Patents by Inventor Seung-Woo DO

Seung-Woo DO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods for fabricating semiconductor devices having fin-shaped patterns by selectively removing oxidized portions of the fin-shaped patterns
    Patent number: 9859398
    Abstract: A method for fabricating a semiconductor device is provided. The method includes forming a first fin-shaped pattern including an upper part and a lower part on a substrate, forming a second fin-shaped pattern by removing a part of the upper part of the first fin-shaped pattern, forming a dummy gate electrode intersecting with the second fin-shaped pattern on the second fin-shaped pattern, and forming a third fin-shaped pattern by removing a part of an upper part of the second fin-shaped pattern after forming the dummy gate electrode, wherein a width of the upper part of the second fin-shaped pattern is smaller than a width of the upper part of the first fin-shaped pattern and is greater than a width of an upper portion of the third fin-shaped pattern.
    Type: Grant
    Filed: February 22, 2017
    Date of Patent: January 2, 2018
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jung-Gun You, Se-Wan Park, Seung-Woo Do, In-Won Park, Sug-Hyun Sung
  • METHODS FOR FABRICATING SEMICONDUCTOR DEVICES HAVING FIN-SHAPED PATTERNS
    Publication number: 20170162670
    Abstract: A method for fabricating a semiconductor device is provided. The method includes forming a first fin-shaped pattern including an upper part and a lower part on a substrate, forming a second fin-shaped pattern by removing a part of the upper part of the first fin-shaped pattern, forming a dummy gate electrode intersecting with the second fin-shaped pattern on the second fin-shaped pattern, and forming a third fin-shaped pattern by removing a part of an upper part of the second fin-shaped pattern after forming the dummy gate electrode, wherein a width of the upper part of the second fin-shaped pattern is smaller than a width of the upper part of the first fin-shaped pattern and is greater than a width of an upper portion of the third fin-shaped pattern.
    Type: Application
    Filed: February 22, 2017
    Publication date: June 8, 2017
    Inventors: Jung-Gun You, Se-Wan PARK, Seung-Woo DO, In-Won PARK, Sug-Hyun SUNG
  • Methods for fabricating semiconductor devices having fin-shaped patterns by selectively removing oxidized fin-shaped patterns
    Patent number: 9620406
    Abstract: A method for fabricating a semiconductor device is provided. The method includes forming a first fin-shaped pattern including an upper part and a lower part on a substrate, forming a second fin-shaped pattern by removing a part of the upper part of the first fin-shaped pattern, forming a dummy gate electrode intersecting with the second fin-shaped pattern on the second fin-shaped pattern, and forming a third fin-shaped pattern by removing a part of an upper part of the second fin-shaped pattern after forming the dummy gate electrode, wherein a width of the upper part of the second fin-shaped pattern is smaller than a width of the upper part of the first fin-shaped pattern and is greater than a width of an upper portion of the third fin-shaped pattern.
    Type: Grant
    Filed: December 15, 2015
    Date of Patent: April 11, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jung-Gun You, Se-Wan Park, Seung-Woo Do, In-Won Park, Sug-Hyun Sung
  • METHODS FOR FABRICATING SEMICONDUCTOR DEVICES HAVING FIN-SHAPED PATTERNS
    Publication number: 20160218180
    Abstract: A method for fabricating a semiconductor device is provided. The method includes forming a first fin-shaped pattern including an upper part and a lower part on a substrate, forming a second fin-shaped pattern by removing a part of the upper part of the first fin-shaped pattern, forming a dummy gate electrode intersecting with the second fin-shaped pattern on the second fin-shaped pattern, and forming a third fin-shaped pattern by removing a part of an upper part of the second fin-shaped pattern after forming the dummy gate electrode, wherein a width of the upper part of the second fin-shaped pattern is smaller than a width of the upper part of the first fin-shaped pattern and is greater than a width of an upper portion of the third fin-shaped pattern.
    Type: Application
    Filed: December 15, 2015
    Publication date: July 28, 2016
    Inventors: Jung-Gun You, Se-Wan PARK, Seung-Woo DO, In-Won PARK, Sug-Hyun SUNG