Patents by Inventor Severine Bailly

Severine Bailly has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9428844
    Abstract: The present invention concerns a crucible for solidifying a silicon ingot from molten silicon, characterized in that it is coated at least partially on the inner surface thereof with an outer layer provided in the form of a stack of laminations, each lamination having a thickness varying from 5 to 150 ?m, and being formed from a material obtained by thermal decomposition of polysilazane(s) and/or polysiloxane(s) and wherein inorganic particles are embedded having a size varying from 50 ?m to 200 ?m. The present invention further concerns a method for preparing such crucibles.
    Type: Grant
    Filed: January 31, 2013
    Date of Patent: August 30, 2016
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Charles Huguet, Severine Bailly, Virginie Brize
  • Publication number: 20150020545
    Abstract: The present invention concerns a crucible for solidifying a silicon ingot from molten silicon, characterised in that it is coated at least partially on the inner surface thereof with an outer layer provided in the form of a stack of laminations, each lamination having a thickness varying from 5 to 150 ?m, and being formed from a material obtained by thermal decomposition of polysilazane(s) and/or polysiloxane(s) and wherein inorganic particles are embedded having a size varying from 50 ?m to 200 ?m. The present invention further concerns a method for preparing such crucibles.
    Type: Application
    Filed: January 31, 2013
    Publication date: January 22, 2015
    Inventors: Charles Huguet, Severine Bailly, Virginie Brize
  • Publication number: 20130025685
    Abstract: The electrically active layer of an organic heterojunction solar cell is associated with an additional layer, so as to promote the vertical segregation between the p-type organic semiconductor material and the n-type carbonaceous semiconductor material that are present in the electrically active layer. The additional layer is in direct contact with the electrically active layer. Said additional layer comprises a compound forming noncovalent interactions with the n-type semiconductor carbonaceous material. In particular, said compound can be P4VP when the electrically active layer is formed of a mixture of P3HT:PCBM. Moreover, said additional layer comprises a n-type semiconductor material.
    Type: Application
    Filed: April 20, 2011
    Publication date: January 31, 2013
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Solenn Berson, Severine Bailly, Stephane Guillerez, Noella Lemaitre