Abstract: A display device includes a display area where an image is displayed, a non-display area disposed adjacent to the display area, a first sub-pixel disposed in the display area, and a second sub-pixel disposed adjacent to the first sub-pixel in the display area. Each of the first sub-pixel and the second sub-pixel includes a plurality of alignment electrodes spaced apart from each other, and a plurality of light emitting elements disposed between the plurality of alignment electrodes. Each of the plurality of light emitting elements includes a first end having a first polarity, and a second end having a second polarity different from the first polarity. An orientation of the light emitting elements in the first sub-pixel and an orientation of the light emitting elements in the second sub-pixel are symmetrical. The first sub-pixel includes an identification pattern for distinguishing the first sub-pixel from the second sub-pixel.

Abstract: A deep learning-based coloring system includes a memory network configured to provide a color feature in response to a specific query and a coloring network configured to perform coloring, based on the color feature generated by the memory network. The memory network includes: a query generation unit configured to generate a query; a neighbor calculation unit configured to calculate k-nearest neighbors, based on similarities between the query and key memory values; a color feature determination unit configured to generate color features for indicating color information stored in the key memory; a threshold triplet loss calculation unit configured to calculate a threshold triplet loss, based on a comparison between a threshold and a distance between the color features; and a memory update unit configured to update a memory, based on whether a distance between a top value and a value of a newly input query is within the threshold.

Abstract: A deep learning-based coloring system includes a memory network configured to provide a color feature in response to a specific query and a coloring network configured to perform coloring, based on the color feature generated by the memory network. The memory network includes: a query generation unit configured to generate a query; a neighbor calculation unit configured to calculate k-nearest neighbors, based on similarities between the query and key memory values; a color feature determination unit configured to generate color features for indicating color information stored in the key memory; a threshold triplet loss calculation unit configured to calculate a threshold triplet loss, based on a comparison between a threshold and a distance between the color features; and a memory update unit configured to update a memory, based on whether a distance between a top value and a value of a newly input query is within the threshold.

Abstract: In methods of forming a trench, first patterns separated from each other by a first width and second patterns separated from each other by a second width are formed on a substrate. The second width is wider than the first width. The substrate is etched using the first patterns and the second patterns to form a first trench having a first depth and a preliminary second trench having a second depth. A sacrificial layer is formed to fill up a space between the first patterns. The substrate is etched using the sacrificial layer to form a second trench having a third depth deeper than the second depth.

Abstract: In methods of forming a trench, first patterns separated from each other by a first width and second patterns separated from each other by a second width are formed on a substrate. The second width is wider than the first width. The substrate is etched using the first patterns and the second patterns to form a first trench having a first depth and a preliminary second trench having a second depth. A sacrificial layer is formed to fill up a space between the first patterns. The substrate is etched using the sacrificial layer to form a second trench having a third depth deeper than the second depth.

Abstract: A method and corresponding article of manufacture are provided for manufacturing a semiconductor device with contact holes of the same step formed by two photolithography processes, where the manufacture includes forming a photoresist pattern by a first photolithography process on an insulating interlayer in which a first contact hole is formed, the photoresist pattern covering the first contact hole, etching the insulating interlayer to form a second contact hole by using the photoresist pattern as an etching mask, partially removing the photoresist pattern to remove an etch by-product from the second contact hole, and performing a process on the second contact hole by using the photoresist pattern residue as a mask to thereby decrease the number of photo processes and simplify the manufacturing process.