Abstract: Driver circuits are disclosed having a high-side switch and a low-side switch. A pre-charging circuit is provided to pre-charge the low-side switch. In other implementations, methods are disclosed which involve precharging a low-side switch.

Abstract: A semiconductor assembly includes a first FET having gate, source and drain terminals, a switching device being configured to electrically short a gate-source capacitance of the first FET responsive to a control signal, a first gate lead, a second gate lead, a drain lead, and a source lead. The first and second gate leads, the drain lead, and the source lead form externally accessible terminals of the semiconductor assembly. A reverse blocking rating of the switching device is less than a reverse blocking rating of the first FET. A gate of the first FET is directly electrically connected to the first gate lead. A gate of the switching device is directly electrically connected to the second gate lead. The first FET and the switching device are the only active semiconductor devices connected between the first gate lead, the second gate lead, the drain lead, and the source lead.

Abstract: Driver circuits are disclosed having a high-side switch and a low-side switch. A pre-charging circuit is provided to pre-charge the low-side switch. In other implementations, methods are disclosed which involve precharging a low-side switch.

Abstract: A semiconductor assembly includes a first FET having gate, source and drain terminals, a switching device being configured to electrically short a gate-source capacitance of the first FET responsive to a control signal, a first gate lead, a second gate lead, a drain lead, and a source lead. The first and second gate leads, the drain lead, and the source lead form externally accessible terminals of the semiconductor assembly. A reverse blocking rating of the switching device is less than a reverse blocking rating of the first FET. A gate of the first FET is directly electrically connected to the first gate lead. A gate of the switching device is directly electrically connected to the second gate lead. The first FET and the switching device are the only active semiconductor devices connected between the first gate lead, the second gate lead, the drain lead, and the source lead.

Abstract: A semiconductor assembly includes a first FET integrated within the semiconductor assembly and comprising gate, source and drain terminals. The semiconductor assembly further includes a low voltage switching device integrated within the semiconductor assembly and being configured to electrically short a gate-source capacitance of the first FET responsive to a control signal.

Abstract: A measuring resistor for high-current measurements is provided, which has a defined resistance value. The measuring resistor has a resistive layer having a sheet resistivity. The resistance value of the measuring resistor is defined by the resistive layer and is less than the sheet resistivity of the resistive layer.

Abstract: In accordance with an embodiment, a method includes driving a transistor device by a driver having an output coupled to a control node of the transistor through a capacitor and limiting a magnitude of a voltage of one polarity between the control node and a first load node of the transistor device by a rectifier circuit.

Abstract: A semiconductor assembly includes a first FET integrated within the semiconductor assembly and comprising gate, source and drain terminals. The semiconductor assembly further includes a low voltage switching device integrated within the semiconductor assembly and being configured to electrically short a gate-source capacitance of the first FET responsive to a control signal.

Abstract: In accordance with an embodiment, a method includes driving a transistor device by a driver having an output coupled to a control node of the transistor through a capacitor and limiting a magnitude of a voltage of one polarity between the control node and a first load node of the transistor device by a rectifier circuit.

Abstract: A measuring resistor for high-current measurements is provided, which has a defined resistance value. The measuring resistor has a resistive layer having a sheet resistivity. The resistance value of the measuring resistor is defined by the resistive layer and is less than the sheet resistivity of the resistive layer.