Patents by Inventor Seyyed Ehsan Esfahani Rashidi

Seyyed Ehsan Esfahani Rashidi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12009269
    Abstract: To provide more test data during the manufacture of non-volatile memories and other integrated circuits, machine learning is used to generate virtual test values. Virtual test results are interpolated for one set of tests for devices on which the test is not performed based on correlations with other sets of tests. In one example, machine learning determines a correlation study between bad block values determined at die sort and photo-limited yield (PLY) values determined inline during processing. The correlation can be applied to interpolate virtual inline PLY data for all of the memory dies, allowing for more rapid feedback on the processing parameters for manufacturing the memory dies and making the manufacturing process more efficient and accurate. In another set of embodiments, the machine learning is used to extrapolate limited metrology (e.g., critical dimension) test data to all of the memory die through interpolated virtual metrology data values.
    Type: Grant
    Filed: April 21, 2022
    Date of Patent: June 11, 2024
    Assignee: SanDisk Technologies LLC
    Inventors: Cheng-Chung Chu, Masaaki Higashitani, Yusuke Ikawa, Seyyed Ehsan Esfahani Rashidi, Kei Samura, Tsuyoshi Sendoda, Yanli Zhang
  • Publication number: 20240155841
    Abstract: A semiconductor structure includes alternating stacks of insulating layers and electrically conductive layers which are located over a substrate and are laterally spaced apart from each other by first backside trenches and second backside trenches that are interlaced along a horizontal direction, first backside trench fill structures located in the first backside trenches, and second backside trench fill structures located in the second backside trenches. Each of the first backside trench fill structures includes a respective set of first backside support bridge structures located at a first vertical spacing from the substrate, and each of the second backside trench fill structures includes a respective set of second backside support bridge structures located at a second vertical spacing from the substrate that is different from the first vertical spacing.
    Type: Application
    Filed: August 16, 2023
    Publication date: May 9, 2024
    Inventors: Seyyed Ehsan Esfahani RASHIDI, Yanli ZHANG, Koichi MATSUNO, James KAI
  • Publication number: 20220415718
    Abstract: To provide more test data during the manufacture of non-volatile memories and other integrated circuits, machine learning is used to generate virtual test values. Virtual test results are interpolated for one set of tests for devices on which the test is not performed based on correlations with other sets of tests. In one example, machine learning determines a correlation study between bad block values determined at die sort and photo-limited yield (PLY) values determined inline during processing. The correlation can be applied to interpolate virtual inline PLY data for all of the memory dies, allowing for more rapid feedback on the processing parameters for manufacturing the memory dies and making the manufacturing process more efficient and accurate. In another set of embodiments, the machine learning is used to extrapolate limited metrology (e.g., critical dimension) test data to all of the memory die through interpolated virtual metrology data values.
    Type: Application
    Filed: April 21, 2022
    Publication date: December 29, 2022
    Applicant: SanDisk Technologies LLC
    Inventors: Cheng-Chung Chu, Masaaki Higashitani, Yusuke Ikawa, Seyyed Ehsan Esfahani Rashidi, Kei Samura, Tsuyoshi Sendoda, Yanli Zhang