Abstract: Disclosed is a method of forming patterns and a photoresist film, the method of forming patterns including coating a semiconductor photoresist composition including an organic tin compound on a substrate; drying and heating to form a photoresist film; and exposing and developing the photoresist film, wherein the organic tin compound has at least one organic ligand including a Sn-C bond and at least one organic carbonyloxy group, and the photoresist film includes a compound represented by (R1Sn)xOy(OAR2)z before or after exposure, and the photoresist film including a compound represented by (R1Sn)xOy(OAR2)z.

Abstract: Disclosed are a semiconductor photoresist composition and a method of forming patterns using the same, the semiconductor photoresist composition including an Sn-containing organometallic compound, a carboxylic acid compound represented by Chemical Formula 1, and a solvent.

Abstract: Disclosed are a semiconductor photoresist composition and a method of forming patterns using the same, the semiconductor photoresist composition including a Sn-containing organometallic compound; a Sn-containing organometallic compound, a compound represented by Chemical Formula 1, and a solvent. The descriptions of Chemical Formula 1 are as described in the specification.

Abstract: Disclosed are a semiconductor photoresist composition and a method of forming patterns using the same, the semiconductor photoresist composition including an Sn-containing organometallic compound; a carboxylic acid compound; at least one selected from a sulfonic acid compound and a phosphonic acid compound; and a solvent.

Abstract: A semiconductor photoresist composition including an organometallic compound; and a mixed solvent including an alcohol-based compound and a non-alcohol-based compound in a weight ratio of about 1:99 to about 30:70.

Abstract: A polymer, an organic layer composition, and a method of forming patterns, the polymer including a structural unit represented by Chemical Formula 1 or Chemical Formula 2:

Abstract: Disclosed are a semiconductor photoresist composition including an organometallic compound; a vinyl group-containing acid compound; and a solvent, and a method of forming a pattern using the same.

Abstract: The present application discloses a method for treating a protein deficiency in the central nervous system of a subject in need thereof, comprising systemically administering to the subject a therapeutically effective dose of a fusion polypeptide comprising the first protein, wherein the fusion polypeptide comprises: (a) the first protein; (b) a second protein that provides extended circulation-lifetime in vivo and (c) blood brain barrier crossing facilitating peptide; wherein the fusion polypeptide crosses the blood brain barrier (BBB).

Abstract: A polymer, an organic layer composition, and a method of forming patterns, the polymer including a structural unit represented by Chemical Formula 1 or Chemical Formula 2:

Abstract: A hardmask composition, a hardmask layer manufactured from the hardmask composition, and a method of forming patterns from the hardmask composition, the composition including a solvent; and a polymer including a structural unit represented by Chemical Formula 1,

Abstract: The present application discloses a method for treating a protein deficiency in the central nervous system of a subject in need thereof, comprising systemically administering to the subject a therapeutically effective dose of a fusion polypeptide comprising the first protein, wherein the fusion polypeptide comprises: (a) the first protein; (b) a second protein that provides extended circulation-lifetime in vivo and (c) blood brain barrier crossing facilitating peptide; wherein the fusion polypeptide crosses the blood brain barrier (BBB).

Abstract: A polymer, an organic layer composition, and a method of forming patterns, the polymer including a structural unit represented by Chemical Formula 1 or Chemical Formula 2:

Abstract: A monomer for a hardmask composition is represented by the following Chemical Formula 1,

Abstract: Disclosed are a monomer represented by the following Chemical Formula 1 for a hardmask composition, a hardmask composition including the monomer, and a method of forming patterns using the same. In the above Chemical Formula 1, A, A?, L, L?, X and n are the same as defined in the specification.

Abstract: A hardmask composition includes a monomer represented by the following Chemical Formula 1, a polymer including a moiety represented by the following Chemical Formula 2, a polymer including a moiety represented by the following Chemical Formula 3, or a combination thereof, and a solvent,

Abstract: Disclosed are a monomer represented by the following Chemical Formula 1 for a hardmask composition, a hardmask composition including the monomer, and a method of forming patterns using the same. In the above Chemical Formula 1, A, A?, L, L?, X and n are the same as defined in the specification.

Abstract: A hardmask composition includes a polymer including a moiety represented by one of the following Chemical Formulae 1a to 1c, a monomer represented by the following Chemical Formula 2 and a solvent. In the above Chemical Formulae 1a, 1b, 1c, and 2, R1a, R1b, R4a, R4b, R2a, R2b, R5a, R5b and R3 are the same as defined in the specification.

Abstract: A monomer for a hardmask composition is represented by the following Chemical Formula 1,

Abstract: A hardmask composition includes a monomer represented by the following Chemical Formula 1, a polymer including a moiety represented by the following Chemical Formula 2, a polymer including a moiety represented by the following Chemical Formula 3, or a combination thereof, and a solvent,

Abstract: A photosensitive polymer, the photosensitive polymer including repeating units represented by Formulae 1 to 3: wherein R1 and R3 are independently hydrogen or methyl, R2 is a C4 to C20 acid-labile group, R4 is a lactone-derived group, AR is a substituted or unsubstituted phenyl ring, or a substituted or unsubstituted aryl having from two to three fused aromatic rings, carbon CAR is bonded directly to an aromatic ring of AR, l, m, and n are positive integers, l/(l+m+n) is about 0.1 to about 0.5, m/(l+m+n) is about 0.3 to about 0.5, and n/(l+m+n) is about 0.1 to 0.4.