Abstract: A photoresist composition includes an organometallic compound including at least one metal-ligand bond and having an absorbance to first light, the at least one metal-ligand bond including a metal core and at least one organic ligand bonded to the metal core, a photosensitive additive having an absorbance to second light having a longer wavelength than the first light, and a solvent. A method of manufacturing an integrated circuit device includes forming a photoresist film on a substrate based on using the photoresist composition, exposing a first area of the photoresist film to the first light, exposing an entire area of the photoresist film to the second light, and forming a network of metal structures in the first area based on baking the photoresist film.

Abstract: A method of forming fine patterns includes forming a mask on an etching target, forming an anti-reflective layer on the mask, forming fixing patterns such that top surfaces of the anti-reflective layer and fixing patterns are exposed, forming a block copolymer layer including first and second polymer blocks, and phase-separating the block copolymer layer to form first patterns and second patterns on the anti-reflective layer and the fixing patterns. The first and second patterns include the first and second polymer blocks, respectively. The anti-reflective layer has a neutral, i.e., non-selective, interfacial energy with respect to the first and second polymer blocks. The fixing patterns have a higher interfacial energy with respect to the first polymer block than the second polymer block.

Abstract: A block copolymer includes a first polymer block and a second polymer block having different structures, and one of the first polymer block and the second polymer block has a halogen-substituted structure.

Abstract: A method of forming fine patterns includes forming a mask on an etching target, forming an anti-reflective layer on the mask, forming fixing patterns such that top surfaces of the anti-reflective layer and fixing patterns are exposed, forming a block copolymer layer including first and second polymer blocks, and phase-separating the block copolymer layer to form first patterns and second patterns on the anti-reflective layer and the fixing patterns. The first and second patterns include the first and second polymer blocks, respectively. The anti-reflective layer has a neutral, i.e., non-selective, interfacial energy with respect to the first and second polymer blocks. The fixing patterns have a higher interfacial energy with respect to the first polymer block than the second polymer block.

Abstract: A block copolymer includes a first polymer block and a second polymer block having different structures, and one of the first polymer block and the second polymer block has a halogen-substituted structure.

Abstract: A method for forming patterns of a semiconductor device includes forming a block copolymer layer on an underlying layer, the underlying layer including a first block copolymer having first and second polymer blocks; phase-separating the block copolymer layer to form first block portions including the first polymer block and a second block portion surrounding the first block portions and including the second polymer block; removing the first block portions to form first openings; forming block copolymer pillars to fill the first openings, the block copolymer pillars including a second block copolymer having third and fourth polymer blocks; phase-separating the block copolymer pillars to form third block portions including the third polymer block and fourth block portions including the fourth polymer block within the first openings; and removing the third block portions to form second openings.