Abstract: A communication apparatus for a vehicle according to an embodiment and a control method therefor are disclosed. The communication apparatus for a vehicle comprises: an antenna unit including a first antenna and a plurality of second antennas; a first switch for switching a first path to the first antenna and a second path to each of the plurality of second antennas; a second switch for switching a second path to any one of the plurality of second antennas; a length adjustment unit that is connected to the second path to the one second antenna connected to the second switch and adjusts the resonance length of the connected second antenna; and a communication control unit that generates a switching signal for connection to any one of the plurality of second antennas according to the state of the first antenna.

Abstract: A method of manufacturing an electronic device according to the present invention, comprises: preparing a substrate; forming an n-type semiconductor including a III-V compound semiconductor or a II-VI compound semiconductor material on the substrate; forming a metal thin film including at least one of copper (Cu), silver (Ag), gold (Au), titanium (Ti), and nickel (Ni) on the n-type semiconductor; and forming a p-type semiconductor on the n-type semiconductor by iodinizing the metal thin film using any one of liquid iodine (I), solid iodine (I), and gas iodine (I). Therefore, it is possible to overcome the limitation of the light emission efficiency of the p-type semiconductor by providing a hybrid type electronic device and a manufacturing method.

Abstract: A solar cell that capable of improving light utilization efficiency is disclosed. The solar cell comprises I-VII compound photovoltaic layer, silicon photovoltaic layer, first electrode and second electrode. The I-VII compound photovoltaic layer comprises first and second type I-VII compound layers. The first and second type I-VII compound layer have first and second type impurities, respectively. The second type I-VII compound layer is disposed under the first type I-VII compound layer. The silicon photovoltaic layer comprises first and second type silicon layers. The first and second type silicon layers have first and second type dopants, respectively. The first type and second type silicon layers are disposed under the second type I-VII compound layer and the first type silicon layer, respectively. The first and second electrodes are formed under the second type silicon layer and on a portion of the first type I-VII compound layer, respectively.

Abstract: A solar cell that capable of improving light utilization efficiency is disclosed. The solar cell comprises I-VII compound photovoltaic layer, silicon photovoltaic layer, first electrode and second electrode. The I-VII compound photovoltaic layer comprises first and second type I-VII compound layers. The first and second type I-VII compound layer have first and second type impurities, respectively. The second type I-VII compound layer is disposed under the first type I-VII compound layer. The silicon photovoltaic layer comprises first and second type silicon layers. The first and second type silicon layers have first and second type dopants, respectively. The first type and second type silicon layers are disposed under the second type I-VII compound layer and the first type silicon layer, respectively. The first and second electrodes are formed under the second type silicon layer and on a portion of the first type I-VII compound layer, respectively.

Abstract: The present invention provides a semiconductor light emitting device including a substrate, a first semiconductor layer, a first cladding layer, an active layer, a second cladding layer and a second semiconductor layer, and a manufacturing method. The first semiconductor layer may be an n-type semiconductor including a III-V semiconductor or a II-VI semiconductor. The second semiconductor layer may be a p-type semiconductor including a I-VII semiconductor. The semiconductor light emitting device may further include a third cladding layer between the active layer and the second cladding layer, the third cladding layer including a III-V semiconductor or a II-VI semiconductor. Therefore, by providing the hybrid type semiconductor light emitting device and the manufacturing method thereof, the luminous efficiency limit of the p-type semiconductor can be overcome.

Abstract: The present invention provides a semiconductor light emitting device including a substrate, a first semiconductor layer, a first cladding layer, an active layer, a second cladding layer and a second semiconductor layer, and a manufacturing method. The first semiconductor layer may be an n-type semiconductor including a III-V semiconductor or a II-VI semiconductor. The second semiconductor layer may be a p-type semiconductor including a I-VII semiconductor. The semiconductor light emitting device may further include a third cladding layer between the active layer and the second cladding layer, the third cladding layer including a III-V semiconductor or a II-VI semiconductor. Therefore, by providing the hybrid type semiconductor light emitting device and the manufacturing method thereof, the luminous efficiency limit of the p-type semiconductor can be overcome.

Abstract: A method of manufacturing an electronic device according to the present invention, comprises: preparing a substrate; forming an n-type semiconductor including a III-V compound semiconductor or a II-VI compound semiconductor material on the substrate; forming a metal thin film including at least one of copper (Cu), silver (Ag), gold (Au), titanium (Ti), and nickel (Ni) on the n-type semiconductor; and forming a p-type semiconductor on the n-type semiconductor by iodinizing the metal thin film using any one of liquid iodine (I), solid iodine (I), and gas iodine (I). Therefore, it is possible to overcome the limitation of the light emission efficiency of the p-type semiconductor by providing a hybrid type electronic device and a manufacturing method.

Abstract: The present invention relates to a quantum dot light emitting device, a light emitting device package, and a backlight unit including a quantum dot nanostructure composed of I-VII compounds. The quantum dot light emitting device included first and second electrodes, a light emitting layer including the quantum dot nanostructure, a hole injection layer, a hole transport layer, an electron injection layer and an electron transport layer. The light emitting device package includes a housing, a light emitting device and a light converter, and the light emitting device is disposed in the housing. The light converter is disposed on the light emitting device, and the quantum dot nanostructure may be dispersed therein. The backlight unit includes a light source having the quantum dot light emitting device or the light emitting device package, and a light guide plate uniformly dispersing the direction of light emitted from the light source.

Abstract: A high output and high speed electronic device having low cost and high productivity is disclosed. The copper halide semiconductor based electronic device, includes a substrate, a copper halide channel layer formed on the substrate, an insulating layer formed on the copper halide channel layer, a gate electrode formed on the insulating layer, a first n+copper halide layer formed on the copper halide channel layer to be disposed at a first side of the gate electrode, the first n+copper halide layer comprising n-type impurities, a drain electrode formed on the first n+copper halide layer, a second n+copper halide layer formed on the copper halide channel layer to be disposed at a second side of the gate electrode, which is opposite to the first side, the second n+copper halide layer comprising n-type impurities, and a source electrode formed on the second n+copper halide layer.

Abstract: A solar cell that capable of improving light utilization efficiency is disclosed. The solar cell comprises I-VII compound photovoltaic layer, silicon photovoltaic layer, first electrode and second electrode. The I-VII compound photovoltaic layer comprises first and second type I-VII compound layers. The first and second type I-VII compound layer have first and second type impurities, respectively. The second type I-VII compound layer is disposed under the first type I-VII compound layer. The silicon photovoltaic layer comprises first and second type silicon layers. The first and second type silicon layers have first and second type dopants, respectively. The first type and second type silicon layers are disposed under the second type I-VII compound layer and the first type silicon layer, respectively. The first and second electrodes are formed under the second type silicon layer and on a portion of the first type I-VII compound layer, respectively.

Abstract: The present invention provides a semiconductor light emitting device including a substrate, a first semiconductor layer, a first cladding layer, an active layer, a second cladding layer and a second semiconductor layer, and a manufacturing method. The first semiconductor layer may be an n-type semiconductor including a III-V semiconductor or a II-VI semiconductor. The second semiconductor layer may be a p-type semiconductor including a I-VII semiconductor. The semiconductor light emitting device may further include a third cladding layer between the active layer and the second cladding layer, the third cladding layer including a III-V semiconductor or a II-VI semiconductor. Therefore, by providing the hybrid type semiconductor light emitting device and the manufacturing method thereof, the luminous efficiency limit of the p-type semiconductor can be overcome.

Abstract: A high output and high speed electronic device having low cost and high productivity is disclosed. The copper halide semiconductor based electronic device, includes a substrate, a copper halide channel layer formed on the substrate, an insulating layer formed on the copper halide channel layer, a gate electrode formed on the insulating layer, a first n+copper halide layer formed on the copper halide channel layer to be disposed at a first side of the gate electrode, the first n+copper halide layer comprising n-type impurities, a drain electrode formed on the first n+copper halide layer, a second n+copper halide layer formed on the copper halide channel layer to be disposed at a second side of the gate electrode, which is opposite to the first side, the second n+copper halide layer comprising n-type impurities, and a source electrode formed on the second n+copper halide layer.

Abstract: A trasparent PN junction device and an electronic device using the PN junction device are provided. The PN junction device to achieve above objects of the invention includes a support substrate, a capper chloride (CuCl) thin film layer, a transparent electrode layer, a first electrode and a second electrode. The capper chloride thin film layer is formed on the supporting substrate and operates as a P-type semiconductor layer. The transparent electrode layer is formed on the capper chloride thin film layer and operates as an N-type semiconductor layer. The first electrode is formed on the capper chloride thin film layer. The second electrode is formed on the transparent electrode layer. Further, the transparent electrode layer may include indium tin oxide (ITO) or indium zinc oxide (IZO).

Abstract: An oil pump system of a hybrid vehicle may include an electric oil pump which supplies operating hydraulic pressure to the transmission based on a speed command; a data detector which detects data for controlling the electric oil pump; and a controller which sets a driving mode of the electric oil pump based on the data detected by the data detector, determines a basic flow rate of the set driving mode, determines a final flow rate by compensating for the basic flow rate, and applies the speed command to the electric oil pump, in which the operating hydraulic pressure is supplied to the transmission only by the electric oil pump, and the speed command is determined based on target hydraulic pressure, an oil temperature, and the final flow rate.

Abstract: An oil pump system of a hybrid vehicle may include an electric oil pump which supplies operating hydraulic pressure to the transmission based on a speed command; a data detector which detects data for controlling the electric oil pump; and a controller which sets a driving mode of the electric oil pump based on the data detected by the data detector, determines a basic flow rate of the set driving mode, determines a final flow rate by compensating for the basic flow rate, and applies the speed command to the electric oil pump, in which the operating hydraulic pressure is supplied to the transmission only by the electric oil pump, and the speed command is determined based on target hydraulic pressure, an oil temperature, and the final flow rate.

Abstract: A mobile terminal and controlling method thereof are disclosed, which facilitates a terminal to be used in further consideration of user's convenience. According to at least one of embodiments of the present invention, while a first function is being executed in a mobile terminal, if a second function different from the first function is executed, a first function icon having execution progress status information of the first function at a timing point of stopping the execution of the first function can be generated. If the first function is re-executed by selecting the first function icon later, it is advantageous in that the first function can be executed in a manner of being continuous with an execution progress status at the execution stop timing point.

Abstract: A mobile terminal and a method for controlling operation of the same are provided. A command input key including a command or an icon, which allows the user to input a command to execute an application to the mobile terminal, is displayed on the mobile terminal. The user may input a command to execute at least two applications to the mobile terminal through one command input key. The display state of the command input key is changed according to the pressure or duration of operation of the command input key. Through the changed display state of the command input key, the user can know which type of application is executed in response to operation of the command input key.

Abstract: The present invention relates to an oil pump control apparatus of a hybrid vehicle that controls an oil pump according to a demand of an output torque and oil temperature, and a method thereof. A oil pump control method includes controlling hydraulic line pressure by operating a oil pump at a maximum power if a starting demand for a hybrid vehicle is detected, calculating a viscosity to correspond to an oil temperature in an engine stop mode and controlling a rotation speed of the oil pump at a low power, and calculating a viscosity according to a variation of a line pressure in a driving mode and controlling the rotation speed of the electric oil pump in either a low power, a middle power, and a high power state.

Abstract: A semiconductor light emitting device including a substrate including a plurality of discrete and separated protruding reflective patterns protruding from the substrate and including a valley; a first semiconductor layer on the substrate and covering the reflective patterns; a gap formed in the valley of a corresponding reflective pattern between the substrate and the first semiconductor layer; an active layer on the first semiconductor layer; and a second semiconductor layer on the active layer.

Abstract: A mobile terminal and controlling method thereof are disclosed, by which a terminal user is facilitated to use a specific function of a mobile terminal in a locked state to prevent an incorrect touch input to a touchscreen provided to the mobile terminal. The present invention includes entering a terminal locked state, displaying a standby image on a touchscreen by image blurring, releasing the locked state if a prescribed touch gesture is performed on the touchscreen, and displaying the standby image by image deblurring.