Abstract: A method for removing etchant byproduct from an etch reactor and discharging a substrate from an electrostatic chuck of the etch reactor is provided. One or more layers on a substrate electrostatically secured to an electrostatic chuck within a chamber of the etch reactor is etched using a first plasma, causing an etchant byproduct to be generated. A portion of the one or more layers are covered by a photoresist. After the etching is complete, a second plasma is provided into the chamber for a time period sufficient to trim the photoresist and remove a portion of the etchant byproduct. A second time period sufficient to electrostatically discharge the substrate using the second plasma is determined. Responsive to deactivating one or more chucking electrodes of the electrostatic chuck, the second plasma is provided into the chamber for the second time period and the substrate is removed from the chamber.

Abstract: The present invention provides method and apparatus for purifying exhaust gas of a vessel and a vessel including the same, in which a risk for a vessel and crew of being exposed to ammonia gas used to collect carbon dioxide included in exhaust gas emitted from a vessel may be minimized and an ammonia solution may be recycled and reused to collect carbon dioxide, in order to satisfy regulations on discharge of exhaust gas by the IMO. Also, the present invention provides an apparatus 1000 for purifying exhaust gas of a vessel and a method of purifying exhaust gas of a vessel using the same, in which carbon dioxide and sulfur dioxide included in exhaust gas emitted from a vessel may be collected by using a reaction solution and may be changed into a substance that does not affect the environment so as to be stored and transported to land.

Abstract: A method for removing etchant byproduct from an etch reactor and discharging a substrate from an electrostatic chuck of the etch reactor is provided. One or more layers on a substrate electrostatically secured to an electrostatic chuck within a chamber of the etch reactor is etched using a first plasma, causing an etchant byproduct to be generated. A portion of the one or more layers are covered by a photoresist. After the etching is complete, a second plasma is provided into the chamber for a time period sufficient to trim the photoresist and remove a portion of the etchant byproduct. A second time period sufficient to electrostatically discharge the substrate using the second plasma is determined. Responsive to deactivating one or more chucking electrodes of the electrostatic chuck, the second plasma is provided into the chamber for the second time period and the substrate is removed from the chamber.

Abstract: A method for removing etchant byproduct from an etch reactor and discharging a substrate from an electrostatic chuck of the etch reactor is provided. A substrate may be electrostatically secured to an electrostatic chuck within a chamber of an etch reactor. A first plasma may be provided into the chamber to etch the substrate, causing an etchant byproduct to be generated. After the etching is complete, a second plasma may be provided into the chamber, wherein the second plasma is an oxygen containing plasma. The etchant byproduct may be removed and the first substrate may be discharged using the second plasma. The first substrate may be removed from the chamber and a second substrate may be inserted into the chamber without first performing an in-situ cleaning between the removal of the first substrate and the insertion of the second substrate.

Abstract: Embodiments of the present disclosure provide an apparatus and methods for forming stair-like structures with accurate profiles and dimension control for manufacturing three dimensional (3D) stacked semiconductor devices. In one embodiment, a method of forming stair-like structures on a substrate includes forming a film stack including a dielectric layer and a ruthenium containing material, and etching the ruthenium containing material in the film stack exposed by a patterned photoresist layer utilizing a first etching gas mixture comprising an oxygen containing gas.

Abstract: Methods are provided for fabricating semiconductor devices having capacitors, which prevent lower electrodes of the capacitors from breaking or collapsing and which provide increased capacitance of the capacitors. For instance, a method includes forming a first insulating layer on a semiconductor substrate, forming a first hole in the first insulating layer, forming a contact plug in the first hole, forming a second insulating layer having a landing pad, wherein the landing pad contacts an upper surface of the contact plug, forming an etch stop layer on the landing pad and the second insulating layer, forming a third insulating layer on the etch stop layer; forming a third hole through the third insulating layer and etch stop layer to expose the landing pad, selectively etching the exposed landing pad, forming a lower electrode on the selectively etched landing pad, and then forming a capacitor by forming a dielectric layer and an upper electrode on the lower electrode.

Abstract: Methods are provided for fabricating semiconductor devices having capacitors, which prevent lower electrodes of the capacitors from breaking or collapsing and which provide increased capacitance of the capacitors. For instance, a method includes forming a first insulating layer on a semiconductor substrate, forming a first hole in the first insulating layer, forming a contact plug in the first hole, forming a second insulating layer having a landing pad, wherein the landing pad contacts an upper surface of the contact plug, forming an etch stop layer on the landing pad and the second insulating layer, forming a third insulating layer on the etch stop layer; forming a third hole through the third insulating layer and etch stop layer to expose the landing pad, selectively etching the exposed landing pad, forming a lower electrode on the selectively etched landing pad, and then forming a capacitor by forming a dielectric layer and an upper electrode on the lower electrode.

Abstract: Methods are provided for fabricating semiconductor devices having capacitors, which prevent lower electrodes of the capacitors from breaking or collapsing and which provide increased capacitance of the capacitors. For instance, a method includes forming a first insulating layer on a semiconductor substrate, forming a first hole in the first insulating layer, forming a contact plug in the first hole, forming a second insulating layer having a landing pad, wherein the landing pad contacts an upper surface of the contact plug, forming an etch stop layer on the landing pad and the second insulating layer, forming a third insulating layer on the etch stop layer, forming a third hole through the third insulating layer and etch stop layer to expose the landing pad, selectively etching the exposed landing pad, forming a lower electrode on the selectively etched landing pad, and then forming a capacitor by forming a dielectric layer and an upper electrode on the lower electrode.

Abstract: Methods are provided for fabricating semiconductor devices having capacitors, which prevent lower electrodes of the capacitors from breaking or collapsing and which provide increased capacitance of the capacitors. For instance, a method includes forming a first insulating layer on a semiconductor substrate, forming a first hole in the first insulating layer, forming a contact plug in the first hole, forming a second insulating layer having a landing pad, wherein the landing pad contacts an upper surface of the contact plug, forming an etch stop layer on the landing pad and the second insulating layer, forming a third insulating layer on the etch stop layer, forming a third hole through the third insulating layer and etch stop layer to expose the landing pad, selectively etching the exposed landing pad, forming a lower electrode on the selectively etched landing pad, and then forming a capacitor by forming a dielectric layer and an upper electrode on the lower electrode.

Abstract: An etching end point of a plasma etch is determined by defining an etch-stop condition. A layer formed on a substrate is etched using a plasma. A luminous intensity of the plasma is measured to determine a first luminous intensity. The luminous intensity is measured again after a predetermined time to determine a second luminous intensity. A determination is made whether a disturbance occurs. Compensation is applied to the measured luminous intensity if the disturbance occurs. A determination is made whether the measured luminous intensity or the compensated luminous intensity satisfies the etch stop condition.

Abstract: Methods are provided for fabricating semiconductor devices having capacitors, which prevent lower electrodes of the capacitors from breaking or collapsing and which provide increased capacitance of the capacitors. For instance, a method includes forming a first insulating layer on a semiconductor substrate, forming a first hole in the first insulating layer, forming a contact plug in the first hole, forming a second insulating layer having a landing pad, wherein the landing pad contacts an upper surface of the contact plug, forming an etch stop layer on the landing pad and the second insulating layer, forming a third insulating layer on the etch stop layer; forming a third hole through the third insulating layer and etch stop layer to expose the landing pad, selectively etching the exposed landing pad, forming a lower electrode on the selectively etched landing pad, and then forming a capacitor by forming a dielectric layer and an upper electrode on the lower electrode.

Abstract: Provided are a semiconductor device having a self-aligned contact plug and a method of fabricating the semiconductor device. The semiconductor device includes conductive patterns, a first interlayer insulating layer, a first spacer, a second interlayer insulating layer, and a contact plug. In each conductive pattern, a conductive layer and a capping layer are sequentially deposited on an insulating layer over a semiconductor substrate. The first interlayer insulating layer fills spaces between the conductive patterns and has a height such that when the first interlayer insulating layer is placed on the insulating layer, the first interlayer insulating layer is lower than a top surface of the capping layer but higher than a top surface of the conductive layer. The first spacer surrounds the outer surface of the capping layer on the first interlayer insulating layer.

Abstract: Methods for etching a metal layer and a metallization method of a semiconductor device using an etching gas that includes Cl2 and N2 are provided. A mask layer is formed on the metal layer, the etching gas is supplied to the metal layer, and the metal layer is etched by the etching gas using the mask layer as an etch mask. The metal layer may be formed of aluminum or an aluminum alloy. Cl2 and N2 may be mixed at a ratio of 1:1 to 1:10. The etching gas may also include additional gases such as inactive gases or gases that include the elements H, O, F, He, or C. In addition, N2 may be supplied at a flow rate of from 45–65% of the total flow rate of the etching gas, which results in a reduction in the occurrence of micro-loading and cone-shaped defects in semiconductor devices.

Abstract: A semiconductor device includes an insulating layer having a T-shaped groove formed by a wide opening overlapping a narrow opening, a bit line conductive layer that at least partially fills the narrow opening, and a bit line capping layer that fills the groove so that its top surface is as high as that of the insulating layer. Spacers are formed on the inner walls of the wide opening.

Abstract: A semiconductor device including a bit line formed using a damascene technique and a method of fabricating the same. The method includes forming an insulating layer on a substrate, forming a groove by etching the insulating layer to a partial depth, and forming spacers on the inner walls of the groove. An opening is formed by etching the insulating layer disposed under the groove using the spacers as an etch mask. A conductive layer is formed to fill the opening. A capping layer is formed to fill the groove.

Abstract: A second insulating layer is formed on a first insulating layer. A plurality of stacks each including a bit line and a bit line mask are formed on the second insulating layer. A third insulating layer is formed overlying the second insulating layer to fill gaps between the plurality of stacks. A hard mask layer is formed on the third insulating layer. A photoresist pattern is formed on the hard mask layer. The photoresist pattern has an opening region that intersects the plurality of stacks. The hard mask layer and the third insulating layer are sequentially etched, using the photoresist pattern as an etching mask, thereby forming a hard mask pattern and forming a recess in the third insulating layer. The recess exposes a portion of upper sidewalls of the bit line mask. Spacers are formed on the exposed upper sidewalls of the bit line mask.

Abstract: Provided are a semiconductor device having a self-aligned contact plug and a method of fabricating the semiconductor device. The semiconductor device includes conductive patterns, a first interlayer insulating layer, a first spacer, a second interlayer insulating layer, and a contact plug. In each conductive pattern, a conductive layer and a capping layer are sequentially deposited on an insulating layer over a semiconductor substrate. The first interlayer insulating layer fills spaces between the conductive patterns and has a height such that when the first interlayer insulating layer is placed on the insulating layer, the first interlayer insulating layer is lower than a top surface of the capping layer but higher than a top surface of the conductive layer. The first spacer surrounds the outer surface of the capping layer on the first interlayer insulating layer.

Abstract: An etching end point of a plasma etch is determined by defining an etch-stop condition. A layer formed on a substrate is etched using a plasma. A luminous intensity of the plasma is measured to determine a first luminous intensity. The luminous intensity is measured again after a predetermined time to determine a second luminous intensity. A determination is made whether a disturbance occurs. Compensation is applied to the measured luminous intensity if the disturbance occurs. A determination is made whether the measured luminous intensity or the compensated luminous intensity satisfies the etch stop condition.

Abstract: Methods are provided for fabricating semiconductor devices having capacitors, which prevent lower electrodes of the capacitors from breaking or collapsing and which provide increased capacitance of the capacitors. For instance, a method includes forming a first insulating layer on a semiconductor substrate, forming a first hole in the first insulating layer, forming a contact plug in the first hole, forming a second insulating layer having a landing pad, wherein the landing pad contacts an upper surface of the contact plug, forming an etch stop layer on the landing pad and the second insulating layer, forming a third insulating layer on the etch stop layer; forming a third hole through the third insulating layer and etch stop layer to expose the landing pad, selectively etching the exposed landing pad, forming a lower electrode on the selectively etched landing pad, and then forming a capacitor by forming a dielectric layer and an upper electrode on the lower electrode.

Abstract: Provided are a semiconductor device having a self-aligned contact plug and a method of fabricating the semiconductor device. The semiconductor device includes conductive patterns, a first interlayer insulating layer, a first spacer, a second interlayer insulating layer, and a contact plug. In each conductive pattern, a conductive layer and a capping layer are sequentially deposited on an insulating layer over a semiconductor substrate. The first interlayer insulating layer fills spaces between the conductive patterns and has a height such that when the first interlayer insulating layer is placed on the insulating layer, the first interlayer insulating layer is lower than a top surface of the capping layer but higher than a top surface of the conductive layer. The first spacer surrounds the outer surface of the capping layer on the first interlayer insulating layer.