Abstract: A method for processing a session message and apparatus, a device, a storage medium, and a program product. The method includes displaying at least two session messages, the at least two session messages comprising a first session message and a second session message, receiving a message merging instruction, the message merging instruction being configured to instruct merging the first session message and the second session message and displaying, based on the message merging instruction, a third session message obtained by merging the first session message and the second session message.

Abstract: A method for detecting an overlay precision and a method for compensating an overlay deviation are provided.

Abstract: Methods for predicting the development of sepsis in a subject at risk for developing sepsis are provided. In one method, features in a biomarker profile of the subject are evaluated. The subject is likely to develop sepsis if these features satisfy a particular value set. Methods for predicting the development of a stage of sepsis in a subject at risk for developing a stage of sepsis are provided. In one method, a plurality of features in a biomarker profile of the subject is evaluated. The subject is likely to have the stage of sepsis if these feature values satisfy a particular value set. Methods of diagnosing sepsis in a subject are provided. In one such method, a plurality of features in a biomarker profile of the subject is evaluated. The subject is likely to develop sepsis when the plurality of features satisfies a particular value set.

Abstract: A virtual-figure-based data processing method and apparatus that can: display a conversation interface for a conversation between a first object and a second object, and display a first virtual figure of the first object and a second virtual figure of the second object in a virtual figure display region of the conversation interface (S101); display, in a message display region of the conversation interface in response to a trigger operation on the conversation interface, a first conversation message transmitted by the first object to the second object (S102), the first conversation message carrying first object media data associated with the first object; and update the first virtual figure to a first virtual update figure in the virtual figure display region including the second virtual figure, the first virtual update figure being obtained by updating the first virtual figure based on the first object media data (S103).

Abstract: In a data processing method that based on an instant messaging application and which is performed by a data processing device, audio data from an instant messaging application is obtained, and sampled volume data corresponding to the audio data is obtained based on a sampling frequency. A spectrogram corresponding to the audio data is generated according to the audio data and the sampled volume data, and a message bar comprising the spectrogram and the audio data is outputted. Audio progress control is then performed on the audio data in response to a target trigger operation on the message bar, and display control is performed on the spectrogram based on an audio progress.

Abstract: Methods for predicting the development of sepsis in a subject at risk for developing sepsis are provided. In one method, features in a biomarker profile of the subject are evaluated. The subject is likely to develop sepsis if these features satisfy a particular value set. Methods for predicting the development of a stage of sepsis in a subject at risk for developing a stage of sepsis are provided. In one method, a plurality of features in a biomarker profile of the subject is evaluated. The subject is likely to have the stage of sepsis if these feature values satisfy a particular value set. Methods of diagnosing sepsis in a subject are provided. In one such method, a plurality of features in a biomarker profile of the subject is evaluated. The subject is likely to develop sepsis when the plurality of features satisfies a particular value set.

Abstract: A direct chemical lysis composition includes an assay compatible buffer composition and an assay compatible surfactant. When combined with a specimen storage composition, such compositions prevent undesired modifications to nucleic acid and proteins lysed from cells in the biological sample. Assays of samples from such compositions do not require expensive and time-consuming steps such as centrifugation and prolonged high temperature processing. The direct chemical lysis composition of the present invention permits direct nucleic acid extraction from the cells in the biological sample without the need to decant off the transport media or otherwise exchange the transport media with assay compatible buffers. There is no need to combine the sample with proteinase K or another enzyme to extract nucleic acids from the cells. A method for lysing cells to obtain target nucleic acid for assay and a kit for combining the direct chemical lysis composition with a sample are also contemplated.

Abstract: A direct chemical lysis composition includes an assay compatible buffer composition and an assay compatible surfactant. When combined with a specimen storage composition, such compositions prevent undesired modifications to nucleic acid and proteins lysed from cells in the biological sample. Assays of samples from such compositions do not require expensive and time-consuming steps such as centrifugation and prolonged high temperature processing. The direct chemical lysis composition of the present invention permits direct nucleic acid extraction from the cells in the biological sample without the need to decant off the transport media or otherwise exchange the transport media with assay compatible buffers. There is no need to combine the sample with proteinase K or another enzyme to extract nucleic acids from the cells. A method for lysing cells to obtain target nucleic acid for assay and a kit for combining the direct chemical lysis composition with a sample are also contemplated.

Abstract: In a data processing method that based on an instant messaging application and which is performed by a data processing device, audio data from an instant messaging application is obtained, and sampled volume data corresponding to the audio data is obtained based on a sampling frequency. A spectrogram corresponding to the audio data is generated according to the audio data and the sampled volume data, and a message bar comprising the spectrogram and the audio data is outputted. Audio progress control is then performed on the audio data in response to a target trigger operation on the message bar, and display control is performed on the spectrogram based on an audio progress.

Abstract: A method for detecting an overlay precision and a method for compensating an overlay deviation are provided.

Abstract: Methods for predicting the development of sepsis in a subject at risk for developing sepsis are provided. In one method, features in a biomarker profile of the subject are evaluated. The subject is likely to develop sepsis if these features satisfy a particular value set. Methods for predicting the development of a stage of sepsis in a subject at risk for developing a stage of sepsis are provided. In one method, a plurality of features in a biomarker profile of the subject is evaluated. The subject is likely to have the stage of sepsis if these feature values satisfy a particular value set. Methods of diagnosing sepsis in a subject are provided. In one such method, a plurality of features in a biomarker profile of the subject is evaluated. The subject is likely to develop sepsis when the plurality of features satisfies a particular value set.

Abstract: Embodiments of interconnect structures of a three-dimensional (3D) memory device and method for forming the interconnect structures are disclosed. In an example, a 3D NAND memory device includes a semiconductor substrate, an alternating layer stack disposed on the semiconductor substrate, and a dielectric structure, which extends vertically through the alternating layer stack, on an isolation region of the substrate. Further, the alternating layer stack abuts a sidewall surface of the dielectric structure and the dielectric structure is formed of a dielectric material. The 3D memory device additionally includes one or more through array contacts that extend vertically through the dielectric structure and the isolation region, and one or more channel structures that extend vertically through the alternating layer stack.

Abstract: Embodiments of interconnect structures of a three-dimensional (3D) memory device and method for forming the interconnect structures are disclosed. In an example, a 3D NAND memory device includes a semiconductor substrate, an alternating layer stack disposed on the semiconductor substrate, and a dielectric structure, which extends vertically through the alternating layer stack, on an isolation region of the substrate. Further, the alternating layer stack abuts a sidewall surface of the dielectric structure and the dielectric structure is formed of a dielectric material. The 3D memory device additionally includes one or more through array contacts that extend vertically through the dielectric structure and the isolation region, and one or more channel structures that extend vertically through the alternating layer stack.

Abstract: Aspects of the disclosure provide a method for manufacturing a semiconductor device. A first structure of first stacked insulating layers including a first via over a contact region is formed. A second structure is formed by filling at least a top region of the first via with a sacrificial layer. A third structure including the second structure and second stacked insulating layers stacked above the second structure is formed. The third structure further includes a second via aligned with the first via and extending through the second stacked insulating layers. A fourth structure is formed by removing the sacrificial layer to form an extended via including the first via and the second via. A plurality of weights associated with the first structure, the second structure, the third structure, and the fourth structure is determined, and a quality of the extended via is determined based on the plurality of weights.

Abstract: Aspects of the disclosure provide a method for manufacturing a semiconductor device. A first structure of first stacked insulating layers including a first via over a contact region is formed. A second structure is formed by filling at least a top region of the first via with a sacrificial layer. A third structure including the second structure and second stacked insulating layers stacked above the second structure is formed. The third structure further includes a second via aligned with the first via and extending through the second stacked insulating layers. A fourth structure is formed by removing the sacrificial layer to form an extended via including the first via and the second via. A plurality of weights associated with the first structure, the second structure, the third structure, and the fourth structure is determined, and a quality of the extended via is determined based on the plurality of weights.

Abstract: Embodiments of interconnect structures of a three-dimensional (3D) memory device and method for forming the interconnect structures are disclosed. In an example, a 3D NAND memory device includes a semiconductor substrate, an alternating layer stack disposed on the semiconductor substrate, and a dielectric structure, which extends vertically through the alternating layer stack, on an isolation region of the substrate. Further, the alternating layer stack abuts a sidewall surface of the dielectric structure and the dielectric structure is formed of a dielectric material. The 3D memory device additionally includes one or more through array contacts that extend vertically through the dielectric structure and the isolation region, and one or more channel structures that extend vertically through the alternating layer stack.

Abstract: Methods and structures of a three-dimensional memory device are disclosed. In an example, the memory device includes a first alternating conductor/dielectric stack disposed on the substrate and a layer of silicon carbide disposed over the first alternating conductor/dielectric stack. A second alternating conductor/dielectric stack is disposed on the silicon carbide layer. The memory device includes one or more first structures extending orthogonally with respect to the surface of the substrate through the first alternating conductor/dielectric stack and over the epitaxially-grown material disposed in the plurality of recesses, and one or more second structures extending orthogonally with respect to the surface of the substrate through the second alternating conductor/dielectric stack. The one or more second structures are substantially aligned over corresponding ones of the one or more first structures.

Abstract: Methods and structures of a three-dimensional memory device are disclosed. In an example, the memory device includes a first alternating conductor/dielectric stack disposed on the substrate and a layer of silicon carbide disposed over the first alternating conductor/dielectric stack. A second alternating conductor/dielectric stack is disposed on the silicon carbide layer. The memory device includes one or more first structures extending orthogonally with respect to the surface of the substrate through the first alternating conductor/dielectric stack and over the epitaxially-grown material disposed in the plurality of recesses, and one or more second structures extending orthogonally with respect to the surface of the substrate through the second alternating conductor/dielectric stack. The one or more second structures are substantially aligned over corresponding ones of the one or more first structures.

Abstract: Embodiments of interconnect structures of a three-dimensional (3D) memory device and method for forming the interconnect structures are disclosed. In an example, a 3D NAND memory device includes a semiconductor substrate, an alternating layer stack disposed on the semiconductor substrate, and a dielectric structure, which extends vertically through the alternating layer stack, on an isolation region of the substrate. Further, the alternating layer stack abuts a sidewall surface of the dielectric structure and the dielectric structure is formed of a dielectric material. The 3D memory device additionally includes one or more through array contacts that extend vertically through the dielectric structure and the isolation region, and one or more channel structures that extend vertically through the alternating layer stack.

Abstract: Methods for predicting the development of sepsis in a subject at risk for developing sepsis are provided. In one method, features in a biomarker profile of the subject are evaluated. The subject is likely to develop sepsis if these features satisfy a particular value set. Methods for predicting the development of a stage of sepsis in a subject at risk for developing a stage of sepsis are provided. In one method, a plurality of features in a biomarker profile of the subject is evaluated. The subject is likely to have the stage of sepsis if these feature values satisfy a particular value set. Methods of diagnosing sepsis in a subject are provided. In one such method, a plurality of features in a biomarker profile of the subject is evaluated. The subject is likely to develop sepsis when the plurality of features satisfies a particular value set.