Abstract: An integrated circuit semiconductor device includes a substrate having a first surface and a second surface opposite the first surface; a rail through via passing between the first surface and the second surface of the substrate; a cell-level portion arranged on the first surface and comprising a buried rail connected to the rail through via, a local conductive interconnect, a cell via connected to the local conductive interconnect, and a transistor connected to the local conductive interconnect; a signal wiring-level portion arranged on the cell-level portion and comprising a plurality of upper multi-layer interconnect layers connected to the local conductive interconnect via the cell via and upper vias connecting the upper multi-layer interconnect layers to each other; a dummy substrate arranged on the signal wiring-level portion; a bonding-level portion arranged between the signal wiring-level portion and the dummy substrate and bonding the signal wiring-level portion to the dummy substrate, and comprising

Abstract: A semiconductor package may include a first package including a first substrate, a first semiconductor chip mounted on the first substrate, and a second substrate on the first semiconductor chip, the first package having a center region, a first edge region surrounding the center region, and a second edge region surrounding the first edge region in a plan view, dummy balls disposed on the center region and the second edge region of the first package, connection terminals disposed on the first edge region of the first package, and a second package including a third substrate disposed on the dummy balls and the connection terminals and a second semiconductor chip mounted on the third substrate. The dummy balls may be in contact with the second substrate and may be spaced apart from the third substrate, and the connection terminals may be coupled to the second and third substrates.

Abstract: An integrated circuit semiconductor device includes a substrate having a first surface and a second surface opposite the first surface; a rail through via passing between the first surface and the second surface of the substrate; a cell-level portion arranged on the first surface and comprising a buried rail connected to the rail through via, a local conductive interconnect, a cell via connected to the local conductive interconnect, and a transistor connected to the local conductive interconnect; a signal wiring-level portion arranged on the cell-level portion and comprising a plurality of upper multi-layer interconnect layers connected to the local conductive interconnect via the cell via and upper vias connecting the upper multi-layer interconnect layers to each other; a dummy substrate arranged on the signal wiring-level portion; a bonding-level portion arranged between the signal wiring-level portion and the dummy substrate and bonding the signal wiring-level portion to the dummy substrate, and comprising

Abstract: A method of manufacturing a thermal interface material may include mixing fine particles with an acidic solution to remove a first oxide layer from a surface of each of the fine particles, injecting a liquid metal into the acidic solution to remove a second oxide layer from a surface of the liquid metal and for the fine particles from which the first oxide layer is removed in the acidic solution to penetrate into the liquid metal from which the second oxide layer is remove, and extracting the liquid metal including the fine particles therein from the acidic solution.

Abstract: A semiconductor package may include a package substrate, a semiconductor chip on the package substrate, a heat dissipation member on the semiconductor chip, and a first thermal interface material coated on an upper surface of the semiconductor chip to bond the semiconductor chip and the heat dissipation member. The first thermal interface material may include a liquid metal and fine particles disposed inside the liquid metal. The fine particles may have no oxide layer on a surface thereof. A volume percentage of the fine particles in the liquid metal including the fine particles therein may be about 1% to about 5%. A thermal conductivity of the liquid metal including the fine particles therein may be equal to or more than about 40 W/m·K.

Abstract: A semiconductor package comprising a main semiconductor chip having a first thickness, at least one semiconductor device on one side of the main semiconductor chip and having a second thickness less than the first thickness, a first molding layer that covers the main semiconductor chip and the semiconductor device so as to expose a top surface of the semiconductor device and to expose a top surface and a portion of a lateral surface of the main semiconductor chip, a first redistribution substrate below the first molding layer, a second redistribution substrate on the first molding layer, and a mold via that penetrates the first molding layer and connects the first redistribution substrate to the second redistribution substrate.

Abstract: A film package, includes: a film substrate having first and second surfaces opposing each other; a plurality of wiring patterns respectively including an input pattern, an output pattern, and an interconnection pattern; a first semiconductor chip electrically connected to the input pattern and the interconnection pattern; a second semiconductor chip electrically connected to the interconnection pattern and the output pattern; a protective layer on the first surface to cover at least a portion of the plurality of wiring patterns; a first conductive film on the protective layer and extending in a second direction; and a second conductive film on the second surface to overlap the first conductive film in a third direction.

Abstract: A semiconductor package includes; a package substrate, an interposer disposed on the package substrate, semiconductor chips mounted on the interposer, a molding member on the interposer and surrounding the semiconductor chips, a first sealing member on the molding member, and a heat dissipation member on the package substrate and covering the interposer, the semiconductor chips, and the first sealing member, wherein the heat dissipation member includes a lower structure contacting an upper surface of the package substrate, and an upper structure on the lower structure, extending over the first sealing member, and including a microchannel and a micropillar on the microchannel.

Abstract: A semiconductor package is provided. The semiconductor package includes first and second semiconductor chips mounted on an interposer structure, an insulating filler covering sides of the first and second semiconductor chips, a first thermal interface material (TIM) layer arranged on the insulating filler, and second TIM layers arranged on the first and second semiconductor chips. The thermal conductivity of each of the second TIM layers is higher than that of the first TIM layer and the first TIM layer is between the second TIM layers.

Abstract: An integrated circuit semiconductor device includes a substrate having a first surface and a second surface opposite the first surface; a rail through via passing between the first surface and the second surface of the substrate; a cell-level portion arranged on the first surface and comprising a buried rail connected to the rail through via, a local conductive interconnect, a cell via connected to the local conductive interconnect, and a transistor connected to the local conductive interconnect; a signal wiring-level portion arranged on the cell-level portion and comprising a plurality of upper multi-layer interconnect layers connected to the local conductive interconnect via the cell via and upper vias connecting the upper multi-layer interconnect layers to each other; a dummy substrate arranged on the signal wiring-level portion; a bonding-level portion arranged between the signal wiring-level portion and the dummy substrate and bonding the signal wiring-level portion to the dummy substrate, and comprising

Abstract: A method of manufacturing a thermal interface material may include mixing fine particles with an acidic solution to remove a first oxide layer from a surface of each of the fine particles, injecting a liquid metal into the acidic solution to remove a second oxide layer from a surface of the liquid metal and for the fine particles from which the first oxide layer is removed in the acidic solution to penetrate into the liquid metal from which the second oxide layer is remove, and extracting the liquid metal including the fine particles therein from the acidic solution.