Abstract: Disclosed is a plasma reactor, comprising: a reaction chamber; a base disposed at the bottom of the reaction chamber, configured for supporting a substrate; an RF power supply which outputs an RF power into the reaction chamber, wherein the base includes an electrostatic chuck, the electrostatic chunk including a set of heaters, the set of heaters including a plurality of heating modules, wherein each heating module includes one heater and one electronic switch which are connected in series, the heater in each heating module being connected to one of the heating power source and the ground, and the electronic switch being connected to the other one of the heating power source and the ground; a heating controller including a receive end configured for receiving a temperature control signal, and further a drive signal output end connected to the electronic switch, configured for outputting a drive signal of the electronic switch, wherein the heating controller further comprises at least one optoelectrical drive

Abstract: Disclosed are a multi-zone heating apparatus, a bottom electrode assembly, a plasma processing apparatus, and a temperature adjusting method, wherein the multi-zone heating apparatus includes: a plurality of foil heaters; a plurality of switches, each switch being connected with a foil heater to form a heating unit; two ends of the plurality of heating units are connected to a ground bus and a power supply bus, respectively; a plurality of driving wires, each driving wire being connected with a switch and configured to transmit a control signal of the duty cycle of the switch, the switches being configured to independently control the operating time of the connected foil heaters based on the control signal. The multi-zone heating apparatus can be integrated between the electrostatic chuck and the base in the plasma processing apparatus and can reduce use of external conductive wires, thereby reducing the demand for filters.

Abstract: Disclosed are a multi-zone heating apparatus, a bottom electrode assembly, a plasma processing apparatus, and a temperature adjusting method, wherein the multi-zone heating apparatus includes: a plurality of foil heaters; a plurality of switches, each switch being connected with a foil heater to form a heating unit; two ends of the plurality of heating units are connected to a ground bus and a power supply bus, respectively; a plurality of driving wires, each driving wire being connected with a switch and configured to transmit a control signal of the duty cycle of the switch, the switches being configured to independently control the operating time of the connected foil heaters based on the control signal. The multi-zone heating apparatus can be integrated between the electrostatic chuck and the base in the plasma processing apparatus and can reduce use of external conductive wires, thereby reducing the demand for filters.

Abstract: Method for multi-zone temperature control system having temperature control matrix and gate driver; N*M temperature control modules form N-row M-column matrix, power supply line, and power return line; each temperature control module comprising: a temperature control unit adapts to be heated up by electrical power for temperature controlling; semiconductor switch provided with a gate electrode connected with the gate driver, two ends of the gate being connected with the power supply line, and the power return line through the temperature control unit, respectively. In the temperature control matrix, one ends, which are connected with a power return line, of the temperature control units of temperature control modules in a same row or same column are serially connected, and connected with the power supply line; one ends, which are connected with the power supply line at same row or same column are serially connected, and connected with the power supply line.

Abstract: Disclosed is a plasma reactor, comprising: a reaction chamber; a base disposed at the bottom of the reaction chamber, configured for supporting a substrate; an RF power supply which outputs an RF power into the reaction chamber, wherein the base includes an electrostatic chuck, the electrostatic chunk including a set of heaters, the set of heaters including a plurality of heating modules, wherein each heating module includes one heater and one electronic switch which are connected in series, the heater in each heating module being connected to one of the heating power source and the ground, and the electronic switch being connected to the other one of the heating power source and the ground; a heating controller including a receive end configured for receiving a temperature control signal, and further a drive signal output end connected to the electronic switch, configured for outputting a drive signal of the electronic switch, wherein the heating controller further comprises at least one optoelectrical drive

Abstract: The present invention discloses a multi-zone active-matrix temperature control system, the control system having a temperature control matrix and a gate driver; the temperature control matrix comprising: N*M temperature control modules forming a N-row M-column matrix, a power supply line, and a power return line; each temperature control module comprising: a temperature control unit adapts to be heated up by electrical power for temperature controlling; a semiconductor switch provided with a gate electrode connected with the gate driver, two ends of the gate, which turn on or off, being connected with the power supply line, and with the power return line through the temperature control unit, respectively.