Abstract: A Static Random Access Memory (SRAM) cell is provided with an improved robustness to radiation induced soft errors. The SRAM cell comprises the following elements. First and second storage nodes are configured to store complementary voltages. Access transistors are configured to selectively couple the first and second storage nodes to a corresponding bit line. Drive transistors are configured to selectively couple one of the first and second storage nodes to ground. Load transistors are configured to selectively couple the other one of the first and second storage nodes to a power supply. At least one stabilizer transistor is configured to provide a corresponding redundant storage node and limit feedback between the first and second storage nodes. The redundant storage node is capable of restoring the first or second storage nodes in case of a soft error.