Patents by Inventor Seung-yeun JEONG

Seung-yeun JEONG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11221953
    Abstract: A memory device includes a memory cell array, an information register and a prefetch circuit. The memory cell array stores a valid data array, a base array and a target data array, where the valid data array includes valid elements among elements of first data, the base array includes position elements indicating position values corresponding to the valid elements and the target data array includes target elements of second data corresponding to the position values. The information register stores indirect memory access information including a start address of the target data array and a unit size of the target elements. The prefetch circuit prefetches, based on the indirect memory access information, the target elements corresponding to the position elements that are read from the memory cell array.
    Type: Grant
    Filed: May 8, 2019
    Date of Patent: January 11, 2022
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: In-Soon Jo, Young-Geun Choi, Seung-Yeun Jeong
  • Patent number: 10817624
    Abstract: A storage device includes a non-volatile memory including a first block, a second block and a block management area that stores an initial data write time and a final data write time for each of the first block and the second block. The storage device also includes a memory controller that determines a creation time and a modification time for first data in response to a permanently delete command identifying the first data, selects at least one of the first block and the second block to be permanently deleted by comparing the initial data write time and the final data write time for each of the first block and the second block with the creation time and the modification time, and permanently deletes the selected at least one of the first block and the second block.
    Type: Grant
    Filed: May 9, 2018
    Date of Patent: October 27, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jin-Hwan Park, Kyung Ho Kim, Min-Chul Kim, Sagar Uttarwar, Yong Gil Song, Min Gon Shin, Sun-Mi Yoo, Hyun Su Jang, Seung Yeun Jeong, Ki Hyun Choi
  • Publication number: 20200110705
    Abstract: A memory device includes a memory cell array, an information register and a prefetch circuit. The memory cell array stores a valid data array, a base array and a target data array, where the valid data array includes valid elements among elements of first data, the base array includes position elements indicating position values corresponding to the valid elements and the target data array includes target elements of second data corresponding to the position values. The information register stores indirect memory access information including a start address of the target data array and a unit size of the target elements. The prefetch circuit prefetches, based on the indirect memory access information, the target elements corresponding to the position elements that are read from the memory cell array.
    Type: Application
    Filed: May 8, 2019
    Publication date: April 9, 2020
    Inventors: IN-SOON JO, Young-Geun Choi, Seung-Yeun Jeong
  • Publication number: 20190130135
    Abstract: A storage device includes a non-volatile memory including a first block, a second block and a block management area that stores an initial data write time and a final data write time for each of the first block and the second block. The storage device also includes a memory controller that determines a creation time and a modification time for first data in response to a permanently delete command identifying the first data, selects at least one of the first block and the second block to be permanently deleted by comparing the initial data write time and the final data write time for each of the first block and the second block with the creation time and the modification time, and permanently deletes the selected at least one of the first block and the second block.
    Type: Application
    Filed: May 9, 2018
    Publication date: May 2, 2019
    Inventors: JIN-HWAN PARK, KYUNG HO KIM, MIN-CHUL KIM, SAGAR UTTARWAR, YONG GIL SONG, MIN GON SHIN, SUN-MI YOO, HYUN SU JANG, SEUNG YEUN JEONG, KI HYUN CHOI
  • Patent number: 9557935
    Abstract: Provided is a method of writing data of a storage system. The method includes causing a host to issue a first writing command; causing the host, when a queue depth of the first writing command is a first value, to store the first writing command in an entry which is assigned in advance and is included in a cache; causing the host to generate a writing completion signal for the first writing command; and causing the host to issue a second writing command.
    Type: Grant
    Filed: July 21, 2014
    Date of Patent: January 31, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Pradeep Bisht, Jiurong Cheng, Jong-tae Park, Sung-chul Kim, Seung-yeun Jeong, Sang-jin Oh, Jung-ho Kim
  • Publication number: 20150095574
    Abstract: Provided is a method of writing data of a storage system. The method includes causing a host to issue a first writing command; causing the host, when a queue depth of the first writing command is a first value, to store the first writing command in an entry which is assigned in advance and is included in a cache; causing the host to generate a writing completion signal for the first writing command; and causing the host to issue a second writing command.
    Type: Application
    Filed: July 21, 2014
    Publication date: April 2, 2015
    Inventors: Pradeep BISHT, Jiurong CHENG, Jong-tae PARK, Sung-chul KIM, Seung-yeun JEONG, Sang-jin OH, Jung-ho KIM