Patents by Inventor Seung Il Yang

Seung Il Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11967614
    Abstract: Provided is a semiconductor device comprising an active region on a substrate and including first and second sidewalls extending in a first direction and an epitaxial pattern on the active region, wherein the epitaxial pattern includes first and second epitaxial sidewalls extending from the first and second sidewalls, respectively, the first epitaxial sidewall includes a first epitaxial lower sidewall, a first epitaxial upper sidewall, and a first epitaxial connecting sidewall connecting the first epitaxial lower sidewall and the first epitaxial upper sidewall, the second epitaxial sidewall includes a second epitaxial lower sidewall, a second epitaxial upper sidewall, and a second epitaxial connecting sidewall connecting the second epitaxial lower sidewall and the second epitaxial upper sidewall, a distance between the first and second epitaxial upper sidewalls decreases away from the active region, and the first and second epitaxial lower sidewalls extend in parallel to a top surface of the substrate.
    Type: Grant
    Filed: April 7, 2022
    Date of Patent: April 23, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jung Gil Yang, Seung Min Song, Soo Jin Jeong, Dong Il Bae, Bong Seok Suh
  • Patent number: 11923456
    Abstract: A semiconductor device includes channels, a gate structure, and a source/drain layer. The channels are disposed at a plurality of levels, respectively, and spaced apart from each other in a vertical direction on an upper surface of a substrate. The gate structure is disposed on the substrate, at least partially surrounds a surface of each of the channels, and extends in a first direction substantially parallel to the upper surface of the substrate. The source/drain layer is disposed at each of opposite sides of the gate structure in a second direction substantially parallel to the upper surface of the substrate and substantially perpendicular to the first direction and is connected to sidewalls of the channels. A length of the gate structure in the second direction changes along the first direction at a first height from the upper surface of the substrate in the vertical direction.
    Type: Grant
    Filed: April 18, 2022
    Date of Patent: March 5, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jung-Gil Yang, Beom-Jin Park, Seung-Min Song, Geum-Jong Bae, Dong-Il Bae
  • Patent number: 11915853
    Abstract: A coil component is provided. The coil component includes a body having fifth and sixth surfaces opposing each other, first and second surfaces respectively connecting the fifth and sixth surfaces of the body and opposing each other, and third and fourth surfaces respectively connecting the first and second surfaces of the body and opposing each other in one direction, a recess disposed in an edge between one of the first and second surfaces of the body and the sixth surface of the body, a coil portion disposed inside the body and exposed through the recess, and an external electrode including a connection portion disposed in the recess and connected to the coil portion, and a pad portion disposed on one surface of the body. A length of the pad portion in the one direction is greater than a length of the connection portion in the one direction.
    Type: Grant
    Filed: November 6, 2020
    Date of Patent: February 27, 2024
    Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Seung Mo Lim, Seung Min Lee, Byeong Cheol Moon, Yong Hui Li, Byung Soo Kang, Ju Hwan Yang, Tai Yon Cho, No Il Park, Tae Jun Choi
  • Patent number: 7333927
    Abstract: The method for retrieving a similar sentence to a source sentence inputted by a user through a translation memory in a translation aid system is provided. An inverted file of an index word and a translation memory from a parallel corpus are constituted. Candidate sentences having a high similarity are filtered by comparing the source sentence provided by the user with sentences of the constituted translation memory. A source sentence and a corresponding target sentence are outputted in the order of similarity by calculating similarity between the filtered candidate sentences and the source sentence.
    Type: Grant
    Filed: July 25, 2002
    Date of Patent: February 19, 2008
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Ki-Young Lee, Yoon-Hyung Roh, Chang Hyun Kim, Sung Kwon Choi, Young Kil Kim, Young-Ae Seo, Seung Il Yang, Cheol Ryu, Mun-Pyo Hong
  • Publication number: 20030125928
    Abstract: The method for retrieving a similar sentence to a source sentence inputted by a user through a translation memory in a translation aid system is provided. An inverted file of an index word and a translation memory from a parallel corpus are constituted. Candidate sentences having a high similarity are filtered by comparing the source sentence provided by the user with sentences of the constituted translation memory. A source sentence and a corresponding target sentence are outputted in the order of similarity by calculating similarity between the filtered candidate sentences and the source sentence.
    Type: Application
    Filed: July 25, 2002
    Publication date: July 3, 2003
    Inventors: Ki-Young Lee, Yoon-Hyung Roh, Chang Hyun Kim, Sung Kwon Choi, Young Kil Kim, Young-Ae Seo, Seung Il Yang, Cheol Ryu, Mun-Puo Hong