Abstract: An analysis chamber for an optical-metrology tool includes an enclosure having an opening oriented toward an optical-metrology specimen and aligned substantially parallel to the specimen; at least one transparent window arranged in the enclosure; at least one fluid inlet passing through the enclosure, the fluid inlet coupled to an analysis-fluid source; and an enclosure support configured to hold the enclosure above and in proximity to the specimen.

Abstract: A system and method is provided for correcting alignment of a product on a tool and, more particularly, to a system and method for correcting alignment of a wafer on a chuck of a tool. The system is a tool including at least one contact near a circumference of the tool and a grounded contact proximate to the at least one contact.

Abstract: A system and method is provided for correcting alignment of a product on a tool and, more particularly, to a system and method for correcting alignment of a wafer on a chuck of a tool. The system is a tool including at least one contact near a circumference of the tool and a grounded contact proximate to the at least one contact.

Abstract: A system and method is provided for correcting alignment of a product on a tool and, more particularly, to a system and method for correcting alignment of a wafer on a chuck of a tool. The system is a tool including at least one contact near a circumference of the tool and a grounded contact proximate to the at least one contact.

Abstract: Methods, apparatuses and systems for monitoring a stage alignment in a processing system are disclosed. A method for monitoring a stage alignment in a processing system may include providing a calibration target on a surface of the stage; measuring an angle of incident of a light beam to the calibration target; and monitoring the stage alignment based on the determined angle of incidence.

Abstract: Disclosed is an electrochemical etching system with localized etching capability. The system allows multiple different porous semiconductor regions to be formed on a single semiconductor wafer. Localized etching is achieved through the use of one or more stationary and/or movable computer-controlled inner containers operating within an outer container. The outer container holds the electrolyte solution and acts as an electrolyte supply source for the inner container(s). The inner container(s) limit the size of the etched region of the semiconductor wafer by confining the electric field. Additionally, the current amount passing through each inner container during the electrochemical etching process can be selectively adjusted to achieve a desired result within the etched region. Localized etching of sub-regions within each etched region can also be achieved through the use of different stationary and/or moveable electrode structures and shields within each inner container.

Abstract: A system and method of characterizing a parameter of an ultra thin film, such as a gate oxide layer. A system is disclosed that includes a structure having a pseudo substrate positioned below an ultra thin film, wherein the pseudo substrate includes an optical mirror for enhancing an optical response; and a system for characterizing the ultra thin film by applying a light source to the ultra thin film and analyzing the optical response.

Abstract: A position sensing system for an optical metrology system, includes a plurality of photonic devices distributed on a carrier for providing a photonic response when interrogated with a measuring light, wherein a collective photonic response from the plurality indicates the position of the carrier. A method and an optical metrology system are also provided.

Abstract: Optical measurement method and systems employing a fixed polarizer are disclosed. In one embodiment, the method includes providing at least one optical detection system having a fixed polarizer having a first type polarization; providing a first target on a substrate and a second target on the substrate; optically measuring the first target and the second target using the at least one optical detection system with the first target being positioned at a right angle relative to the second target to obtain a first measurement with the first type polarization and a second measurement with a second type-equivalent polarization; and combining the first measurement and the second measurement to obtain the optical measurement.

Abstract: Disclosed is an electrochemical etching system with localized etching capability. The system allows multiple different porous semiconductor regions to be formed on a single semiconductor wafer. Localized etching is achieved through the use of one or more stationary and/or movable computer-controlled inner containers operating within an outer container. The outer container holds the electrolyte solution and acts as an electrolyte supply source for the inner container(s). The inner container(s) limit the size of the etched region of the semiconductor wafer by confining the electric field. Additionally, the current amount passing through each inner container during the electrochemical etching process can be selectively adjusted to achieve a desired result within the etched region. Localized etching of sub-regions within each etched region can also be achieved through the use of different stationary and/or moveable electrode structures and shields within each inner container.

Abstract: A method, system and computer program product for determining an angle of incidence of a light beam illuminating a workpiece positioned on a stage are disclosed. A method for determining an angle of incidence of a light beam illuminating a workpiece positioned on a stage may include: positioning a calibration target on the stage with multiple different tilts; first determining an angle of incident of the light beam with respect to the calibration target with each tilt using a detector; mapping a response of the detector to a determined angle of incidence; and second determining the angle of incidence with respect to the workpiece based on a result of the mapping.

Abstract: A method, system and computer program product for determining an Azimuth angle of an incident beam to a wafer are disclosed. A method comprises: using the incident beam to make a first set of measurements of calibration targets of a first set of grating angles that are different than one another; analyzing the first set of measurements to determine an reference grating angle which corresponds to a grating line to which the incident beam has a practically zero Azimuth angle; and determining the Azimuth angle of the incident beam to the wafer using the determined reference grating angle.

Abstract: A system and method for correcting alignment of a product on a tool and, more particularly, to a system and method for correcting alignment of a wafer on a chuck of a tool. The system is a tool comprising at least one contact near a circumference of the tool and a grounded contact proximate to the at least one contact. The method comprises measuring current on each branch of a circuit and calculating an angle of a wafer based on a difference in the current on each branch of the circuit.

Abstract: Optical measurement method and systems employing a fixed polarizer are disclosed. In one embodiment, the method includes providing at least one optical detection system having a fixed polarizer having a first type polarization; providing a first target on a substrate and a second target on the substrate; optically measuring the first target and the second target using the at least one optical detection system with the first target being positioned at a right angle relative to the second target to obtain a first measurement with the first type polarization and a second measurement with a second type-equivalent polarization; and combining the first measurement and the second measurement to obtain the optical measurement.

Abstract: A system and method of characterizing a parameter of an ultra thin film, such as a gate oxide layer. A system is disclosed that includes a structure having a pseudo substrate positioned below an ultra thin film, wherein the pseudo substrate includes an optical mirror for enhancing an optical response; and a system for characterizing the ultra thin film by applying a light source to the ultra thin film and analyzing the optical response.

Abstract: Methods, apparatuses and systems for monitoring a stage alignment in a processing system are disclosed. A method for monitoring a stage alignment in a processing system may include providing a calibration target on a surface of the stage; measuring an angle of incident of a light beam to the calibration target; and monitoring the stage alignment based on the determined angle of incidence.

Abstract: A method, system and computer program product for determining an angle of incidence of a light beam illuminating a workpiece positioned on a stage are disclosed. A method for determining an angle of incidence of a light beam illuminating a workpiece positioned on a stage may include: positioning a calibration target on the stage with multiple different tilts; first determining an angle of incident of the light beam with respect to the calibration target with each tilt using a detector; mapping a response of the detector to a determined angle of incidence; and second determining the angle of incidence with respect to the workpiece based on a result of the mapping.

Abstract: A method, system and computer program product for determining a signal quality of an optical metrology tool are disclosed. A method comprises: collecting a data pool regarding measurements of a target made by the optical metrology tool, the data pool including a wavelength of incident light used in a measurement; and statistically analyzing the data pool to obtain a wavelength specific signal quality of the optical metrology tool.

Abstract: A sample stage for performing measurements using an optical metrology system includes at least one sample section for retention of a sample, and components for controlling orientation of the sample section with relation to the optical metrology system. A method and a computer program product are provided.

Abstract: A method, system and computer program product for determining a geometric parameter of an optical spot of a light beam are disclosed. A method comprises: providing a calibration target, the calibration target including a systematic variation in a parameter; measuring the calibration target with respect to the systematic variation using the light beam to obtain a plurality of measurements; and analyzing the measurements and the systematic variation to determine the geometric parameter of the optical spot.