Abstract: In one example, a semiconductor device can comprise a substrate, a device stack, first and second internal interconnects, and an encapsulant. The substrate can comprise a first and second substrate sides opposite each other, a substrate outer sidewall between the first substrate side and the second substrate side, and a substrate inner sidewall defining a cavity between the first substrate side and the second substrate side. The device stack can be in the cavity and can comprise a first electronic device, and a second electronic device stacked on the first electronic device. The first internal interconnect can be coupled to the substrate and the device stack. The encapsulant can cover the substrate inner sidewall and the device stack and can fill the cavity. Other examples and related methods are disclosed herein.

Abstract: Disclosed are a display device and a driving method thereof. A pixel circuit of the display device may be driven in a data sampling phase and a light emitting phase. A electric current flows in a first effective channel of a driving element in the data sampling phase and a electric current flows in a second effective channel of the driving element in the light-emitting phase.

Abstract: Disclosed are a display device and a driving method thereof. A pixel circuit of the display device may be driven in a data sampling phase and a light emitting phase. A electric current flows in a first effective channel of a driving element in the data sampling phase and a electric current flows in a second effective channel of the driving element in the light-emitting phase.

Abstract: A gate driving circuit sequentially outputting a gate voltage using a high level power voltage, a low level power voltage, a start voltage, a previous stage gate voltage, a next stage gate voltage and a clock, includes: a shift register including a plurality of stages connected to each other by a cascade connection, each of the plurality of stages including: a first thin film transistor (TFT) switched by the start voltage or the previous stage gate voltage and transmitting the high level power voltage to a Q node; a second TFT switched by the next stage gate voltage and transmitting the low level power voltage to the Q node; a third TFT switched by a voltage of the Q node and transmitting the clock to an output node; and a first resistor connected between the output node and the low level power voltage.

Abstract: A gate driving circuit sequentially outputting a gate voltage using a high level power voltage, a low level power voltage, a start voltage, a previous stage gate voltage, a next stage gate voltage and a clock, includes: a shift register including a plurality of stages connected to each other by a cascade connection, each of the plurality of stages including: a first thin film transistor (TFT) switched by the start voltage or the previous stage gate voltage and transmitting the high level power voltage to a Q node; a second TFT switched by the next stage gate voltage and transmitting the low level power voltage to the Q node; a third TFT switched by a voltage of the Q node and transmitting the clock to an output node; and a first resistor connected between the output node and the low level power voltage.