Patents by Inventor Shah Akbar

Shah Akbar has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Vertical bipolar transistor with collector and base extensions
    Patent number: 4982257
    Abstract: A compressed vertical bipolar transistor configuration that eliminates one side of the standard symmetrical base contact, while also eliminating the requirement for a collector contact reach-thru. The bipolar transistor comprises: a collector layer; a base layer disposed over the collector layer; an emitter layer disposed over the base layer; a first sidewall insulating layer disposed adjacent to and in contact with one side of the emitter layer, the base layer, and at least a portion of the collector layer; a second sidewall insulating layer disposed adjacent to and in contact with another side of the emitter layer and at least a portion of the base layer; and a base contact extension layer formed from heavily doped semiconductor material of the same conductivity type as the base layer, said base contact extension layer being in contact with an extending laterally from another side of the base layer.
    Type: Grant
    Filed: December 19, 1989
    Date of Patent: January 1, 1991
    Assignee: International Business Machines Corporation
    Inventors: Shah Akbar, Patricia L. Kroesen, Seiki Ogura, Nivo Rovedo
  • Vertical bipolar transistor
    Patent number: 4957875
    Abstract: A compressed vertical bipolar transistor configuration that eliminates one side of the standard symmetrical base contact, while also eliminating the requirement for a collector contact reach-thru. The bipolar transistor comprises: a collector layer; a base layer disposed over the collector layer; an emitter layer disposed over the base layer; a first sidewall insulating layer disposeed adjacent to and in contact with one side of the emitter layer, the base layer, and at least a portion of the collector layer; a second sidewall insulating layer disposed adjacent to and in contact with another side of the emitter layer and at least a portion of the base layer; and a base contact extension layer formed from heavily doped semiconductor material of the same conductivity type as the base layer, said base contact extension layer being in contact with and extending laterally from another side of the base layer.
    Type: Grant
    Filed: August 1, 1988
    Date of Patent: September 18, 1990
    Assignee: International Business Machines Corporation
    Inventors: Shah Akbar, Patricia L. Kroesen, Seiki Ogura, Nivo Rovedo