Abstract: A display apparatus includes a substrate including a transmission area having a first through hole, a display area surrounding the transmission area, and a middle area disposed between the transmission area and the display area, a pixel circuit disposed on the display area, the pixel circuit including a first thin film transistor including a first semiconductor layer having polycrystalline silicon, and a second thin film transistor including a second semiconductor layer including an oxide semiconductor, a display element including a pixel electrode electrically connected to the pixel circuit, an opposite electrode disposed on the pixel electrode, and an intermediate layer disposed between the pixel electrode and the opposite electrode and including an emission layer, and a groove disposed in the middle area while surrounding the first through hole.

Abstract: Provided are a semiconductor device and a method of fabricating the same. The semiconductor device includes, a gate structure having a gate dielectric layer, a gate electrode, and a spacer, which are each formed on a substrate, a first impurity area formed in a portion of the substrate located below the spacer, a second impurity area in contact with a sidewall of the first impurity area and formed in the substrate on both sides of the gate structure, and a dielectric pattern in contact with a portion of the first impurity area and formed on a sidewall of the second impurity area. At this time, the second impurity area may include an upper part with an upward-narrowing width and a lower part with a downward-narrowing width.