Abstract: A display device includes a base layer; a first pattern disposed on the base layer; an insulating layer disposed on the first pattern and including layers; and a second pattern disposed on the insulating layer. At least two of the layers of the insulating layer include a same material.

Abstract: A display device includes a substrate, a first conductive layer on the substrate, the first conductive layer including a data signal line, a first insulating layer on the first conductive layer, a semiconductor layer on the first insulating layer, the semiconductor layer including a first semiconductor pattern, a second insulating layer on the semiconductor layer, and a second conductive layer on the second insulating layer, the second conductive layer including a gate electrode disposed to overlap the first semiconductor pattern, a transistor first electrode disposed to overlap a part of the first semiconductor pattern, wherein the transistor first electrode is electrically connected to the data signal line through a contact hole that penetrates the first and second insulating layers, and a transistor second electrode disposed to overlap another part of the first semiconductor pattern.

Abstract: An embodiment sulfur dioxide-based inorganic electrolyte is provided in which the sulfur dioxide-based inorganic electrolyte is represented by a chemical formula M·(A1·Cl(4-x)Fx)z·ySO2. In this formula, M is a first element selected from the group consisting of Li, Na, K, Ca, and Mg, A1 is a second element selected from the group consisting of Al, Fe, Ga, and Cu, x satisfies a first equation 0?x?4, y satisfies a second equation 0?y?6, and z satisfies a third equation 1?z?2.

Abstract: A variable bidirectional electrostatic filter system with an adjustable distance between a charging part and a dust collecting part is provided herein and includes a high voltage applying means configured to supply a high voltage; a filter housing; a dust collecting part; a forward charging part; a reverse charging part; a forward movement rail installed in the filter housing and configured to adjust a distance from an amplification section while forming the amplification section between the forward charging part and the dust collecting part; a reverse movement rail installed in the filter housing; and a control unit providing an amplification section, in which the charged capturing targets are agglomerated, between the charging part and the dust collecting part and by adjusting the distance from the amplification section prevents unnecessary waste of energy and maintain dust collecting efficiency.

Abstract: A variable bidirectional electrostatic filter system with an adjustable distance between a charging part and a dust collecting part is provided herein and includes a high voltage applying means configured to supply a high voltage; a filter housing; a dust collecting part; a forward charging part; a reverse charging part; a forward movement rail installed in the filter housing and configured to adjust a distance from an amplification section while forming the amplification section between the forward charging part and the dust collecting part; a reverse movement rail installed in the filter housing; and a control unit providing an amplification section, in which the charged capturing targets are agglomerated, between the charging part and the dust collecting part and by adjusting the distance from the amplification section prevents unnecessary waste of energy and maintain dust collecting efficiency.

Abstract: The present invention provides a semiconductor contact structure and a method of forming the same. An interlayer dielectric is patterned to form a contact hole that exposes a predetermined region of conductive material on a semiconductor substrate. A recess is formed in the conductive material exposed by the contact hole and undercuts the walls that define the sides of the contact hole such that the recess is wider than the contact hole. A contact plug fills the recess as well as the contact hole. The contact plug is maintained in position stably atop the underlying conductive material because the lower part of the contact plug is wider than the upper part of the contact plug. Accordingly, the contact plug will not fall over even if the interlayer dielectric reflows during a subsequent process.

Abstract: The present invention provides a semiconductor contact structure and a method of forming the same. An interlayer dielectric is patterned to form a contact hole that exposes a predetermined region of conductive material on a semiconductor substrate. A recess is formed in the conductive material exposed by the contact hole and undercuts the walls that define the sides of the contact hole such that the recess is wider than the contact hole. A contact plug fills the recess as well as the contact hole. The contact plug is maintained in position stably atop the underlying conductive material because the lower part of the contact plug is wider than the upper part of the contact plug. Accordingly, the contact plug will not fall over even if the interlayer dielectric reflows during a subsequent process.

Abstract: The present invention provides a semiconductor contact structure and a method of forming the same. An interlayer dielectric is patterned to form a contact hole that exposes a predetermined region of conductive material on a semiconductor substrate. A recess is formed in the conductive material exposed by the contact hole and undercuts the walls that define the sides of the contact hole such that the recess is wider than the contact hole. A contact plug fills the recess as well as the contact hole. The contact plug is maintained in position stably atop the underlying conductive material because the lower part of the contact plug is wider than the upper part of the contact plug. Accordingly, the contact plug will not fall over even if the interlayer dielectric reflows during a subsequent process.

Abstract: The present invention provides a semiconductor contact structure and a method of forming the same. An interlayer dielectric is patterned to form a contact hole that exposes a predetermined region of conductive material on a semiconductor substrate. A recess is formed in the conductive material exposed by the contact hole and undercuts the walls that define the sides of the contact hole such that the recess is wider than the contact hole. A contact plug fills the recess as well as the contact hole. The contact plug is maintained in position stably atop the underlying conductive material because the lower part of the contact plug is wider than the upper part of the contact plug. Accordingly, the contact plug will not fall over even if the interlayer dielectric reflows during a subsequent process.