Abstract: The present technology is directed to nanoparticle compositions and methods useful in treating RHAMM-positive cancers.

Abstract: An extreme ultraviolet (EUV) light source device includes a source droplet generator for generating source droplets as a target source for generating extreme ultraviolet (EUV) light and for injecting the source droplets to a collector, a light irradiator for directing a detection light to an injection path of the source droplets, a light detector for detecting the detection light blocked by the source droplet, and a source droplet controller electrically connected to the light detector and the source droplet generator for analyzing the detection light to determine whether a satellite of the source droplet is generated or to determine a size of the generated satellite and for controlling a formation of a stream of source droplets based on the determination result.

Abstract: Provided are a polishing composition for chemical mechanical polishing, a method of preparing the polishing composition, and a chemical mechanical polishing method using the polishing composition. The polishing composition which is a water-based polishing composition for planarizing a metal compound thin film including two or more metal elements includes nano-diamond particles as a polishing material and poly(sodium 4-styrenesulfonate) as a dispersion stabilizer for the nano-diamond particles in the polishing composition. Since the nano-diamond particles in the polishing composition have hydrophobic surfaces and poly(sodium 4-styrenesulfonate) effectively stabilizes the nano-diamond particles to prevent the nano-diamond particles from aggregating, excellent polishing characteristics for the metal compound thin film may be obtained due to the nano-diamond particles which have a nano size, high hardness, and excellent dispersibility.

Abstract: An extreme ultraviolet (EUV) light source device includes a source droplet generator for generating source droplets as a target source for generating extreme ultraviolet (EUV) light and for injecting the source droplets to a collector, a light irradiator for directing a detection light to an injection path of the source droplets, a light detector for detecting the detection light blocked by the source droplet, and a source droplet controller electrically connected to the light detector and the source droplet generator for analyzing the detection light to determine whether a satellite of the source droplet is generated or to determine a size of the generated satellite and for controlling a formation of a stream of source droplets based on the determination result.

Abstract: An apparatus and method for generating extreme ultra violet EUV radiation includes a light source providing light to a laser medium to generate a first laser, a droplet generator to provide a droplet to reflect the first laser to one end of the laser medium, a laser generator positioned at the opposite end of the laser medium from that of the droplet and a second laser to expand the droplet or not and to thereby control the conversion efficiency and dose of the EUV generation apparatus.

Abstract: Provided are a polishing composition for chemical mechanical polishing, a method of preparing the polishing composition, and a chemical mechanical polishing method using the polishing composition. The polishing composition which is a water-based polishing composition for planarizing a metal compound thin film including two or more metal elements includes nano-diamond particles as a polishing material and poly(sodium 4-styrenesulfonate) as a dispersion stabilizer for the nano-diamond particles in the polishing composition. Since the nano-diamond particles in the polishing composition have hydrophobic surfaces and poly(sodium 4-styrenesulfonate) effectively stabilizes the nano-diamond particles to prevent the nano-diamond particles from aggregating, excellent polishing characteristics for the metal compound thin film may be obtained due to the nano-diamond particles which have a nano size, high hardness, and excellent dispersibility.

Abstract: A semiconductor device having superior capacitance may include interconnections formed on a semiconductor substrate, an interlayer insulation layer on the interconnections and having vias exposing a portion of the top surface of the interconnections, a capacitor which may be on the interlayer insulation layer and having a bottom electrode, a dielectric layer pattern, and a top electrode which may be sequentially stacked, and a pad structure may be connected to the interconnections through the vias. The pad structure may include pads for bonding with external electronic devices and a first upper interconnection connected to the top electrode of the capacitor.

Abstract: A semiconductor device having superior capacitance may include interconnections formed on a semiconductor substrate, an interlayer insulation layer on the interconnections and having vias exposing a portion of the top surface of the interconnections, a capacitor which may be on the interlayer insulation layer and having a bottom electrode, a dielectric layer pattern, and a top electrode which may be sequentially stacked, and a pad structure may be connected to the interconnections through the vias. The pad structure may include pads for bonding with external electronic devices and a first upper interconnection connected to the top electrode of the capacitor.

Abstract: There are provided metal-insulator-metal (MIM) capacitors and methods of forming the same. The capacitors and the formation methods thereof provide a way of simplifying semiconductor fabrication processes, using component elements of the capacitor and insulating layers around the capacitor. To this end, lower and upper electrodes are sequentially stacked on a semiconductor substrate. A dielectric layer pattern is interposed between the upper and lower electrodes. An etch stop layer pattern and an etch buffer layer are disposed on the upper electrode and under the lower electrode, respectively. The upper and lower electrodes are disposed to expose the dielectric layer pattern and the etch buffer layer.

Abstract: A microwave oven includes a microwave oven chamber in which food is cooked, an input unit for selecting modes of operation and other options, a control unit for driving the microwave oven by a driving signal input from the input unit, an oscillator for generating microwave in the chamber according to the driving signal from the control unit, a sensor unit for detecting a level of vapor generated from the food being cooked and outputting a detection voltage signal corresponding to the detection, and an indicator unit for continuously indicating the cooking state of the food according to the detection voltage signal as the cooking state progresses.