Abstract: A semiconductor device includes a stacked film, a plurality of plugs, and a columnar portion. The stacked film includes a plurality of electrodes, which includes a first electrode, and a plurality of first insulating films alternately stacked in a first direction. The plurality of plugs extends through the stacked film in the first direction. The plurality of plugs includes a first plug electrically connected to the first electrode. The columnar portion extends through the stacked film in the first direction. The columnar portion includes a charge storage layer and a semiconductor layer. The first electrode includes a metal layer and the first plug includes a metal layer that is integrally formed with the metal layer of the first electrode and formed of a same material as a material of the metal layer of the first electrode.