Patents by Inventor Sevag Terterian

Sevag Terterian has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10720456
    Abstract: Methods of fabrication and monolithic integration of a polycrystalline infrared detector structure deposit Group III-V compound semiconductor materials at a low deposition temperature within a range of about 300° C. to about 400° C. directly on an amorphous template. The methods provide wafer-level fabrication of polycrystalline infrared detectors and monolithic integration with a readout integrated circuit wafer for focal plane arrays.
    Type: Grant
    Filed: July 23, 2019
    Date of Patent: July 21, 2020
    Assignee: HRL Laboratories, LLC
    Inventors: Terence J. DeLyon, Rajesh D. Rajavel, Sevag Terterian, Minh B. Nguyen, Hasan Sharifi
  • Patent number: 10490689
    Abstract: Methods of hydrogen atom incorporation and of passivation of grain boundaries of polycrystalline semiconductors use a low temperature, pulsed plasma to incorporate hydrogen atoms into the grain boundaries of polycrystalline semiconductor materials in a controlled manner. A hydrogen-passivated polycrystalline IR detector has hydrogen atoms incorporated into grain boundaries of a polycrystalline Group III-V compound semiconductor detector element and a dark current density characteristic that is lower than the dark current density characteristic of a polycrystalline IR detector without the incorporated hydrogen atoms.
    Type: Grant
    Filed: January 31, 2018
    Date of Patent: November 26, 2019
    Assignee: HRL Laboratories, LLC
    Inventors: Sevag Terterian, Terence J. DeLyon, Bor-An Clayton Tu, Hasan Sharifi
  • Patent number: 10424608
    Abstract: Methods of fabrication and monolithic integration of a polycrystalline infrared detector structure deposit Group III-V compound semiconductor materials at a low deposition temperature within a range of about 300° C. to about 400° C. directly on an amorphous template. The methods provide wafer-level fabrication of polycrystalline infrared detectors and monolithic integration with a readout integrated circuit wafer for focal plane arrays.
    Type: Grant
    Filed: January 31, 2018
    Date of Patent: September 24, 2019
    Assignee: HRL Laboratories, LLC
    Inventors: Terence J. DeLyon, Rajesh D. Rajavel, Sevag Terterian, Minh B. Nguyen, Hasan Sharifi
  • Patent number: 9923114
    Abstract: An infrared detector is provided. The infrared detector includes an absorption layer sensitive to radiation in only a short wavelength infrared spectral band, and a barrier layer coupled to the absorption layer. The barrier layer is fabricated from an alloy including aluminum and antimony, and at least one of gallium or arsenic, and the composition of the alloy is selected such that valence bands of the absorption layer and the barrier layer substantially align.
    Type: Grant
    Filed: December 1, 2015
    Date of Patent: March 20, 2018
    Assignee: THE BOEING COMPANY
    Inventors: Terence J. de Lyon, Sevag Terterian, Hasan Sharifi
  • Patent number: 9876134
    Abstract: A dual-band infrared detector is provided. The dual-band infrared detector includes a first absorption layer sensitive to radiation in only a short wavelength infrared spectral band, and a barrier layer coupled to the first absorption layer. The barrier layer is fabricated from an alloy including aluminum and antimony, and at least one of gallium or arsenic. The dual-band infrared detector also includes a second absorption layer coupled to the barrier layer opposite the first absorption layer. The second absorption layer is sensitive to radiation in only a medium wavelength infrared spectral band. The composition of the alloy used to fabricate the barrier layer is selected such that valence bands of the barrier layer and the first and second absorption layers substantially align.
    Type: Grant
    Filed: December 1, 2015
    Date of Patent: January 23, 2018
    Assignee: THE BOEING COMPANY
    Inventors: Terence J. de Lyon, Sevag Terterian, Hasan Sharifi
  • Patent number: 9818896
    Abstract: An infrared photodetector including a substrate, a barrier layer, and an absorber layer disposed between the substrate and the barrier layer, the absorber layer having a molar concentration grading that results in an uncoated quantum efficiency of greater than about 40 percent.
    Type: Grant
    Filed: December 8, 2016
    Date of Patent: November 14, 2017
    Assignee: The Boeing Company
    Inventors: Terence de Lyon, Sevag Terterian, Hasan Sharifi
  • Publication number: 20170155010
    Abstract: An infrared detector is provided. The infrared detector includes an absorption layer sensitive to radiation in only a short wavelength infrared spectral band, and a barrier layer coupled to the absorption layer. The barrier layer is fabricated from an alloy including aluminum and antimony, and at least one of gallium or arsenic, and the composition of the alloy is selected such that valence bands of the absorption layer and the barrier layer substantially align.
    Type: Application
    Filed: December 1, 2015
    Publication date: June 1, 2017
    Inventors: Terence J. de Lyon, Sevag Terterian, Hasan Sharifi
  • Publication number: 20170155011
    Abstract: A dual-band infrared detector is provided. The dual-band infrared detector includes a first absorption layer sensitive to radiation in only a short wavelength infrared spectral band, and a barrier layer coupled to the first absorption layer. The barrier layer is fabricated from an alloy including aluminum and antimony, and at least one of gallium or arsenic. The dual-band infrared detector also includes a second absorption layer coupled to the barrier layer opposite the first absorption layer. The second absorption layer is sensitive to radiation in only a medium wavelength infrared spectral band. The composition of the alloy used to fabricate the barrier layer is selected such that valence bands of the barrier layer and the first and second absorption layers substantially align.
    Type: Application
    Filed: December 1, 2015
    Publication date: June 1, 2017
    Inventors: Terence J. de Lyon, Sevag Terterian, Hasan Sharifi
  • Patent number: 9064992
    Abstract: A dual-band infrared detector structure based on Type-II superlattices (T2SL) has been developed and experimentally validated. The structure according to the principles of the present invention is designed for a single Indium bump architecture and utilizes a T2SL barrier design that omits the traditional p-n junction region. The barrier design comprises multiple periods where each period comprises multiple monolayers doped P type. By selecting the composition, number of monolayers per period and number of periods, a transition region is created in the conduction band between a first absorber layer and a second absorber layer that allows operation at low biases (<100 mV for both bands) and exhibits a dark current density in the longer wavelength band comparable to that obtained with single-color detectors.
    Type: Grant
    Filed: August 14, 2014
    Date of Patent: June 23, 2015
    Assignee: HRL Laboratories, LLC
    Inventors: Brett Z Nosho, Rajesh D Rajavel, Hasan Sharifi, Sevag Terterian
  • Patent number: 8847202
    Abstract: A dual-band infrared detector structure based on Type-II superlattices (T2SL) has been developed and experimentally validated. The structure according to the principles of the present invention is designed for a single Indium bump architecture and utilizes a T2SL barrier design that omits the traditional p-n junction region. The barrier design comprises multiple periods where each period comprises multiple monolayers doped P type. By selecting the composition, number of monolayers per period and number of periods, a transition region is created in the conduction band between a first absorber layer and a second absorber layer that allows operation at low biases (<100 mV for both bands) and exhibits a dark current density in the longer wavelength band comparable to that obtained with single-color detectors.
    Type: Grant
    Filed: January 17, 2012
    Date of Patent: September 30, 2014
    Assignee: HRL Laboratories, LLC
    Inventors: Brett Z. Nosho, Rajesh D. Rajavel, Hasan Sharifi, Sevag Terterian