Patents by Inventor Shai Winter
Shai Winter has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9153329Abstract: A method for data storage includes defining, in a memory that includes multiple analog memory cells, an erased state, a set of non-erased programming states and a partial subset of the non-erased programming states. Data is initially stored in a first group of the analog memory cells by programming each of at least some of the memory cells in the first group from the erased state to a respective non-erased programming state selected from the set of non-erased programming states. After initially storing the data, a second group of the analog memory cells, which potentially cause interference to the first group, is programmed. After programming the second group, the first group is selectively re-programmed with the data by repeating programming of only the memory cells in the first group whose respective programming states belong to the partial subset.Type: GrantFiled: July 21, 2014Date of Patent: October 6, 2015Assignee: Apple Inc.Inventors: Naftali Sommer, Uri Perlmutter, Shai Winter
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Publication number: 20140340965Abstract: A method for data storage includes defining, in a memory that includes multiple analog memory cells, an erased state, a set of non-erased programming states and a partial subset of the non-erased programming states. Data is initially stored in a first group of the analog memory cells by programming each of at least some of the memory cells in the first group from the erased state to a respective non-erased programming state selected from the set of non-erased programming states. After initially storing the data, a second group of the analog memory cells, which potentially cause interference to the first group, is programmed. After programming the second group, the first group is selectively re-programmed with the data by repeating programming of only the memory cells in the first group whose respective programming states belong to the partial subset.Type: ApplicationFiled: July 21, 2014Publication date: November 20, 2014Inventors: Naftali Sommer, Uri Perlmutter, Shai Winter
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Patent number: 8787080Abstract: A method for data storage includes defining, in a memory that includes multiple analog memory cells, an erased state, a set of non-erased programming states and a partial subset of the non-erased programming states. Data is initially stored in a first group of the analog memory cells by programming each of at least some of the memory cells in the first group from the erased state to a respective non-erased programming state selected from the set of non-erased programming states. After initially storing the data, a second group of the analog memory cells, which potentially cause interference to the first group, is programmed. After programming the second group, the first group is selectively re-programmed with the data by repeating programming of only the memory cells in the first group whose respective programming states belong to the partial subset.Type: GrantFiled: July 2, 2012Date of Patent: July 22, 2014Assignee: Apple Inc.Inventors: Naftali Sommer, Uri Perlmutter, Shai Winter
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Patent number: 8713330Abstract: A method for data storage includes scrambling data for storage in a memory device using a given scrambling seed. A statistical distribution of the scrambled data is assessed, and a measure of randomness of the statistical distribution is computed. A scrambling configuration of the data is modified responsively to the measure of randomness, and the data having the modified scrambling configuration is stored in the memory device.Type: GrantFiled: October 28, 2009Date of Patent: April 29, 2014Assignee: Apple Inc.Inventors: Naftali Sommer, Micha Anholt, Oren Golov, Uri Perlmutter, Shai Winter
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Patent number: 8670274Abstract: A method for data storage includes storing data in a target analog memory cell, which is one of a group of analog memory cells that are connected in series with one another, by writing a storage value into the target memory cell. The storage value written into the target memory cell is verified while biasing the other memory cells in the group with respective first pass voltages. After writing and verifying the storage value, the storage value is read from the target memory cell while biasing the other memory cells in the group with respective second pass voltages, wherein at least one of the second pass voltages applied to one of the other memory cells in the group is lower than a respective first pass voltage applied to the one of the other memory cells. The data is reconstructed responsively to the read storage value.Type: GrantFiled: July 16, 2013Date of Patent: March 11, 2014Assignee: Apple Inc.Inventors: Shai Winter, Ofir Shalvi
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Patent number: 8599592Abstract: A method for data storage in a memory that includes multiple analog memory cells fabricated using respective physical media, includes identifying a group of the memory cells whose physical media have deteriorated over time below a given storage quality level. A rejuvenation process, which causes the physical media of the memory cells in the group to meet the given storage quality level, is applied to the identified group. Data is stored in the rejuvenated group of the memory cells.Type: GrantFiled: July 23, 2012Date of Patent: December 3, 2013Assignee: Apple Inc.Inventors: Barak Rotbard, Naftali Sommer, Shai Winter, Ofir Shalvi, Dotan Sokolov, Or Ordentlich, Micha Anholt
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Publication number: 20130301360Abstract: A method for data storage includes storing data in a target analog memory cell, which is one of a group of analog memory cells that are connected in series with one another, by writing a storage value into the target memory cell. The storage value written into the target memory cell is verified while biasing the other memory cells in the group with respective first pass voltages. After writing and verifying the storage value, the storage value is read from the target memory cell while biasing the other memory cells in the group with respective second pass voltages, wherein at least one of the second pass voltages applied to one of the other memory cells in the group is lower than a respective first pass voltage applied to the one of the other memory cells. The data is reconstructed responsively to the read storage value.Type: ApplicationFiled: July 16, 2013Publication date: November 14, 2013Inventors: Shai Winter, Ofir Shalvi
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Patent number: 8578243Abstract: A method for data storage includes defining a set of scrambling sequences, each sequence including bits in respective bit positions having bit values, such that a distribution of the bit values in any give bit position satisfies a predefined statistical criterion. Each data word is scrambled using a respective scrambling sequence selected from the set. The scrambled data words are stored in the memory device.Type: GrantFiled: August 2, 2012Date of Patent: November 5, 2013Assignee: Apple Inc.Inventors: Naftali Sommer, Micha Anholt, Oren Golov, Uri Perlmutter, Shai Winter
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Patent number: 8527819Abstract: A method for data storage includes performing an erasure operation on a group of analog memory cells (32). One or more of the memory cells in the group, which failed the erasure operation, are identified as erase-failed cells. A storage configuration that is used for programming the analog memory cells in the group is modified responsively to the identified erase-failed cells. Data is stored in the group of the analog memory cells using the modified storage configuration.Type: GrantFiled: October 12, 2008Date of Patent: September 3, 2013Assignee: Apple Inc.Inventors: Ofir Shalvi, Shai Winter, Naftali Sommer, Dotan Sokolov
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Patent number: 8498151Abstract: A method for data storage includes storing data in a target analog memory cell, which is one of a group of analog memory cells that are connected in series with one another, by writing a storage value into the target memory cell. The storage value written into the target memory cell is verified while biasing the other memory cells in the group with respective first pass voltages. After writing and verifying the storage value, the storage value is read from the target memory cell while biasing the other memory cells in the group with respective second pass voltages, wherein at least one of the second pass voltages applied to one of the other memory cells in the group is lower than a respective first pass voltage applied to the one of the other memory cells. The data is reconstructed responsively to the read storage value.Type: GrantFiled: August 4, 2009Date of Patent: July 30, 2013Assignee: Apple Inc.Inventors: Shai Winter, Ofir Shalvi
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Patent number: 8482978Abstract: A method for data storage includes storing data in a group of analog memory cells by writing into the memory cells in the group respective storage values, which program each of the analog memory cells to a respective programming state selected from a predefined set of programming states, including at least first and second programming states, which are applied respectively to first and second subsets of the memory cells, whereby the storage values held in the memory cells in the first and second subsets are distributed in accordance with respective first and second distributions. A first median of the first distribution is estimated, and a read threshold, which differentiates between the first and second programming states, is calculated based on the estimated first median. The data is retrieved from the analog memory cells in the group by reading the storage values using the calculated read threshold.Type: GrantFiled: June 28, 2011Date of Patent: July 9, 2013Assignee: Apple Inc.Inventors: Uri Perlmutter, Shai Winter, Eyal Gurgi, Oren Golov, Micha Anholt
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Patent number: 8374014Abstract: A method for data storage in a memory that includes multiple analog memory cells fabricated using respective physical media, includes identifying a group of the memory cells whose physical media have deteriorated over time below a given storage quality level. A rejuvenation process, which causes the physical media of the memory cells in the group to meet the given storage quality level, is applied to the identified group. Data is stored in the rejuvenated group of the memory cells.Type: GrantFiled: October 30, 2011Date of Patent: February 12, 2013Assignee: Apple Inc.Inventors: Barak Rotbard, Naftali Sommer, Shai Winter, Ofir Shalvi, Dotan Sokolov, Or Ordentlich, Micha Anholt
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Publication number: 20120297271Abstract: A method for data storage includes defining a set of scrambling sequences, each sequence including bits in respective bit positions having bit values, such that a distribution of the bit values in any give bit position satisfies a predefined statistical criterion. Each data word is scrambled using a respective scrambling sequence selected from the set. The scrambled data words are stored in the memory device.Type: ApplicationFiled: August 2, 2012Publication date: November 22, 2012Inventors: Naftali Sommer, Micha Anholt, Oren Golov, Uri Perlmutter, Shai Winter
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Publication number: 20120287692Abstract: A method for data storage in a memory that includes multiple analog memory cells fabricated using respective physical media, includes identifying a group of the memory cells whose physical media have deteriorated over time below a given storage quality level. A rejuvenation process, which causes the physical media of the memory cells in the group to meet the given storage quality level, is applied to the identified group. Data is stored in the rejuvenated group of the memory cells.Type: ApplicationFiled: July 23, 2012Publication date: November 15, 2012Inventors: Barak Rotbard, Naftali Sommer, Shai Winter, Ofir Shalvi, Dotan Sokolov, Or Ordentlich, Micha Anholt
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Publication number: 20120268990Abstract: A method for data storage includes defining, in a memory that includes multiple analog memory cells, an erased state, a set of non-erased programming states and a partial subset of the non-erased programming states. Data is initially stored in a first group of the analog memory cells by programming each of at least some of the memory cells in the first group from the erased state to a respective non-erased programming state selected from the set of non-erased programming states. After initially storing the data, a second group of the analog memory cells, which potentially cause interference to the first group, is programmed. After programming the second group, the first group is selectively re-programmed with the data by repeating programming of only the memory cells in the first group whose respective programming states belong to the partial subset.Type: ApplicationFiled: July 2, 2012Publication date: October 25, 2012Inventors: Naftali Sommer, Uri Perlmutter, Shai Winter
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Patent number: 8261159Abstract: A method for data storage includes defining a set of scrambling sequences, each sequence including bits in respective bit positions having bit values, such that a distribution of the bit values in any give bit position satisfies a predefined statistical criterion. Each data word is scrambled using a respective scrambling sequence selected from the set. The scrambled data words are stored in the memory device.Type: GrantFiled: October 28, 2009Date of Patent: September 4, 2012Assignee: Apple, Inc.Inventors: Naftali Sommer, Micha Anholt, Oren Golov, Uri Perlmutter, Shai Winter, Gil Semo
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Patent number: 8248831Abstract: A method for data storage in a memory that includes multiple analog memory cells fabricated using respective physical media, includes identifying a group of the memory cells whose physical media have deteriorated over time below a given storage quality level. A rejuvenation process, which causes the physical media of the memory cells in the group to meet the given storage quality level, is applied to the identified group. Data is stored in the rejuvenated group of the memory cells.Type: GrantFiled: December 30, 2009Date of Patent: August 21, 2012Assignee: Apple Inc.Inventors: Barak Rotbard, Naftali Sommer, Shai Winter, Ofir Shalvi, Dotan Sokolov, Or Ordentlich, Micha Anholt
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Patent number: 8238157Abstract: A method for data storage includes defining, in a memory that includes multiple analog memory cells, an erased state, a set of non-erased programming states and a partial subset of the non-erased programming states. Data is initially stored in a first group of the analog memory cells by programming each of at least some of the memory cells in the first group from the erased state to a respective non-erased programming state selected from the set of non-erased programming states. After initially storing the data, a second group of the analog memory cells, which potentially cause interference to the first group, is programmed. After programming the second group, the first group is selectively re-programmed with the data by repeating programming of only the memory cells in the first group whose respective programming states belong to the partial subset.Type: GrantFiled: April 11, 2010Date of Patent: August 7, 2012Assignee: Apple Inc.Inventors: Naftali Sommer, Uri Perlmutter, Shai Winter
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Publication number: 20120044762Abstract: A method for data storage in a memory that includes multiple analog memory cells fabricated using respective physical media, includes identifying a group of the memory cells whose physical media have deteriorated over time below a given storage quality level. A rejuvenation process, which causes the physical media of the memory cells in the group to meet the given storage quality level, is applied to the identified group. Data is stored in the rejuvenated group of the memory cells.Type: ApplicationFiled: October 30, 2011Publication date: February 23, 2012Applicant: ANOBIT TECHNOLOGIES LTDInventors: Barak Rotbard, Naftali Sommer, Shai Winter, Ofir Shalvi, Dotan Sokolov, Or Ordentlich, Micha Anholt
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Patent number: 8085586Abstract: A method for operating a memory includes applying at least one pulse to a group of analog memory cells, so as to cause the memory cells in the group to assume respective storage values. After applying the pulse, the respective storage values are read from the memory cells in the group. One or more statistical properties of the read storage values are computed. A wear level of the group of the memory cells is estimated responsively to the statistical properties.Type: GrantFiled: December 25, 2008Date of Patent: December 27, 2011Assignee: Anobit Technologies Ltd.Inventors: Oren Golov, Eyal Gurgi, Dotan Sokolov, Yoav Kasoria, Shai Winter