Patents by Inventor Sevag Terterian
Sevag Terterian has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240125817Abstract: A probing system includes a device-under-test, a probe device, and a die bonder. The device-under-test includes test patterns. The probe device includes tilt angle sensors. The tilt angle sensors include spikes that protrude from the probe device. The die bonder is operational to mount the device-under-test, mount the probe device facing the device-under-test, compress the probe device and the device-under-test together to causes a subset of the spikes to contact the test patterns, measure a number of connections formed between the tilt angle sensors and the test patterns, determine a first offset angle and a second offset angle between the device-under-test and the probe device based on the number of connections, adjust the spherical positioner in one or more rotational axes in response to the first offset angle and the second offset angle to change a parallelism between the device-under-test and the probe device.Type: ApplicationFiled: October 17, 2022Publication date: April 18, 2024Applicant: The Boeing CompanyInventors: Peter D. Brewer, Chia-Ming Chang, Sevag Terterian, Charbel Abijaoude, Diego Eduardo Carrasco
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Publication number: 20230377929Abstract: A method to align targets on opposite sides of a substrate includes forming a first via pattern in a protective layer on a first side of the substrate. The substrate includes a second side opposite the first side. The first via pattern is a first pixelated version of a first alignment target. The first alignment target is optically recognizable by an automated alignment system. The method includes etching a plurality of first vias through the substrate to the second side in the first via pattern. The first via pattern is optically recognizable by the automated alignment system as the first alignment target on both the first side and the second side of the substrate.Type: ApplicationFiled: May 18, 2022Publication date: November 23, 2023Applicant: The Boeing CompanyInventors: Peter D. Brewer, Sevag Terterian, Diego Eduardo Carrasco, Charbel Abijaoude
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Publication number: 20230378120Abstract: A method to aid in a calibration of a compression system includes mounting a first substrate in a press. The press has calibration parameters, and the first substrate has a test film on a first surface. The method includes mounting a second substrate in the press. The second substrate has spikes arranged in a spike pattern on a second surface. The method includes compressing the first substrate and the second substrate together with a force that causes the spikes to form indentations in the test film, separating the first substrate from the second substrate, determining local pressures applied by the spikes against the test film, and adjusting one or more calibration parameters of the press in response to the local pressures.Type: ApplicationFiled: May 18, 2022Publication date: November 23, 2023Applicant: The Boeing CompanyInventors: Peter D. Brewer, Chia-Ming Chang, Partia Naghibi Mahmoudabadi, Sevag Terterian, Diego Eduardo Carrasco, Charbel Abijaoude
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Publication number: 20230378126Abstract: An inter-substrate bond structure includes an adhesion layer that attached to a first substrate, and an outer gas-permeable layer coupled to the adhesion layer. The outer gas-permeable layer expands and fractures in response to absorbing a gas. The inter-substrate bond structure includes an outer bond layer coupled to the outer gas-permeable layer. The outer bond layer forms an initial thermocompression bond with a mating layer on a second substrate. The initial thermocompression bond bonds the first substrate to the second substrate with the inter-substrate bond structure. The fracture in the inter-substrate bond structure debonds the first substrate from the second substrate while leaving a first portion of the inter-substrate bond structure attached to the first substrate.Type: ApplicationFiled: May 18, 2022Publication date: November 23, 2023Applicant: The Boeing CompanyInventors: Peter D. Brewer, John J. Vajo, Sevag Terterian, Chia-Ming Chang, Charbel Abijaoude, Diego Eduardo Carrasco
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Patent number: 10720456Abstract: Methods of fabrication and monolithic integration of a polycrystalline infrared detector structure deposit Group III-V compound semiconductor materials at a low deposition temperature within a range of about 300° C. to about 400° C. directly on an amorphous template. The methods provide wafer-level fabrication of polycrystalline infrared detectors and monolithic integration with a readout integrated circuit wafer for focal plane arrays.Type: GrantFiled: July 23, 2019Date of Patent: July 21, 2020Assignee: HRL Laboratories, LLCInventors: Terence J. DeLyon, Rajesh D. Rajavel, Sevag Terterian, Minh B. Nguyen, Hasan Sharifi
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Patent number: 10490689Abstract: Methods of hydrogen atom incorporation and of passivation of grain boundaries of polycrystalline semiconductors use a low temperature, pulsed plasma to incorporate hydrogen atoms into the grain boundaries of polycrystalline semiconductor materials in a controlled manner. A hydrogen-passivated polycrystalline IR detector has hydrogen atoms incorporated into grain boundaries of a polycrystalline Group III-V compound semiconductor detector element and a dark current density characteristic that is lower than the dark current density characteristic of a polycrystalline IR detector without the incorporated hydrogen atoms.Type: GrantFiled: January 31, 2018Date of Patent: November 26, 2019Assignee: HRL Laboratories, LLCInventors: Sevag Terterian, Terence J. DeLyon, Bor-An Clayton Tu, Hasan Sharifi
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Patent number: 10424608Abstract: Methods of fabrication and monolithic integration of a polycrystalline infrared detector structure deposit Group III-V compound semiconductor materials at a low deposition temperature within a range of about 300° C. to about 400° C. directly on an amorphous template. The methods provide wafer-level fabrication of polycrystalline infrared detectors and monolithic integration with a readout integrated circuit wafer for focal plane arrays.Type: GrantFiled: January 31, 2018Date of Patent: September 24, 2019Assignee: HRL Laboratories, LLCInventors: Terence J. DeLyon, Rajesh D. Rajavel, Sevag Terterian, Minh B. Nguyen, Hasan Sharifi
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Patent number: 9923114Abstract: An infrared detector is provided. The infrared detector includes an absorption layer sensitive to radiation in only a short wavelength infrared spectral band, and a barrier layer coupled to the absorption layer. The barrier layer is fabricated from an alloy including aluminum and antimony, and at least one of gallium or arsenic, and the composition of the alloy is selected such that valence bands of the absorption layer and the barrier layer substantially align.Type: GrantFiled: December 1, 2015Date of Patent: March 20, 2018Assignee: THE BOEING COMPANYInventors: Terence J. de Lyon, Sevag Terterian, Hasan Sharifi
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Patent number: 9876134Abstract: A dual-band infrared detector is provided. The dual-band infrared detector includes a first absorption layer sensitive to radiation in only a short wavelength infrared spectral band, and a barrier layer coupled to the first absorption layer. The barrier layer is fabricated from an alloy including aluminum and antimony, and at least one of gallium or arsenic. The dual-band infrared detector also includes a second absorption layer coupled to the barrier layer opposite the first absorption layer. The second absorption layer is sensitive to radiation in only a medium wavelength infrared spectral band. The composition of the alloy used to fabricate the barrier layer is selected such that valence bands of the barrier layer and the first and second absorption layers substantially align.Type: GrantFiled: December 1, 2015Date of Patent: January 23, 2018Assignee: THE BOEING COMPANYInventors: Terence J. de Lyon, Sevag Terterian, Hasan Sharifi
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Patent number: 9818896Abstract: An infrared photodetector including a substrate, a barrier layer, and an absorber layer disposed between the substrate and the barrier layer, the absorber layer having a molar concentration grading that results in an uncoated quantum efficiency of greater than about 40 percent.Type: GrantFiled: December 8, 2016Date of Patent: November 14, 2017Assignee: The Boeing CompanyInventors: Terence de Lyon, Sevag Terterian, Hasan Sharifi
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Publication number: 20170155011Abstract: A dual-band infrared detector is provided. The dual-band infrared detector includes a first absorption layer sensitive to radiation in only a short wavelength infrared spectral band, and a barrier layer coupled to the first absorption layer. The barrier layer is fabricated from an alloy including aluminum and antimony, and at least one of gallium or arsenic. The dual-band infrared detector also includes a second absorption layer coupled to the barrier layer opposite the first absorption layer. The second absorption layer is sensitive to radiation in only a medium wavelength infrared spectral band. The composition of the alloy used to fabricate the barrier layer is selected such that valence bands of the barrier layer and the first and second absorption layers substantially align.Type: ApplicationFiled: December 1, 2015Publication date: June 1, 2017Inventors: Terence J. de Lyon, Sevag Terterian, Hasan Sharifi
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Publication number: 20170155010Abstract: An infrared detector is provided. The infrared detector includes an absorption layer sensitive to radiation in only a short wavelength infrared spectral band, and a barrier layer coupled to the absorption layer. The barrier layer is fabricated from an alloy including aluminum and antimony, and at least one of gallium or arsenic, and the composition of the alloy is selected such that valence bands of the absorption layer and the barrier layer substantially align.Type: ApplicationFiled: December 1, 2015Publication date: June 1, 2017Inventors: Terence J. de Lyon, Sevag Terterian, Hasan Sharifi
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Patent number: 9064992Abstract: A dual-band infrared detector structure based on Type-II superlattices (T2SL) has been developed and experimentally validated. The structure according to the principles of the present invention is designed for a single Indium bump architecture and utilizes a T2SL barrier design that omits the traditional p-n junction region. The barrier design comprises multiple periods where each period comprises multiple monolayers doped P type. By selecting the composition, number of monolayers per period and number of periods, a transition region is created in the conduction band between a first absorber layer and a second absorber layer that allows operation at low biases (<100 mV for both bands) and exhibits a dark current density in the longer wavelength band comparable to that obtained with single-color detectors.Type: GrantFiled: August 14, 2014Date of Patent: June 23, 2015Assignee: HRL Laboratories, LLCInventors: Brett Z Nosho, Rajesh D Rajavel, Hasan Sharifi, Sevag Terterian
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Patent number: 8847202Abstract: A dual-band infrared detector structure based on Type-II superlattices (T2SL) has been developed and experimentally validated. The structure according to the principles of the present invention is designed for a single Indium bump architecture and utilizes a T2SL barrier design that omits the traditional p-n junction region. The barrier design comprises multiple periods where each period comprises multiple monolayers doped P type. By selecting the composition, number of monolayers per period and number of periods, a transition region is created in the conduction band between a first absorber layer and a second absorber layer that allows operation at low biases (<100 mV for both bands) and exhibits a dark current density in the longer wavelength band comparable to that obtained with single-color detectors.Type: GrantFiled: January 17, 2012Date of Patent: September 30, 2014Assignee: HRL Laboratories, LLCInventors: Brett Z. Nosho, Rajesh D. Rajavel, Hasan Sharifi, Sevag Terterian