Patents by Inventor Seung-Han Baek

Seung-Han Baek has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230120474
    Abstract: A plasma etching apparatus may include a first source electrode, a first bias electrode, and a second bias electrode configured to generate a plasma by supplying energy to a process gas injected into a chamber; and a controller. The controller may be configured to supply a first high-frequency RF power, a first low-frequency RF power, and a second low-frequency RF power to the chamber during a first period from a first time to a second time; ramp down and turn off the first high-frequency RF power to the chamber during a second period from the second time to a third time; and ramp down and turn off the first low-frequency RF power to the chamber during a third period from the second time to a fourth time different from the third time. The third period may be smaller than ½ of the first period and greater than the second period.
    Type: Application
    Filed: May 23, 2022
    Publication date: April 20, 2023
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Nam Kyun KIM, Seung Bo SHIM, Doug Yong SUNG, Seung Han BAEK, Ju Ho LEE
  • Patent number: 7847395
    Abstract: A package and a package assembly for a power device having a high operation voltage and impulse voltage are provided. The package assembly for a power device comprises an assembly wherein the power device is encapsulated and electrically connected to a lead protruding outside the package, and an isolation spacer filling a clearance distance between the package and a heat sink attached to the package.
    Type: Grant
    Filed: February 28, 2007
    Date of Patent: December 7, 2010
    Assignee: Fairchild Korea Semiconductor, Ltd.
    Inventors: Seung-han Baek, Seung-won Lim
  • Publication number: 20070205503
    Abstract: A package and a package assembly for a power device having a high operation voltage and impulse voltage are provided. The package assembly for a power device comprises an assembly wherein the power device is encapsulated and electrically connected to a lead protruding outside the package, and an isolation spacer filling a clearance distance between the package and a heat sink attached to the package.
    Type: Application
    Filed: February 28, 2007
    Publication date: September 6, 2007
    Applicant: Fairchild Korea Semiconductor, Ltd.
    Inventors: Seung-han Baek, Seung-won Lim
  • Patent number: 5634990
    Abstract: An Fe-Mn vibration damping alloy steel having a mixture structure of .epsilon., .alpha.' and .gamma.. The alloy steel consists of iron, manganese from 10 to 24% by weight and limited amounts of impurities. The alloy steel is manufactured by preparing an ingot at a temperature of 1000.degree. C. to 1300.degree. C. for 12 to 40 hours to homogenize the ingot and hot-rolling the homogenized ingot to produce a rolled alloy bar or plate, performing solid solution treatment on the alloy steel at 900.degree. C. to 1100.degree. C. for 30 to 60 minutes, cooling the alloy steel by air or water, and cold rolling the alloy steel at a reduction rate of greater than 0% and below 30% at around room temperature.
    Type: Grant
    Filed: August 25, 1995
    Date of Patent: June 3, 1997
    Assignee: Woojin Osk Corporation
    Inventors: Chong-Sool Choi, Man-Eob Lee, Seung-Han Baek, Yong-Chul Son, Jeong-Cheol Kim, Joong-Hwan Jun, Young-Sam Ko
  • Patent number: 5290372
    Abstract: A vibration damping alloy has a mixed structure of martensite and austenite. The alloy steel is iron-based to which 14-22% by weight of manganese is added. The vibration damping alloy is manufactured by mixing electrolytic iron and manganese in a molten state. The molten mixture, containing 14-22% of manganese with the remainder of iron, is cast as an ingot. The ingot is homogenized at 1000.degree.-1300.degree. C. for 20-40 hours and then hot rolled at 900.degree.-1100.degree. C. for 20 minutes to 90 minutes. The ingot is cooled with air or water.
    Type: Grant
    Filed: October 19, 1992
    Date of Patent: March 1, 1994
    Assignee: Woojin Osk Corporation
    Inventors: Jong-Sul Choi, Seung-Han Baek, Jun-Dong Kim