Abstract: A display apparatus includes a first light-emitting element implementing a first emission area, a second light-emitting element implementing a second emission area, a low reflection layer on the first light-emitting element and the second light-emitting element, a first touch insulating layer including a first opening overlapping the second emission area, and a second touch insulating layer including a second opening overlapping the first opening, a light-blocking layer on the touch sensing layer and including a third opening corresponding to the first emission area and a fourth opening corresponding to the second emission area, and a reflection-adjusting layer wherein a refractive index of the reflection-adjusting layer is higher than a refractive index of the second touch insulating layer.

Abstract: A light-emitting device including a first electrode, a second electrode opposing the first electrode, and an interlayer located between the first electrode and the second electrode, wherein the interlayer includes an emission layer, wherein the emission layer includes m1 dopants and m2 hosts, and m1 and m2 are each 1 or greater, when m1 is 2 or greater, then two or more of the dopants are different from each other, when m2 is 2 or greater, then two or more of the hosts are different from each other, and the light-emitting device satisfies Condition 1: 0 debye·V?DMEML×(Vop?Vinj)?3.41 debye·V??Condition 1 wherein Condition 1 may be understood by referring to the description provided herein.

Abstract: An organometallic compound represented by Formula 1: wherein, in Formula 1, groups and variables are the same as described in the specification.

Abstract: Provided is an organometallic compound represented by Formula 1, an organic light-emitting device including the same, and an electronic apparatus including the organic light-emitting device. M(L1)n1(L2)n2??<Formula 1> M, L1, L2, n1, and n2 in Formula 1 are the same as described in the present specification.

Abstract: Disclosed are: a positive electrode active material for a lithium secondary battery, the positive electrode active material including a nickel-based active material containing 60 mol % or more of nickel, and including a large crystal particle which has a size of 1 ?m to 10 ?m and contains a lanthanide element therein; a method of manufacturing the same; and a lithium secondary battery including a positive electrode including the positive electrode active material.

Abstract: A memory device includes: a memory cell array including a first memory block and a second memory block adjacently disposed in a first direction, driving signal lines respectively corresponding to vertically stacked word lines, and a pass transistor circuit including an odd number of pass transistor groups and connected between the driving signal lines and the memory cell array. One of the odd number of pass transistor groups includes a first pass transistor connected between a first word line of the first memory block and a first driving signal line among the driving signal lines, and a second pass transistor connected between a first word line of the second memory block and the first driving signal line adjacently disposed to the first pass transistor in a second direction.

Abstract: A composition, including m1 dopants; and m2 hosts, wherein m1 and m2 are each an integer of 1 or greater, when m1 is 2 or greater, two or more of the m1 dopants are different from each other, when m2 is 2 or greater, two or more of the m2 hosts are different from each other, and the composition has an image-modifying coordinate represented by: (X,Y) as defined herein.

Abstract: A semiconductor memory includes a substrate that includes pass transistor regions, a peripheral circuit structure that includes pass transistors on the pass transistor regions, and a cell array structure on the peripheral circuit structure, the cell array structure including a plurality of cell array regions and a plurality of connection regions that are alternately arranged along a first direction. The cell array structure includes a stack structure including conductive patterns vertically stacked and correspondingly connected to the pass transistors. The stack structure includes stepwise structures on the connection regions. The connection regions of the cell array structure correspondingly overlap the pass transistor regions of the peripheral circuit structure.

Abstract: A light-emitting device, a method of manufacturing the light-emitting device, and a method of operating the light-emitting device. The light-emitting device includes a first conductive layer comprising gold, an interlayer disposed on a surface of the first conductive layer, the interlayer comprises an inorganic salt, and a plurality of light-emitting group represented by Formula 1 chemically bonded to the surface of the first conductive layer. Formula 1 *—A3—(A1)m1—(A2)m2 A detailed description of Formula 1 is the same as described in this specification.

Abstract: A display apparatus, including a substrate including at least one blue light-emitting unit, and a color control portion provided on the substrate and configured to control a color of a light generated at the substrate, wherein the color control portion includes a first color control element, wherein the first color control element includes a first quantum dot for green light conversion, and the at least one blue light-emitting unit of the substrate includes an emission layer, wherein the emission layer includes a host, a first dopant, and a second dopant, and wherein the display apparatus further satisfies conditions as defined herein.

Abstract: A memory device includes; a memory cell array including a first memory block and a second memory block adjacently disposed in a first direction, driving signal lines respectively corresponding to vertically stacked word lines, and a pass transistor circuit including an odd number of pass transistor groups and connected between the driving signal lines and the memory cell array. One of the odd number of pass transistor groups includes a first pass transistor connected between a first word line of the first memory block and a first driving signal line among the driving signal lines, and a second pass transistor connected between a first word line of the second memory block and the first driving signal line adjacently disposed to the first pass transistor in a second direction.

Abstract: A non-volatile memory device includes a first semiconductor layer including a cell area having a memory cell array and a stair area adjacent to the cell area, and a second semiconductor layer stacked on the first semiconductor layer in a vertical direction and including a row decoder. The first semiconductor layer includes a plurality of word lines stacked in the vertical direction, a layer including at least one string select line stacked on the plurality of word lines, and a plurality of first pass transistors in the stair area and on the layer including the at least one string select line, where, in the stair area, the plurality of word lines have a stepped shape, and the plurality of first pass transistors electrically connect the plurality of word lines to the row decoder.

Abstract: A non-volatile memory device includes a first semiconductor layer and a second semiconductor layer. The first semiconductor layer includes memory cells electrically connected to bit lines each extending in a first direction and word lines each extending in a second direction and stacked in a vertical direction, word line pads which respectively correspond to the word lines and are arranged in a stair shape, and word line contacts respectively electrically connected to the word line pads. The second semiconductor layer includes pass transistors respectively electrically connected to the word line contacts to respectively overlap the word line pads in the vertical direction. Each of the word line pads has a first width in the first direction and a second width in the second direction. Each of the pass transistors has a first pitch in the first direction and a second pitch in the second direction.

Abstract: A vertically-integrated nonvolatile memory device includes a peripheral circuit structure with a peripheral circuit therein, and cell array structure that is bonded to the peripheral circuit structure, and has a cell area and a connection area therein. The cell area includes a plurality of gate electrodes and a plurality of insulating layers alternately stacked, in the connection area. The plurality of gate electrodes include a cell stack having a staircase shape, a plurality of capacitor core contact structures configured to pass through the cell stack in the cell area, and a plurality of capacitor gate contact structures connected to the plurality of gate electrodes in the connection area.

Abstract: A semiconductor chip including a guard ring that surrounds edges of a semiconductor substrate, an internal circuit structure that is formed on the semiconductor substrate and that includes a memory cell array region and a peripheral circuit region, and a crack detection circuit that is located between the guard ring and the internal circuit structure and that detects whether a crack occurs. The semiconductor chip further includes first to fourth chamfer regions having different shapes and sizes depending on the position of a pad or the design arrangement of the internal circuit structure.

Abstract: A nonvolatile memory device includes a plurality of bit lines that is connected with a plurality of cell strings, a common source line that is connected with the plurality of cell strings, at least one dummy bit line that is provided between the common source line and the plurality of bit lines, a control logic circuit that generates at least one dummy bit line driving signal in response to a command from an external device, and a dummy bit line driver that selectively provides a first voltage to the at least one dummy bit line in response to the dummy bit line driving signal.

Abstract: The present disclosure is directed to input suggestion. In particular, the methods and systems of the present disclosure can: receive, from a first application executed by one or more computing devices, data indicating information that has been presented by and/or input into the first application; generate, based at least in part on the received data, one or more suggested candidate inputs for a second application executed by the computing device(s); provide, in association with the second application, an interface comprising one or more options to select at least one suggested candidate input of the suggested candidate input(s); and responsive to receiving data indicating a selection of a particular suggested candidate input of the suggested candidate input(s) via the interface, communicate, to the second application, data indicating the particular suggested candidate input.

Abstract: A memory device includes; a memory cell array including a first memory block and a second memory block adjacently disposed in a first direction, driving signal lines respectively corresponding to vertically stacked word lines, and a pass transistor circuit including an odd number of pass transistor groups and connected between the driving signal lines and the memory cell array. One of the odd number of pass transistor groups includes a first pass transistor connected between a first word line of the first memory block and a first driving signal line among the driving signal lines, and a second pass transistor connected between a first word line of the second memory block and the first driving signal line adjacently disposed to the first pass transistor in a second direction.