Abstract: Example embodiments relate to an apparatus for drying a substrate. The apparatus may include a housing including first barrier walls having a first height, a rotary chuck that is disposed within the housing and configured to rotate the substrate, a nozzle system that is disposed above the rotary chuck and configured to supply a fluid onto the substrate, a cleaning liquid supply unit supplying a cleaning liquid for cleaning the substrate to the nozzle system, and a drying liquid supply unit supplying a drying liquid for drying the substrate to the nozzle system.

Abstract: In a method of processing a semiconductor structure and a method of forming a capacitor for a semiconductor device using the same, a semiconductor structure may be cleaned using a cleaning solution having a surface tension lower than that of water. The semiconductor structure may be dried in an isopropyl alcohol vapor atmosphere.