Abstract: Disclosed are a semiconductor device (1) including a MOSPET region and an integrated diode region, and a manufacturing method thereof. More particularly, a semiconductor device (1) including a silicon carbide (SiC) MOSPET region and an integrated Schottky bather diode that reduce forward voltage drop (Vf), device area, and switching oscillation resulting from parasitic inductance are disclosed.

Abstract: A method for manufacturing a gas diffusion layer for a fuel cell wherein carbon nanotubes are impregnated into Korean paper, thereby enhancing electroconductivity, and a gas diffusion layer manufactured thereby. The method for manufacturing a gas diffusion layer for a fuel cell which is to manufacture a gas diffusion layer as a constituent member of a unit cell in a fuel cell, includes a support preparation step of preparing a support with Korean paper; a dispersion preparation step of dispersing a carbon substance in a solvent to form a dispersion, a coating step of coating the support with the dispersion, and a thermal treatment step of thermally treating the dispersion-coated support to fix the carbon substance to the support.

Abstract: A semiconductor device includes channels, a gate structure, and a source/drain layer. The channels are disposed at a plurality of levels, respectively, and spaced apart from each other in a vertical direction on an upper surface of a substrate. The gate structure is disposed on the substrate, at least partially surrounds a surface of each of the channels, and extends in a first direction substantially parallel to the upper surface of the substrate. The source/drain layer is disposed at each of opposite sides of the gate structure in a second direction substantially parallel to the upper surface of the substrate and substantially perpendicular to the first direction and is connected to sidewalls of the channels. A length of the gate structure in the second direction changes along the first direction at a first height from the upper surface of the substrate in the vertical direction.

Abstract: A semiconductor device and a method of fabricating a semiconductor device, the device including a substrate including an element isolation film and an active region defined by the element isolation film; a word line crossing the active region in a first direction; and a bit line structure on the substrate and connected to the active region, the bit line structure extending in a second direction crossing the first direction, wherein the bit line structure includes a first cell interconnection film including an amorphous material or ruthenium, a second cell interconnection film on and extending along the first cell interconnection film and including ruthenium, and a cell capping film on and extending along the second cell interconnection film.

Abstract: A semiconductor device and a method of fabricating a semiconductor device, the device including a substrate including an element isolation film and an active region defined by the element isolation film; a word line crossing the active region in a first direction; and a bit line structure on the substrate and connected to the active region, the bit line structure extending in a second direction crossing the first direction, wherein the bit line structure includes a first cell interconnection film including an amorphous material or ruthenium, a second cell interconnection film on and extending along the first cell interconnection film and including ruthenium, and a cell capping film on and extending along the second cell interconnection film.

Abstract: A method for fabricating a semiconductor device includes forming a first wiring layer, the first wiring layer including a first metal wiring and a first interlayer insulating film wrapping the first metal wiring on a substrate, forming a first via layer, the first via layer including a first via that is in electrical connection with the first metal wiring, and a second interlayer insulating film wrapping the first via on the first wiring layer, and forming a second wiring layer, the second wiring layer including a second metal wiring that is in electrical connection with the first via, and a third interlayer insulating film wrapping the second metal wiring on the first via layer, wherein the third interlayer insulating film contains deuterium and is formed through chemical vapor deposition using a first gas containing deuterium and a second gas containing hydrogen.

Abstract: A semiconductor device and a method of fabricating a semiconductor device, the device including a substrate including an element isolation film and an active region defined by the element isolation film; a word line crossing the active region in a first direction; and a bit line structure on the substrate and connected to the active region, the bit line structure extending in a second direction crossing the first direction, wherein the bit line structure includes a first cell interconnection film including an amorphous material or ruthenium, a second cell interconnection film on and extending along the first cell interconnection film and including ruthenium, and a cell capping film on and extending along the second cell interconnection film.

Abstract: A method for fabricating a semiconductor device includes forming a first wiring layer, the first wiring layer including a first metal wiring and a first interlayer insulating film wrapping the first metal wiring on a substrate, forming a first via layer, the first via layer including a first via that is in electrical connection with the first metal wiring, and a second interlayer insulating film wrapping the first via on the first wiring layer, and forming a second wiring layer, the second wiring layer including a second metal wiring that is in electrical connection with the first via, and a third interlayer insulating film wrapping the second metal wiring on the first via layer, wherein the third interlayer insulating film contains deuterium and is formed through chemical vapor deposition using a first gas containing deuterium and a second gas containing hydrogen.

Abstract: A method for fabricating a semiconductor device includes forming a first wiring layer, the first wiring layer including a first metal wiring and a first interlayer insulating film wrapping the first metal wiring on a substrate, forming a first via layer, the first via layer including a first via that is in electrical connection with the first metal wiring, and a second interlayer insulating film wrapping the first via on the first wiring layer, and forming a second wiring layer, the second wiring layer including a second metal wiring that is in electrical connection with the first via, and a third interlayer insulating film wrapping the second metal wiring on the first via layer, wherein the third interlayer insulating film contains deuterium and is formed through chemical vapor deposition using a first gas containing deuterium and a second gas containing hydrogen.

Abstract: A method for fabricating a semiconductor device includes forming a first wiring layer, the first wiring layer including a first metal wiring and a first interlayer insulating film wrapping the first metal wiring on a substrate, forming a first via layer, the first via layer including a first via that is in electrical connection with the first metal wiring, and a second interlayer insulating film wrapping the first via on the first wiring layer, and forming a second wiring layer, the second wiring layer including a second metal wiring that is in electrical connection with the first via, and a third interlayer insulating film wrapping the second metal wiring on the first via layer, wherein the third interlayer insulating film contains deuterium and is formed through chemical vapor deposition using a first gas containing deuterium and a second gas containing hydrogen.

Abstract: Disclosed is a display apparatus having a water tank in which one or more swimming robots are located. This apparatus includes communicator for communicating with the swimming robot or a mobile terminal, a display for displaying a video, one or more sensors, a wireless power transmitter which is located on an inner wall of the water tank and which includes a plurality of arranged transmission coils, and a controller. Accordingly, a display apparatus and a swimming robot which have artificial intelligence and which perform 5G communication may be provided. As a result, a charging efficiency can be improved, and a user's convenience can be further improved.

Abstract: Disclosed is a display apparatus having a water tank in which one or more swimming robots are located. This apparatus includes a communicator for communicating with a swimming robot or a mobile terminal, a display for displaying a video, and a controller for controlling driving of the swimming robot, wherein the controller receives color information and shape information on the swimming robot through the communicator, and when an item area based on the color information and the shape information on the swimming robot is selected on the video displayed on the display, the controller controls the swimming robot such that the swimming robot moves to the selected item area. Accordingly, interaction between a user, the swimming robot, and the display apparatus may take place.

Abstract: Disclosed is a truck/bus tire that has an improved decoupling groove capable of suppressing unbalanced wear of a shoulder rib and preventing side chipping of a tread, and that has enhanced durability of a belt. The tire has a decoupling groove formed between an outermost rib and a tread lateral side. An offset structure is provided by cutting off a portion around a start point where a virtual line extending from a distal end of the outermost rib of the tread intersects a virtual line extending from the tread lateral side. A side of the outermost rib is parallel to the tread lateral side and the cut-off portion is formed with a “<”-shaped groove. A sacrifice rib protruding from the “<”-shaped groove is formed coplanar with the start point located on the virtual line extending from the tread lateral side.

Abstract: A mobile communication terminal equipped with speaker phone functionality and a method for removing feedback when the speaker phone is in use are disclosed. The mobile communication terminal includes: a first voice input path serving as a default voice input path; a second voice input path serving as an additional voice input path; and a controller for determining whether a speaker phone is in use, wherein the controller selects one of the first and second voice input paths according to whether the speaker phone is in use.

Abstract: Disclosed is a truck/bus tire that has an improved decoupling groove capable of suppressing unbalanced wear of a shoulder rib and preventing side chipping of a tread, and that has enhanced durability of a belt. The tire has a decoupling groove formed between an outermost rib and a tread lateral side. An offset structure is provided by cutting off a portion around a start point where a virtual line extending from a distal end of the outermost rib of the tread intersects a virtual line extending from the tread lateral side. A side of the outermost rib is parallel to the tread lateral side and the cut-off portion is formed with a “<”-shaped groove. A sacrifice rib protruding from the “<”-shaped groove is formed coplanar with the start point located on the virtual line extending from the tread lateral side.