Abstract: The present invention relates to a compact, lightweight, cost-efficient ultraviolet-visible-far infrared (UV-VIS-IR) telescope system, covering the 300 nm to 2500 nm (0.3 ?m to 2.5 ?m) spectral range, based on a fast focal-ratio, reflective optics design, and an optical coupling interface appropriate for COTS spectrometers, commensurate with about 1U-2U CubeSat payload volume.

Abstract: A methane alert station for detecting methane gas in an environment. The methane alert station comprises a casing, at least one window opening formed in the casing, a infrared transmitting window disposed in the at least one window opening, an infrared light source disposed adjacent to the infrared transmitting window, a hyperbolic mirror disposed in the casing coaxially with a central axis, a Winston cone disposed coaxially with the central axis and spaced from the hyperbolic mirror along the central axis, and a filter-detector arranged coaxially with the central axis and so that the Winston cone is disposed between the hyperbolic mirror and the filter-detector. The infrared light source is configured to emit an outgoing infrared light from the casing. The filter-detector is configured to measure a methane gas concentration in the environment by measuring an absorption of infrared radiation of the methane gas at specific wavelength bandwidths.

Abstract: An analog digital converter that does not require a dedicated reference voltage, can digitize a rail-rail input signal and provide house-keeping functions to a ROIC or other IC. The RHADR system may operate without support from a main electronics board, which would only have to supply a power supply voltage to, and read the outputs from, the chip. This is achieved with (1) a Pivoting Successive Approximation Register ADC (PSAR ADC) and (2) radiation hard by design (RHBD) techniques.

Abstract: An apparatus for measuring vapor partial pressures of water and carbon dioxide includes a pair of infrared (IR) sources and a pair of quad filter detectors are placed opposite to one another such that the vapor partial pressures of water (H2O) and carbon dioxide (CO2) is measured and quantified in a short pathlength gas cell.

Abstract: An apparatus include one or more DACs and a resistor divider are configured to generate a variable bias voltage VBIAS with respect to a CM voltage VCM. The CM voltage VCM is applied to a cathode of one or more thermopiles or a negative input of one or more amplifiers to prevent saturation and over range of one or more low voltage readout amplifiers and one or more ADCs.

Abstract: An apparatus include one or more DACs and a resistor divider are configured to generate a variable bias voltage VBIAS with respect to a CM voltage VCM. The CM voltage VCM is applied to a cathode of one or more thermopiles or a negative input of one or more amplifiers to prevent saturation and over range of one or more low voltage readout amplifiers and one or more ADCs.

Abstract: The present invention relates to uncooled microbolometers which can be integrated in future thermal instruments engaged in land imaging on future observatories. The present invention includes: (1) developing and characterizing a microstructured VOx thin film, and, (2) fabricating an uncooled microbolometer array over the 8-14 micron spectral band.

Abstract: A Gated CDS Integrator (GCI) may amplify low-level signals without introducing excessive offset and noise. The GCI may also amplify the low level signals with accurate and variable gain. The GCI may include a modulator preceding an amplifier such that offset or noise present in a signal path between the modulator and a demodulator input is translated to a higher out of band frequency, and thereafter reduced by a double sampled discrete time integrator which also reduces thermal noise. The thermal noise may also be reduced by averaging the output of the discrete time integrator.

Abstract: A Gated CDS Integrator (GCI) may amplify low-level signals without introducing excessive offset and noise. The GCI may also amplify the low level signals with accurate and variable gain. The GCI may include a modulator preceding a linear amplifier such that offset or noise present in a signal path between the modulator and a demodulator input is translated to a higher out of band frequency.

Abstract: An autozero amplifier may include a window comparator network to monitor an output offset of a differential amplifier. The autozero amplifier may also include an integrator to receive a signal from a latched window comparator network, and send an adjustment signal back to the differential amplifier to reduce an offset of the differential amplifier.

Abstract: An autozero amplifier may include a window comparator network to monitor an output offset of a differential amplifier. The autozero amplifier may also include an integrator to receive a signal from a latched window comparator network, and send an adjustment signal back to the differential amplifier to reduce an offset of the differential amplifier.

Abstract: A Gated CDS Integrator (GCI) may amplify low-level signals without introducing excessive offset and noise. The GCI may also amplify the low level signals with accurate and variable gain. The GCI may include a modulator preceding an amplifier such that offset or noise present in a signal path between the modulator and a demodulator input is translated to a higher out of band frequency, and thereafter reduced by a double sampled discrete time integrator which also reduces thermal noise. The thermal noise may also be reduced by averaging the output of the discrete time integrator.

Abstract: A Gated CDS Integrator (GCI) may amplify low-level signals without introducing excessive offset and noise. The GCI may also amplify the low level signals with accurate and variable gain. The GCI may include a modulator preceding a linear amplifier such that offset or noise present in a signal path between the modulator and a demodulator input is translated to a higher out of band frequency.

Abstract: Provided herein are a wearable radiation detector and a method of controlling thereof, the detector including: the radiation collection unit operable to collect light and output a signal corresponding to the light collected; a memory; a display unit; a processor operable to receive the signal output by the radiation collection unit, to store a value in the memory corresponding to the signal output by the radiation collection unit, to output an output signal based at least on the signal corresponding to the light collected by the radiation collection unit and to control the display unit to display an indication corresponding to the output signal, wherein the determining includes continually calculating the maximum exposure level based on the light being received by the radiation collection unit.

Abstract: Provided herein are a wearable radiation detector and a method of controlling thereof, the detector including: the radiation collection unit operable to collect light and output a signal corresponding to the light collected; a memory; a display unit; a processor operable to receive the signal output by the radiation collection unit, to store a value in the memory corresponding to the signal output by the radiation collection unit, to output an output signal based at least on the signal corresponding to the light collected by the radiation collection unit and to control the display unit to display an indication corresponding to the output signal, wherein the determining includes continually calculating the maximum exposure level based on the light being received by the radiation collection unit.

Abstract: Provided herein are a wearable radiation detector and a method of controlling thereof, the detector including: the radiation collection unit operable to collect light and output a signal corresponding to the light collected; a memory; a display unit; a processor operable to receive the signal output by the radiation collection unit, to store a value in the memory corresponding to the signal output by the radiation collection unit, to output an output signal based at least on the signal corresponding to the light collected by the radiation collection unit and to control the display unit to display an indication corresponding to the output signal, wherein the determining includes continually calculating the maximum exposure level based on the light being received by the radiation collection unit.

Abstract: Provided herein are a wearable radiation detector and a method of controlling thereof, the detector including: the radiation collection unit operable to collect light and output a signal corresponding to the light collected; a memory; a display unit; a processor operable to receive the signal output by the radiation collection unit, to store a value in the memory corresponding to the signal output by the radiation collection unit, to output an output signal based at least on the signal corresponding to the light collected by the radiation collection unit and to control the display unit to display an indication corresponding to the output signal, wherein the determining includes continually calculating the maximum exposure level based on the light being received by the radiation collection unit.

Abstract: The invention concerns a single detector with two designable wavelengths and bandwidths for ultraviolet detection based on n?/n+-GaN and AlGaN structures grown over sapphire substrates. The detector has several layers grown over a sapphire substrates, including a buffer layer comprising AlN; a first band-edge comprising AlX Ga1-X N; a second band-edge comprising AlYGa1-Y N; a third band-edge comprising AlZ Ga1-Z N. The detector also has ohmic contacts formed on the AlX Ga1-X N band-edge. A bias voltage is applied to the detector through the ohmic contacts so as to select a range of wavelengths in the UV region of interest.

Abstract: Pt/n?GaN Schottky barrier diodes are disclosed that are particularly suited to serve as ultra-violet sensors operating at wavelengths below 200 nm. The Pt/n?GaN Schottky barrier diodes have very large active areas, up to 1 cm2, which exhibit extremely low leakage current at low reverse biases. Very large area Pt/n?GaN Schottky diodes of sizes 0.25 cm2 and 1 cm2 have been fabricated from n?/n+ GaN epitaxial layers grown by vapor phase epitaxy on single crystal c-plane sapphire, which showed leakage currents of 14 pA and 2.7 nA, respectively for the 0.25 cm2 and 1 cm2 diodes both configured at a 0.5V reverse bias.