Abstract: The present disclosure relates to a substrate treatment apparatus comprising: a process chamber; a first electrode positioned in the upper part of the process chamber; a second electrode positioned below the first electrode and including a plurality of openings; a plurality of protruding electrodes extending from the first electrode to the plurality of openings of the second electrode; and a substrate support part facing the second electrode and supporting a substrate.

Abstract: The present inventive concept relates to a substrate processing device, comprising: a chamber; a chamber lid that supports the upper portion of the chamber; a susceptor that is installed to face the chamber lid and supports a substrate; a gas ejection unit that ejects a plurality of gases; and an anti-sag bolt that is installed in the chamber lid and can be combined with the gas injection unit, wherein the anti-sag bolt includes a plurality of flow paths through which a plurality of gases can flow.

Abstract: A substrate processing apparatus includes a chamber having a sidewall; a susceptor mounting a substrate inside the chamber, an upper dome covering an upper surface of the chamber and formed of a transparent dielectric material, and an antenna disposed on the upper dome to generate inductively coupled plasma. The antenna includes two one-turn unit antennas, the wo one-turn unit antennas each has an upper surface and a lower surface and are disposed to overlap each other on the upper surfaces and the lower surfaces of the two one-turn unit antennas, the two one-turn unit antennas are connected in parallel and are connected to a radio-frequency (RF) power supply, and a width direction of each of the one-turn unit antennas stands upright vertically.

Abstract: Provided is a substrate processing apparatus. The positions of a first electrode and a second electrode are adjusted in advance in consideration of differences in coefficients of thermal expansion so that a short circuit created by contact between the first electrode and the second electrode is prevented even in the case in which the first electrode and the second electrode are thermally expanded during processing. Even in the case in which the first electrode and the second electrode are thermally expanded due to an increase in temperature during processing, a short circuit between the first electrode and the second electrode can be prevented, and the uniformity of a thin film can be maintained in the substrate processing apparatus for processing a large substrate.

Abstract: An embodiment of a substrate treatment device may comprise: a disk provided to be able to rotate; at least one susceptor arranged on the disk, a substrate being seated on the upper surface of the susceptor, the susceptor rotating, as the disk rotates, and revolving about the center of the disk as the axis; a metal ring coupled to the lower portion of the susceptor and arranged such that the center of the metal ring coincides with the center of the susceptor, and a magnet arranged radially on the lower portion of the disk with reference to the center of the disk and provided such that at least a part of the magnet faces the metal ring in the up/down direction.

Abstract: An embodiment of a substrate treatment device may comprise: a disk provided to be able to rotate; at least one susceptor arranged on the disk, a substrate being seated on the upper surface of the susceptor, the susceptor rotating, as the disk rotates, and revolving about the center of the disk as the axis; a metal ring coupled to the lower portion of the susceptor and arranged such that the center of the metal ring coincides with the center of the susceptor, and a magnet arranged radially on the lower portion of the disk with reference to the center of the disk and provided such that at least a part of the magnet faces the metal ring in the up/down direction.

Abstract: Disclosed is a substrate processing apparatus including a disc provided so as to be rotatable on its axis, at least one susceptor disposed on the disc such that a substrate is seated on an upper surface thereof, the susceptor being configured to rotate on its axis and to revolve around a center of the disc as the disc rotates on its axis, a metal ring coupled to a lower portion of the susceptor, the metal ring being arranged such that a center thereof coincides with a center of the susceptor, and a magnet provided below the disc so as to be radially arranged on a basis of the center of the disc, at least a portion of the magnet being opposite the metal ring in a vertical direction.

Abstract: Disclosed is a substrate processing apparatus including a disc provided so as to be rotatable on its axis, at least one susceptor disposed on the disc such that a substrate is seated on an upper surface thereof, the susceptor being configured to rotate on its axis and to revolve around a center of the disc as the disc rotates on its axis, a metal ring coupled to a lower portion of the susceptor, the metal ring being arranged such that a center thereof coincides with a center of the susceptor, and a magnet provided below the disc so as to be radially arranged on a basis of the center of the disc, at least a portion of the magnet being opposite the metal ring in a vertical direction.