Abstract: A semiconductor device and a method of manufacturing the same. The semiconductor device has a substrate in which recess regions are formed and semiconductor regions acting as a source region or a drain region is defined between the recess regions; a gate insulating layer disposed on an inner surface of each recess region; a recess gate disposed on the gate insulating layer in each recess region; an insulating capping layer disposed above the recess gate in each recess region; a metallic insertion layer disposed between a side surface of the recess gate and a side surface of the insulating capping layer and facing with a side surface of the source region or the drain region; and an intermediate insulating layer disposed between the metallic insertion layer and the recess gate to electrically insulate the metallic insertion layer from the recess gate.

Abstract: A variable resistance memory device includes a plurality of memory cells arranged on a substrate. Each of the memory cells includes a selection element pattern and a variable resistance pattern stacked on the substrate. The selection element pattern includes a first selection element pattern having a chalcogenide material and a second selection element pattern having a metal oxide and coupled to the first selection element pattern.

Abstract: A switching element includes a lower barrier electrode on a substrate, a switching pattern on the lower barrier electrode, and an upper barrier electrode on the switching pattern. The lower barrier electrode includes a first lower barrier electrode layer, and a second lower barrier electrode layer interposed between the first lower barrier electrode layer and the switching pattern and whose density is different from the density of the first lower barrier electrode.

Abstract: A switching element includes a lower barrier electrode disposed on a substrate, a switching pattern disposed on the lower barrier electrode, and an upper barrier electrode disposed on the switching pattern. The switching pattern includes a first switching pattern, and a second switching pattern disposed on the first switching pattern and having a density different from a density of the first switching pattern.

Abstract: A variable resistance memory device includes a plurality of memory cells arranged on a substrate. Each of the memory cells includes a selection element pattern and a variable resistance pattern stacked on the substrate. The selection element pattern includes a first selection element pattern having a chalcogenide material and a second selection element pattern having a metal oxide and coupled to the first selection element pattern.

Abstract: A switching element includes a lower barrier electrode on a substrate, a switching pattern on the lower barrier electrode, and an upper barrier electrode on the switching pattern. The lower barrier electrode includes a first lower barrier electrode layer, and a second lower barrier electrode layer interposed between the first lower barrier electrode layer and the switching pattern and whose density is different from the density of the first lower barrier electrode.

Abstract: A switching element includes a lower barrier electrode on a substrate, a switching pattern on the lower barrier electrode, and an upper barrier electrode on the switching pattern. The lower barrier electrode includes a first lower barrier electrode layer, and a second lower barrier electrode layer interposed between the first lower barrier electrode layer and the switching pattern and whose density is different from the density of the first lower barrier electrode.

Abstract: A method for producing porous graphite capable of realizing higher durability, output and capacity, and porous graphite. A carbon member having microvoids is obtained by a dealloying step for selectively eluting other non-carbon main components into a metal bath by immersing a carbon-containing material, composed of a compound including carbon or an alloy or non-equilibrium alloy, in the metal bath, wherein the metal bath has a solidifying point lower than the melting point of the carbon-containing material, and is controlled to a temperature lower than the minimum value of a liquidus temperature within a composition fluctuation range extending from the carbon-containing material to carbon by reducing the other non-carbon main components. The carbon member obtained in the dealloying step is graphitized by heating in a graphitization step. The carbon member graphitized in the graphitization step is subjected to activation treatment by an activation step.

Abstract: A switching element includes a lower barrier electrode disposed on a substrate, a switching pattern disposed on the lower barrier electrode, and an upper barrier electrode disposed on the switching pattern. The switching pattern includes a first switching pattern, and a second switching pattern disposed on the first switching pattern and having a density different from a density of the first switching pattern.

Abstract: A switching element includes a lower barrier electrode on a substrate, a switching pattern on the lower barrier electrode, and an upper barrier electrode on the switching pattern. The lower barrier electrode includes a first lower barrier electrode layer, and a second lower barrier electrode layer interposed between the first lower barrier electrode layer and the switching pattern and whose density is different from the density of the first lower barrier electrode.

Abstract: A method for producing porous graphite capable of realizing higher durability, output and capacity, and porous graphite. A carbon member having microvoids is obtained by a dealloying step for selectively eluting other non-carbon main components into a metal bath by immersing a carbon-containing material, composed of a compound including carbon or an alloy or non-equilibrium alloy, in the metal bath, wherein the metal bath has a solidifying point lower than the melting point of the carbon-containing material, and is controlled to a temperature lower than the minimum value of a liquidus temperature within a composition fluctuation range extending from the carbon-containing material to carbon by reducing the other non-carbon main components. The carbon member obtained in the dealloying step is graphitized by heating in a graphitization step. The carbon member graphitized in the graphitization step is subjected to activation treatment by an activation step.

Abstract: A method for producing porous graphite capable of realizing higher durability, output and capacity, and porous graphite. A carbon member having microvoids is obtained by a dealloying step for selectively eluting other non-carbon main components into a metal bath by immersing a carbon-containing material, composed of a compound including carbon or an alloy or non-equilibrium alloy, in the metal bath, wherein the metal bath has a solidifying point lower than the melting point of the carbon-containing material, and is controlled to a temperature lower than the minimum value of a liquidus temperature within a composition fluctuation range extending from the carbon-containing material to carbon by reducing the other non-carbon main components. The carbon member obtained in the dealloying step is graphitized by heating in a graphitization step. The carbon member graphitized in the graphitization step is subjected to activation treatment by an activation step.

Abstract: A method for producing porous graphite capable of realizing higher durability, output and capacity, and porous graphite. A carbon member having microvoids is obtained by a dealloying step for selectively eluting other non-carbon main components into a metal bath by immersing a carbon-containing material, composed of a compound including carbon or an alloy or non-equilibrium alloy, in the metal bath, wherein the metal bath has a solidifying point lower than the melting point of the carbon-containing material, and is controlled to a temperature lower than the minimum value of a liquidus temperature within a composition fluctuation range extending from the carbon-containing material to carbon by reducing the other non-carbon main components. The carbon member obtained in the dealloying step is graphitized by heating in a graphitization step. The carbon member graphitized in the graphitization step is subjected to activation treatment by an activation step.