Abstract: A semiconductor die includes a transformer with terminals of a first winding electrically coupled to external die terminals of the semiconductor die. The terminals of a second winding of the transformer are coupled to internal circuitry of the semiconductor die. An ESD clamp circuit is electrically coupled to the center tap of the second winding of the transformer. When made conductive during and ESD event, the ESD clamp circuit discharges ESD current between the center tap and a supply rail.

Abstract: A semiconductor die includes a transformer with terminals of a first winding electrically coupled to external die terminals of the semiconductor die. The terminals of a second winding of the transformer are coupled to internal circuitry of the semiconductor die. An ESD clamp circuit is electrically coupled to the center tap of the second winding of the transformer. When made conductive during and ESD event, the ESD clamp circuit discharges ESD current between the center tap and a supply rail.

Abstract: A two-stage, passive, RC polyphase filter for mm-wave quadrature LO generation is presented. The filter features an innovative, symmetrical layout structure, which is more robust to parasitics than the conventional layout. Layout parasitics which become important at mm-wave frequencies are identified and a compensated. Impedance variations and transfer functions are evaluated considering these dominant parasitics. More than 15 dB improvement in image rejection ratio is achieved in comparison with conventional layouts. Using the inventive techniques more than 35 dB of image rejection ratio over a bandwidth of 6 GHz is demonstrated in an outphasing transmitter at 60 GHz in 40 nm CMOS.

Abstract: A two-stage, passive, RC polyphase filter for mm-wave quadrature LO generation is presented. The filter features an innovative, symmetrical layout structure, which is more robust to parasitics than the conventional layout. Layout parasitics which become important at mm-wave frequencies are identified and a compensated. Impedance variations and transfer functions are evaluated considering these dominant parasitics. More than 15 dB improvement in image rejection ratio is achieved in comparison with conventional layouts. Using the inventive techniques more than 35 dB of image rejection ratio over a bandwidth of 6 GHz is demonstrated in an outphasing transmitter at 60 GHz in 40 nm CMOS.

Abstract: A two-stage, passive, RC polyphase filter for mm-wave quadrature LO generation is presented. The filter features an innovative, symmetrical layout structure, which is more robust to parasitics than the conventional layout. Layout parasitics which become important at mm-wave frequencies are identified and a compensated. Impedance variations and transfer functions are evaluated considering these dominant parasitics. More than 15 dB improvement in image rejection ratio is achieved in comparison with conventional layouts. Using the inventive techniques more than 35 dB of image rejection ratio over a bandwidth of 6 GHz is demonstrated in an outphasing transmitter at 60 GHz in 40 nm CMOS.

Abstract: A two-stage, passive, RC polyphase filter for mm-wave quadrature LO generation is presented. The filter features an innovative, symmetrical layout structure, which is more robust to parasitics than the conventional layout. Layout parasitics which become important at mm-wave frequencies are identified and a compensated. Impedance variations and transfer functions are evaluated considering these dominant parasitics. More than 15 dB improvement in image rejection ratio is achieved in comparison with conventional layouts. Using the inventive techniques more than 35 dB of image rejection ratio over a bandwidth of 6 GHz is demonstrated in an outphasing transmitter at 60 GHz in 40 nm CMOS.

Abstract: A porous ?-tricalcium phosphate material for bone implantation is provided. The multiple pores in the porous TCP body are separate discrete voids and are not interconnected. The pore size diameter is in the range of 20-500 ?m, preferably 50-125 ?m. The porous ?-TCP material provides a carrier matrix for bioactive agents and can form a moldable putty composition upon the addition of a binder. Preferably, the bioactive agent is encapsulated in a biodegradable agent. The invention provides a kit and an implant device comprising the porous ?-TCP, and a bioactive agent and a binder. The invention also provides an implantable prosthetic device comprising a prosthetic implant having a surface region, a porous ?-TCP material disposed on the surface region and optionally comprising at least a bioactive agent or a binder. Methods of producing the porous ?-TCP material and inducing bone formation are also provided.

Abstract: A porous ?-tricalcium phosphate material for bone implantation is provided. The multiple pores in the porous TCP body are separate discrete voids and are not interconnected. The pore size diameter is in the range of 20-500 ?m, preferably 50-125 ?m. The porous ?-TCP material provides a carrier matrix for bioactive agents and can form a moldable putty composition upon the addition of a binder. Preferably, the bioactive agent is encapsulated in a biodegradable agent. The invention provides a kit and an implant device comprising the porous ?-TCP, and a bioactive agent and a binder. The invention also provides an implantable prosthetic device comprising a prosthetic implant having a surface region, a porous ?-TCP material disposed on the surface region and optionally comprising at least a bioactive agent or a binder. Methods of producing the porous ?-TCP material and inducing bone formation are also provided.

Abstract: The method is used to fabricate pure copper sputter targets. It includes first heating a copper billet to a temperature of at least 500° C. The copper billet has a purity of at least 99.99 percent. Then warm working the copper billet applies at least 40 percent strain. Cold rolling the warm worked copper billet then applies at least 40 percent strain and forms a copper plate. Finally, annealing the copper plate at a temperature above about 250° C. forms a target blank. The target blank has equiaxed grains having an average grain size of less than 40 &mgr;m. The grains of the target blank have (111), (200), (220) and (311) orientations with the amount of the grains having each of the orientations being less than 50 percent.

Abstract: The method is used to fabricate pure copper sputter targets. It includes first heating a copper billet to a temperature of at least 500° C. The copper billet has a purity of at least 99.99 percent. Then warm working the copper billet applies at least 40 percent strain. Cold rolling the warm worked copper billet then applies at least 40 percent strain and forms a copper plate. Finally, annealing the copper plate at a temperature above about 250° C. forms a target blank. The target blank has equiaxed grains having an average grain size of less than 40 &mgr;m. The grains of the target blank have (111), (200), (220) and (311) orientations with the amount of the grains having each of the orientations being less than 50 percent.

Abstract: A method is provided for forming clad hollow cathode magnetron sputter targets that are lighter in weight and/or less expensive than monolithic targets. A plate of sputter target material is bonded to a sheet of cladding material that is lighter in weight and/or less expensive than the sputter target material. This clad target assembly is then formed into a hollow cathode magnetron sputter target, such as by deep drawing. The clad hollow cathode magnetron further provides greater percent utilization of sputter target material than monolithic targets.

Abstract: There is provided a method of forming a high strength atomic bond between a sputter target and backing plate such that the microstructural characteristics of the sputter target material obtained by prior processing is not altered by the bonding process. There is further provided a method for bonding the target to the backing plate and forming a bonded target/backing plate assembly having a greater target thickness for increased sputtering life, while maintaining the overall standard dimensions set by industry standards.