Patents by Inventor Sha Zhao

Sha Zhao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11971376
    Abstract: An experimental technology for detecting a hydrogen bond based on an ssNMR technology includes: (1) exciting a 1H nucleus of an RNA sample with a ?/2 pulse; (2) applying two ? pulses every half rotation period on an X nucleus of the RNA sample; (3) applying a ? pulse on the 1H nucleus of the RNA sample; (4) applying two ? pulses every half rotation period on the X nucleus of the RNA sample; (5) applying a 90° pulse on 1H and X atoms of the RNA sample; r a chemical shift of X in indirect dimension; (7) applying the 90° pulse on the 1H and X nuclei of the RNA sample; (8) repeating steps 2, 3, and 4; and (9) collecting the 1H signal in direct dimension; where X is selected from the group consisting of 15N and 13C.
    Type: Grant
    Filed: September 23, 2022
    Date of Patent: April 30, 2024
    Assignee: East China University of Science and Technology
    Inventors: Shenlin Wang, Sha Zhao
  • Patent number: 11929368
    Abstract: An array substrate and a display panel. The array substrate includes a thin film transistor array layer including a driving transistor, a switching transistor, and a capacitor. The driving transistor includes a first active layer, a first gate insulating layer, a first gate, and an insulating dielectric layer sequentially stacked. The switching transistor includes a second active layer, a second gate insulating layer, and a second gate sequentially stacked. The insulating dielectric layer and the second gate insulating layer are located at a same layer. A thickness of the first gate insulating layer is greater than a thickness of the second gate insulating layer. The capacitor includes a first electrode plate and a second electrode plate. The first electrode plate and the first gate are disposed on same layer, and the second electrode plate and the second gate are disposed on same layer.
    Type: Grant
    Filed: November 4, 2021
    Date of Patent: March 12, 2024
    Assignee: Yungu (Gu'an) Technology Co., Ltd.
    Inventors: Dongfang Zhao, Kookchul Moon, Junfeng Li, Zhe Du, Yong Ge, Sha Yuan, Lin Xu
  • Publication number: 20240067673
    Abstract: A modified nucleoside or nucleotide, the 3?-OH of the modified nucleoside or nucleotide being reversibly blocked; meanwhile, the present invention also relates to a kit comprising the nucleoside or nucleotide, and a sequencing method based on the nucleoside or nucleotide.
    Type: Application
    Filed: October 21, 2021
    Publication date: February 29, 2024
    Inventors: Xun XU, Bo TENG, Wenwei ZHANG, Ao CHEN, Handong LI, Shengyi YAN, Shitian ZHUO, Liang SHEN, Yonghui ZHANG, Nanfeng GAO, Jie ZHAO, Sha LIAO
  • Publication number: 20230228696
    Abstract: An experimental technology for detecting a hydrogen bond based on an ssNMR technology includes: (1) exciting a 1H nucleus of an RNA sample with a ?/2 pulse; (2) applying two ? pulses every half rotation period on an X_nucleus of the RNA sample; (3) applying a ? pulse on the 1H nucleus of the RNA sample; (4) applying two ? pulses every half rotation period on the X nucleus of the RNA sample; (5) applying a 90° pulse on 1H and X atoms of the RNA sample; (6) recording a chemical shift of X in indirect dimension; (7) applying the 90° pulse on the 1H and X nuclei of the RNA sample; (8) repeating steps 2, 3, and 4; and (9) collecting the 1H signal in direct dimension; where X is selected from the group consisting of 15N and 13C.
    Type: Application
    Filed: September 23, 2022
    Publication date: July 20, 2023
    Inventors: Shenlin Wang, Sha Zhao
  • Publication number: 20220319836
    Abstract: Exemplary processing methods include forming a nucleation layer on a substrate. The nucleation layer may be formed by physical vapor deposition (PVD), and the physical vapor deposition may be characterized by a deposition temperature of greater than or about 700° C. The methods may further include forming a patterned mask layer on the nucleation layer. The patterned mask layer may include openings that expose portions of the nucleation layer. Gallium-and-nitrogen-containing regions may be formed on the exposed portions of the nucleation layer. In additional embodiments, the nucleation layer may include a first and second portion separated by an interlayer that stop the propagation of at least some dislocations in the nucleation layer.
    Type: Application
    Filed: March 17, 2022
    Publication date: October 6, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Michael Chudzik, Ria Someshwar, Daniel Deyo, Michel Khoury, Sha Zhao