Abstract: An RF matching network connected to an RF generator of a plasma processing system includes a first RF matching circuit configured to receive an output of a first RF source operating at a first RF frequency. A second RF matching circuit is configured to receive an output of a second RF source operating at a second RF frequency that is greater than the first RF frequency. The second RF matching circuit includes an impedance transforming circuit configured to operate above resonance and to alter a slope of a tuning space of the second RF matching circuit to reduce reflected power. An RF output node communicates with the first RF matching circuit, the second RF matching circuit and an electrode located in a processing chamber of the plasma processing system.

Abstract: A substrate support includes an edge ring, a heater element arranged within the edge ring, a ceramic layer, at least one heating element arranged within the ceramic layer, and a cable configured to provide power from a power source to the heater element and the at least one heating element. The cable includes a first plurality of wires connected to the heater element, a second plurality of wires connected to the at least one heating element, a filter module, and an isolation device connected only to the first plurality of wires between the filter module and the heater element. The first and second pluralities of wires are twisted together within the filter module. The isolation device is configured to compensate for a resonance frequency generated during operation of the heater element and the at least one heating element.

Abstract: A substrate support includes an edge ring, one or more heating elements, and a cable configured to provide power from a power source to the edge ring and the one or more heating elements. The cable includes a first plurality of wires connected to the edge ring, a second plurality of wires connected to the one or more heating elements, a filter module, wherein the first plurality of wires and the second plurality of wires are twisted together within the filter module, and an isolation device. The isolation device is connected to the first plurality of wires and disposed between the filter module and the edge ring. The isolation device is configured to compensate for a resonance frequency generated during operation of the edge ring and the one or more heating elements.

Abstract: Various embodiments include an apparatus to filter radio-frequencies in a plasma-based processing device. In various embodiments, an RF filter device includes a number of substantially-planar spiral-filters electrically coupled to and substantially parallel to each other in a spaced-apart arrangement. In one embodiment, each of the planar spiral-filters is coupled to an adjacent one of the planar spiral filters as either an inside-to-inside electrical connection or an outside-to-outside electrical connection based on an arrangement of the successive spirals so as to increase a total value of inductance. Other methods, devices, apparatuses, and systems are disclosed.

Abstract: A method for identifying a faulty component in a plasma tool is described. The method includes accessing a measurement of a parameter received from a frequency generator and measurement device. The measurement is generated based on a plurality of radio frequency (RF) signals that are provided to a portion of a plasma tool. The RF signals have one or more ranges of frequencies. The method further includes determining whether the parameter indicates an error, which indicates a fault in the portion of the plasma tool. The method includes identifying limits of the frequencies in which the error occurs and identifying based on the limits of the frequencies in which the error occurs one or more components of the portion of the plasma tool creating the error.

Abstract: A method for achieving an etch rate is described. The method includes receiving a calculated variable associated with processing a work piece in a plasma chamber. The method further includes propagating the calculated variable through a model to generate a value of the calculated variable at an output of the model, identifying a calculated processing rate associated with the value, and identifying based on the calculated processing rate a pre-determined processing rate. The method also includes identifying a pre-determined variable to be achieved at the output based on the pre-determined processing rate and identifying a characteristics associated with a real and imaginary portions of the pre-determined variable. The method includes controlling variable circuit components to achieve the characteristics to further achieve the pre-determined variable.

Abstract: A method for achieving an etch rate is described. The method includes receiving a calculated variable associated with processing a work piece in a plasma chamber. The method further includes propagating the calculated variable through a model to generate a value of the calculated variable at an output of the model, identifying a calculated processing rate associated with the value, and identifying based on the calculated processing rate a pre-determined processing rate. The method also includes identifying a pre-determined variable to be achieved at the output based on the pre-determined processing rate and identifying a characteristics associated with a real and imaginary portions of the pre-determined variable. The method includes controlling variable circuit components to achieve the characteristics to further achieve the pre-determined variable.

Abstract: Various embodiments include an apparatus to filter radio-frequencies in a plasma-based processing device. In various embodiments, an RF filter device includes a number of substantially-planar spiral-filters electrically coupled to and substantially parallel to each other in a spaced-apart arrangement. In one embodiment, each of the planar spiral-filters is coupled to an adjacent one of the planar spiral filters as either an inside-to-inside electrical connection or an outside-to-outside electrical connection based on an arrangement of the successive spirals so as to increase a total value of inductance. Other methods, devices, apparatuses, and systems are disclosed.

Abstract: A substrate support includes an edge ring, one or more heating elements, and a cable configured to provide power from a power source to the edge ring and the one or more heating elements. The cable includes a first plurality of wires connected to the edge ring, a second plurality of wires connected to the one or more heating elements, a filter module, wherein the first plurality of wires and the second plurality of wires are twisted together within the filter module, and an isolation device. The isolation device is connected to the first plurality of wires and disposed between the filter module and the edge ring. The isolation device is configured to compensate for a resonance frequency generated during operation of the edge ring and the one or more heating elements.

Abstract: A method for identifying a faulty component in a plasma tool is described. The method includes accessing a measurement of a parameter received from a frequency generator and measurement device. The measurement is generated based on a plurality of radio frequency (RF) signals that are provided to a portion of a plasma tool. The RF signals have one or more ranges of frequencies. The method further includes determining whether the parameter indicates an error, which indicates a fault in the portion of the plasma tool. The method includes identifying limits of the frequencies in which the error occurs and identifying based on the limits of the frequencies in which the error occurs one or more components of the portion of the plasma tool creating the error.

Abstract: A method for identifying a faulty component in a plasma tool is described. The method includes accessing a measurement of a parameter received from a frequency generator and measurement device. The measurement is generated based on a plurality of radio frequency (RF) signals that are provided to a portion of a plasma tool. The RF signals have one or more ranges of frequencies. The method further includes determining whether the parameter indicates an error, which indicates a fault in the portion of the plasma tool. The method includes identifying limits of the frequencies in which the error occurs and identifying based on the limits of the frequencies in which the error occurs one or more components of the portion of the plasma tool creating the error.

Abstract: Systems and methods for generating and using characteristics of an impedance matching model with different impedance matching networks are described impedances and/or power efficiencies are measured using a network analyzer or a sensor. The impedances and/or power efficiencies are used to determine the characteristics. With use of different impedance matching networks, the values of the characteristics are changed to achieve same or similar results across different plasma tools for a variety of conditions.

Abstract: A method for achieving an etch rate is described. The method includes receiving a calculated variable associated with processing a work piece in a plasma chamber. The method further includes propagating the calculated variable through a model to generate a value of the calculated variable at an output of the model, identifying a calculated processing rate associated with the value, and identifying based on the calculated processing rate a pre-determined processing rate. The method also includes identifying a pre-determined variable to be achieved at the output based on the pre-determined processing rate and identifying a characteristics associated with a real and imaginary portions of the pre-determined variable. The method includes controlling variable circuit components to achieve the characteristics to further achieve the pre-determined variable.

Abstract: A method for achieving an etch rate is described. The method includes receiving a calculated variable associated with processing a work piece in a plasma chamber. The method further includes propagating the calculated variable through a model to generate a value of the calculated variable at an output of the model, identifying a calculated processing rate associated with the value, and identifying based on the calculated processing rate a pre-determined processing rate. The method also includes identifying a pre-determined variable to be achieved at the output based on the pre-determined processing rate and identifying a characteristics associated with a real and imaginary portions of the pre-determined variable. The method includes controlling variable circuit components to achieve the characteristics to further achieve the pre-determined variable.

Abstract: Systems and methods for generating and using characteristics of an impedance matching model with different impedance matching networks are described impedances and/or power efficiencies are measured using a network analyzer or a sensor. The impedances and/or power efficiencies are used to determine the characteristics. With use of different impedance matching networks, the values of the characteristics are changed to achieve same or similar results across different plasma tools for a variety of conditions.

Abstract: A method for identifying a faulty component in a plasma tool is described. The method includes accessing a measurement of a parameter received from a frequency generator and measurement device. The measurement is generated based on a plurality of radio frequency (RF) signals that are provided to a portion of a plasma tool. The RF signals have one or more ranges of frequencies. The method further includes determining whether the parameter indicates an error, which indicates a fault in the portion of the plasma tool. The method includes identifying limits of the frequencies in which the error occurs and identifying based on the limits of the frequencies in which the error occurs one or more components of the portion of the plasma tool creating the error.

Abstract: A RF filter system for filtering radio frequency is provided. A first plurality of capacitors, said first plurality of capacitors comprising at least a first capacitor and a second capacitor is provided. A first conductor and second conductor are wound around a first core member to forma first inductor formed from the first conductor and a second inductor formed from the second conductor, a first end of said first conductor being connected to a first end of a first load and to a first end of said first capacitor, wherein a first end of said second conductor being connected to a second end of the first load and a second end of said second capacitor. A first variable component has a first end connected to ground and a second end connected to a second end of said first capacitor and a first end of said second capacitor.

Abstract: A plasma processing system for generating plasma to process at least a wafer. The plasma processing system may include a first coil for conducting a first current for sustaining at least a first portion of the plasma. The plasma processing system may also include a second coil for conducting a second current for sustaining at least a second portion of the plasma. The plasma processing system may also include a power source for powering the first current and the second current. The plasma processing system may also include a parallel circuit for adjusting one of the amperage of the first current and the amperage of the second current. The parallel circuit may be electrically coupled between the power source and at least one of the first coil and the second coil. The parallel circuit may include an inductor and a variable capacitor electrically connected in parallel to each other.

Abstract: A RF filter system for filtering radio frequency is provided. A first plurality of capacitors, said first plurality of capacitors comprising at least a first capacitor and a second capacitor is provided. A first conductor and second conductor are wound around a first core member to forma first inductor formed from the first conductor and a second inductor formed from the second conductor, a first end of said first conductor being connected to a first end of a first load and to a first end of said first capacitor, wherein a first end of said second conductor being connected to a second end of the first load and a second end of said second capacitor. A first variable component has a first end connected to ground and a second end connected to a second end of said first capacitor and a first end of said second capacitor.

Abstract: A system for detecting unconfined-plasma events in a plasma processing chamber is disclosed. The system may include a sensor disposed in the plasma processing chamber for providing a current when unconfined plasma is present in the plasma processing chamber. The system may also include a converter for converting the current into a voltage and a filter for removing noise from the voltage to provide a first signal. The system may also include a detector for determining presence of the unconfined plasma using an amplified level of the first signal and/or the first signal. The system may also include a conductor for coupling the sensor and the converter to conduct the current from the sensor to the converter. The system may also include a shield for enclosing at least a portion of the conductor to at least reduce electromagnetic noise received by the conductor.