and which has a tapered shape toward the other side thereof. A diffuser has one side having a hollow inside of the same diameter as that of the through-hole of the main orifice, and which has a tapered shape toward the other side thereof. A ring is connected between the main orifice and one side of the element. The ring includes a stopper formed along an inner wall and having a hollow central portion.
    Type: Grant
    Filed: October 29, 2019
    Date of Patent: June 21, 2022
    Assignee: DAE HAN INSTRUMENT CO., LTD
    Inventor: Jung Seung Yang
  • Patent number: 11367865
    Abstract: Disclosed is a method of manufacturing a composite anode material for a lithium secondary battery containing nano-sized silicon and a carbonaceous material through a single process, the method including mixing a carbonaceous material and solid silicon and performing carbothermal shock for rapidly heating the carbonaceous material so that the solid silicon is melted using the heated carbonaceous material and is dispersed and attached in the form of particles to the surface of the carbonaceous material, the size of the silicon particles, which grow on the surface of the carbonaceous material, being adjusted during the carbothermal shock. Accordingly, processing costs can be lower than conventional methods of manufacturing silicon nanoparticles, and manufacturing costs can be further reduced by simultaneously performing formation of the silicon nanoparticles and compounding with the carbonaceous material.
    Type: Grant
    Filed: November 18, 2019
    Date of Patent: June 21, 2022
    Assignee: HPK INC.
    Inventors: Chang Hyun Cho, Chang Se Woo, Kap Seung Yang, Chang Ha Lim, Chung Hyung Joh
  • Patent number: RE49223
    Abstract: The present invention provides a water-soluble fluorescent compound of resveratrone 6-O-?-glucoside [(E)-4-(8-hydroxy-6-(((2S,3R,4S,5S,6R)-3,4,5-trihydroxy-6-(hydroxymethyl)tetrahydro-2H-pyran-2-yl)oxy)naphthalen-2-yl)but-3-en-2-one] and its derivatives of Formula I which have at least one water-soluble substituent, and a method for preparing the same by a photochemical reaction of resveratrol 3-O-?-glucoside and its derivatives of having Formula 3 which are not fluorescent. Said new water-soluble fluorescent compounds has single-photon absorptive characteristics and/or two-photon absorptive characteristics as well as no or little toxicity, and can be usefully utilized in fields that requires water-soluble fluorescent characteristics (diagnosis, fluorescent probe, in vivo imaging, display, etc.).
    Type: Grant
    Filed: April 29, 2020
    Date of Patent: September 27, 2022
    Assignees: SNU R&DB FOUNDATION;, GLOBAL FRONTIER CENTER FOR MULTISCALE ENERGY SYSTEMS
    Inventors: Seong Keun Kim, Il Seung Yang, Seon Jin Hwang, Jung Eun Lee, Jong Woo Lee, Jun Hee Kang, Eun Hak Lim